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1. 发明授权

US09059808B2 Microprocessor chip, data center, and computing system 有权
标题翻译：微处理器芯片，数据中心和计算系统
公开(公告)号：US09059808B2
公开(公告)日：2015-06-16
申请号：US13611839
申请日：2012-09-12
申请人： Ho-jung Kim , Young-soo Park
发明人： Ho-jung Kim , Young-soo Park
IPC分类号： H04B10/00 , H04B10/80
CPC分类号： H04B10/801
摘要： A microprocessor chip includes a plurality of processors; at least one first optical input/output unit configured to receive optical signals from an external device and transmit optical signals to the external device; and an optical system bus that is connected between the plurality of processors and the at least one first optical input/output unit.
摘要翻译：微处理器芯片包括多个处理器; 至少一个第一光输入/输出单元，被配置为从外部设备接收光信号并将光信号传输到所述外部设备; 以及连接在所述多个处理器与所述至少一个第一光学输入/输出单元之间的光学系统总线。

2. 发明申请

US20150028278A1 NONVOLATILE MEMORY TRANSISTOR AND DEVICE INCLUDING THE SAME 有权
标题翻译：非易失性存储器晶体管和包括其的器件
公开(公告)号：US20150028278A1
公开(公告)日：2015-01-29
申请号：US14444083
申请日：2014-07-28
申请人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
发明人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
IPC分类号： H01L45/00
CPC分类号： H01L29/788 , G06N3/049 , G06N3/063 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C14/0063 , G11C16/0433 , G11C2213/15 , G11C2213/53 , H01L27/11521 , H01L28/00 , H01L29/408 , H01L29/42324 , H01L29/51 , H01L29/512 , H01L29/517 , H01L29/685 , H01L29/78 , H01L45/085 , H01L45/1206 , H01L45/147
摘要： Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.
摘要翻译：提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极以及相对于沟道元件彼此分离的漏极。根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。阈值电压根据离子物质的运动而变化。非易失性存储晶体管具有多电平特性。

3. 发明授权

US09337381B2 Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure 有权
标题翻译：半导体缓冲结构，包括半导体缓冲结构的半导体器件，以及使用半导体缓冲结构制造半导体器件的方法
公开(公告)号：US09337381B2
公开(公告)日：2016-05-10
申请号：US14484456
申请日：2014-09-12
申请人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
发明人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
IPC分类号： H01L21/00 , H01L33/00 , H01L33/12 , H01L21/02 , H01L33/32
CPC分类号： H01L33/0025 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32
摘要： A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
摘要翻译：半导体缓冲结构包括硅衬底，形成在硅衬底上的成核层和形成在成核层上的缓冲层。缓冲层包括由具有均匀组成比的氮化物半导体材料形成的第一层，由与第一层上的成核层相同的材料形成的第二层和由相同组成比的相同材料形成的第三层作为第二层的第一层。

4. 发明授权

US09257599B2 Semiconductor light emitting device including hole injection layer 有权
标题翻译：半导体发光器件包括空穴注入层
公开(公告)号：US09257599B2
公开(公告)日：2016-02-09
申请号：US14288824
申请日：2014-05-28
申请人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
发明人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
IPC分类号： H01L21/00 , H01L29/06 , H01L33/00 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/12
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01L33/14 , H01L33/32
摘要： According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
摘要翻译：根据示例性实施例，半导体发光器件包括第一半导体层，第一半导体层上的凹坑放大层，凹坑放大层上的有源层，空穴注入层和空穴注入层上的第二半导体层。第一半导体层掺杂有第一导电类型。凹坑扩大层的上表面和活性层的侧表面限定了在位错上具有倾斜表面的凹坑。凹坑是反锥形空间。空穴注入层位于有源层的顶表面和凹坑的倾斜表面上。第二半导体层掺杂与第一导电类型不同的第二导电类型。

5. 发明授权

US08928017B2 Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same 有权
标题翻译：具有不均匀发射图案层的半导体发光器件及其制造方法
公开(公告)号：US08928017B2
公开(公告)日：2015-01-06
申请号：US12929149
申请日：2011-01-04
申请人： Su-hee Chae , Young-soo Park , Bok-ki Min , Jun-youn Kim , Hyun-gi Hong
发明人： Su-hee Chae , Young-soo Park , Bok-ki Min , Jun-youn Kim , Hyun-gi Hong
IPC分类号： H01L33/00 , H01L33/38 , H01L33/22 , H01L33/40
CPC分类号： H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
摘要： Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
摘要翻译：示例性实施例涉及发光器件（LED）及其制造方法。 LED包括第一半导体层; 第二半导体层; 形成在所述第一和第二半导体层之间的有源层; 以及在所述第一半导体层上包括多层的发光图案层，所述发光图案包括用于从所述有源层产生的外部发射光的发射图案。

6. 发明授权

US08253134B2 Oxide thin film transistor 有权
标题翻译：氧化物薄膜晶体管
公开(公告)号：US08253134B2
公开(公告)日：2012-08-28
申请号：US12076486
申请日：2008-03-19
申请人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
发明人： Sun-il Kim , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L29/78696
摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
摘要翻译：提供氧化物薄膜晶体管和制造氧化物TFT的方法。所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。

7. 发明授权

US08188472B2 Thin film transistor, method of manufacturing the same, and flat panel display having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器
公开(公告)号：US08188472B2
公开(公告)日：2012-05-29
申请号：US12007085
申请日：2008-01-07
申请人： Jae-chul Park , Chang-jung Kim , Sun-il Kim , I-hun Song , Young-soo Park
发明人： Jae-chul Park , Chang-jung Kim , Sun-il Kim , I-hun Song , Young-soo Park
IPC分类号： H01L21/786
CPC分类号： H01L29/78618 , H01L29/78621 , H01L29/7869
摘要： A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
摘要翻译：提供薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器。 TFT包括栅极，与栅极接触的栅极绝缘层，与栅极绝缘层接触且与栅极绝缘层面对栅极的沟道层，接触沟道层的端部的源极; 以及与沟道层的另一端接触的漏极，其中，所述沟道层为非晶氧化物半导体层，所述源极和漏极中的每一个为包含氧化物半导体中具有导电杂质的氧化物半导体层的导电氧化物层层。源极和漏极可以进一步包含低电阻金属层。平板显示器的单位像素的驱动电路包括TFT。

8. 再颁专利

USRE43001E1 Wireless communication medium and method for operating the same 有权
标题翻译：无线通信介质及其操作方法
公开(公告)号：USRE43001E1
公开(公告)日：2011-12-06
申请号：US12368589
申请日：2009-02-10
申请人： Ji Man Park , Yong-sung Jeon , Hong-il Ju , Young-soo Park , Sung-ik Jun , Kyo-ill Chung
发明人： Ji Man Park , Yong-sung Jeon , Hong-il Ju , Young-soo Park , Sung-ik Jun , Kyo-ill Chung
IPC分类号： H04B1/16
CPC分类号： G06K19/0723
摘要： A wireless communication medium includes an antenna, an analog signal processor, a digital signal processor, and a central processing unit & logic module. The antenna transmits and receives a signal to and from an external apparatus. The analog signal processor converts an analog signal to a digital signal, and converts a digital signal to an analog signal. The digital signal processor demodulates the digital signal, detects the start and end of data, and generates a first control signal for determining whether data is transmitted to the external apparatus and a second control signal for perceiving the end of data, blocking the reception of data, modulating data, and determining whether modulated data is transmitted to the external apparatus. The central processing unit & logic module processes data received from and transmitted to the external apparatus. Accordingly, an efficiency of processing a RF signal can be improved.
摘要翻译：无线通信介质包括天线，模拟信号处理器，数字信号处理器和中央处理单元和逻辑模块。天线向外部设备发送和接收信号。模拟信号处理器将模拟信号转换为数字信号，并将数字信号转换为模拟信号。数字信号处理器解调数字信号，检测数据的开始和结束，并且产生用于确定数据是否被发送到外部设备的第一控制信号和用于感知数据结束的第二控制信号，阻止数据的接收调制数据，以及确定调制数据是否被发送到外部设备。中央处理单元和逻辑模块处理从外部设备接收和发送的数据。因此，可以提高处理RF信号的效率。

9. 发明申请

US20110239390A1 HAIRBRUSH 有权
标题翻译：发刷
公开(公告)号：US20110239390A1
公开(公告)日：2011-10-06
申请号：US12667125
申请日：2008-06-23
申请人： Young-soo Park
发明人： Young-soo Park
IPC分类号： A46B15/00
CPC分类号： A46B5/00 , A45D20/12 , A46B5/02 , A46B15/0002 , A46B15/0051 , A46B2200/104
摘要： A hairbrush in which air blown from a hair dryer to the rear face side of the hairbrush is smoothly guided to through-holes in the hairbrush to send the air to the front face side. In the hairbrush (1), divergent projections (4a-4g) are formed on a rear face (2a) of a base section (2) and through-holes (8a-8f) are respectively formed in depressions (3a-3f) located between the projections. A cushion member (5) of a brush section (9) is fixed to the front face (2e) side of the base section (2) of the hairbrush (1), and bristles (6) are embedded in the cushion member (5) through which holes (5a) are formed. Air blown from the hair dryer to the rear face (2a) side of the hair brush (1) is guided by the projections (4a-4g) to the depressions (3a-3f) located between the projections and enters the through-holes (8a-8f). The air passed through the through-holes (8a-8f) passes through the holes (5a) in the cushion member (5) and sent to the front face side of the hairbrush (1).
摘要翻译：将从吹风机吹送到发刷的背面侧的空气被顺利地引导到发刷中的通孔中以将空气送到正面侧的发刷。在发刷（1）中，在基部（2）的后表面（2a）上形成有发散突起（4a-4g），并且通孔（8a-8f）分别形成在位于在投影之间。刷子部分（9）的缓冲构件（5）固定到发刷（1）的基部（2）的前表面（2e）侧，刷毛（6）嵌入缓冲构件（5））形成有孔（5a）。从吹风机吹送到毛刷（1）的背面（2a）侧的空气被突起（4a-4g）引导到位于突起之间的凹部（3a-3f），并进入通孔（ 8a-8f）。穿过通孔（8a-8f）的空气穿过缓冲构件（5）中的孔（5a）并被送到发刷（1）的正面侧。

10. 发明授权

US08003419B2 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08003419B2
公开(公告)日：2011-08-23
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译：提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

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