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1. 发明授权

US08241822B2 Halogenated oxime derivatives and the use therof as latent acids 有权
标题翻译：卤代肟衍生物和作为潜伏酸使用
公开(公告)号：US08241822B2
公开(公告)日：2012-08-14
申请号：US12154333
申请日：2008-05-22
申请人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
IPC分类号： C07C317/12 , G03F7/004
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar″1-A1-Y1-A1-Ar″1—; wherein these radicals optionally are substituted; Ar″1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译：式I或II的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 -C 10卤代烷酰基，卤代苯甲酰基; R2是卤素或C1-C10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1例如为亚苯基，亚萘基，亚二苯基，亚杂芳基，氧联二苯基，亚苯基-D-D1-D-亚苯基或-Ar“1-A1-Y1-A1-Ar” 其中这些基团任选被取代; Ar 1是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部被取代; A1是例如直接键，-O - ， - S - 或-NR 6 - ; Y1特别是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - ; D1特别是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。

2. 发明申请

US20090042114A1 Halogenated oxime derivatives and the use therof as latent acids 有权
标题翻译：卤代肟衍生物和作为潜伏酸使用
公开(公告)号：US20090042114A1
公开(公告)日：2009-02-12
申请号：US12154333
申请日：2008-05-22
申请人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
IPC分类号： C07D209/82 , C07C317/12 , G03F7/004 , C07D335/04
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar″1-A1-Y1-A1-Ar″1—; wherein these radicals optionally are substituted; Ar″1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译：式I或II的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 -C 10卤代烷酰基，卤代苯甲酰基; R2是卤素或C1-C10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1例如为亚苯基，亚萘基，亚二苯基，亚杂芳基，氧联二苯基，亚苯基-D-D1-D-phenylene或-Ar''1-A1-Y1-A1-Ar'1,1- 其中这些基团任选被取代; Ar 1是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部被取代; A1是例如直接键，-O - ， - S - 或-NR 6 - ; Y1特别是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - ; D1特别是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。

3. 发明授权

US07399577B2 Halogenated oxime derivatives and the use thereof 有权
标题翻译：卤代肟衍生物及其用途
公开(公告)号：US07399577B2
公开(公告)日：2008-07-15
申请号：US10543429
申请日：2004-02-09
申请人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2- C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Arl is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1—Y1-A1—Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for example a direct bond, —0—, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example —0—, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译：式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A是例如直接键，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。

4. 发明申请

US20060246377A1 Halogenated oxime derivatives and the use thereof as latent acids 有权
标题翻译：卤化肟衍生物及其作为潜伏酸的用途
公开(公告)号：US20060246377A1
公开(公告)日：2006-11-02
申请号：US10543429
申请日：2004-02-09
申请人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Akira Matsumoto , Peter Murer , Tobias Hintermann
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1-Y1-A1-Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for exampfe a direct bond, -0-, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example -0-, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译：式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A，是直接键合的，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。

5. 发明申请

US20050153244A1 Sulfonate derivatives and the use thereof as latent acids 有权
公开(公告)号：US20050153244A1
公开(公告)日：2005-07-14
申请号：US10495710
申请日：2003-01-28
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
IPC分类号： C07C301/00 , C07C309/67 , C07C309/68 , C07C317/04 , C07C317/14 , C07C323/66 , C07C381/00 , C07D209/48 , C07D209/76 , C07D291/00 , C07D333/36 , G02B5/20 , G03F7/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , H01L21/027 , G03C5/00
CPC分类号： G03F7/0037 , B33Y70/00 , C07C323/66 , C07C381/00 , G03F7/001 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758 , Y10S430/114
摘要： Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is —X1-A3-X2—; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a are phenyl or C1-C18alkyl; give high resolution with good resist profile.

6. 发明申请

US20080286693A1 Sulfonate derivatives and the use thereof as latent acids 审中-公开
公开(公告)号：US20080286693A1
公开(公告)日：2008-11-20
申请号：US11999116
申请日：2007-12-04
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
IPC分类号： G03F7/20
CPC分类号： G03F7/0037 , B33Y70/00 , C07C323/66 , C07C381/00 , G03F7/001 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758 , Y10S430/114
摘要： Chemically amplified photoresist compositions comprising,(a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula Ia, Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb or VIa wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1, when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is —X1-A3-X-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a. are phenyl or C1-C18alkyl; give high resolution with good resist profile.

7. 发明授权

US07326511B2 Sulfonate derivatives and the use thereof as latent acids 有权
公开(公告)号：US07326511B2
公开(公告)日：2008-02-05
申请号：US10495710
申请日：2003-01-28
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Peter Murer
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0037 , B33Y70/00 , C07C323/66 , C07C381/00 , G03F7/001 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758 , Y10S430/114
摘要： Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is -X1-A3-X2-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a are phenyl or C1-C18alkyl; give high resolution with good resist profile

8. 发明授权

US07026094B2 Substituted oxime derivatives and the use thereof as latent acids 失效
公开(公告)号：US07026094B2
公开(公告)日：2006-04-11
申请号：US10478963
申请日：2002-05-23
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
IPC分类号： G03C1/494 , G03C1/76
CPC分类号： G03F7/0045 , B33Y70/00 , C07C309/00 , C07D333/36 , G03F7/0007 , G03F7/001 , G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/117 , Y10S430/12 , Y10S430/122
摘要： New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R′6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.

9. 发明申请

US20080085458A1 Oxime Derivatives And Use Thereof As Latent Acids 有权
标题翻译：肟衍生物及其用作潜伏酸
公开(公告)号：US20080085458A1
公开(公告)日：2008-04-10
申请号：US11632687
申请日：2005-07-11
申请人： Hitoshi Yamato , Toshikage Asakura , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Tobias Hintermann
IPC分类号： C07C291/06 , C07D209/56 , G03F1/00
CPC分类号： C07C309/67 , B33Y70/00 , C07C309/65 , C07C309/73 , C07C309/74 , C07C309/75 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/66 , C07D209/86 , C07F9/097 , G03F7/0007 , G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/12
摘要： The invention pertain to novel photoacid generator compounds of the formula I, II or III wherein R1 is for example C1-C18alkylsulfonyl or phenylsulfonyl, phenyl-C1-C3alkylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, all optionally substituted, or R1 is a group X1, X2 and X3 independently of each other are O or S; R′1, is e.g. phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, all optionally substituted; R2 is halogen or C1-C10haloalkyl; X is halogen; Ar1 is for example biphenylyl or fluorenyl, or is substituted naphthyl; Ar′1 is heteroarylene, optionally substituted; R8, R9, R10 and R11 for example are C1-C6alkyl which is unsubstituted or substituted by halogen; or R8, R9 and R10 are phenyl which is unsubstituted or substituted by C1-C4alkyl or halogen; or R10 and R11 together are 1,2-phenylene or C2-C6alkylene which is unsubstituted or substituted by C1-C4alkyl or halogen.
摘要翻译：本发明涉及式I，II或III的新型光酸产生剂化合物，其中R 1是例如C 1 -C 18烷基磺酰基或苯基磺酰基，苯基-C 1 -C 3烷基磺酰基，萘基磺酰基，蒽基磺酰基或菲基磺酰基，全部任意取代，或R 1是基团X， X 1，X 2和X 3 3彼此独立地为O或S; R'1，例如，亚苯基二磺酰基，亚苯基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，全部任选被取代; R 2是卤素或C 1 -C 10卤代烷基; X是卤素; Ar 1是例如联苯基或芴基，或者是取代的萘基; Ar'1'是亚杂芳基，任选被取代; R 8，R 9，R 10和R 11是例如C 1〜N 未取代或被卤素取代的C 1 -C 6烷基; 或R 8，R 9和R 10是未被取代或被C 1 -C 3烷基取代的苯基，烷基或卤素; 或R 10和R 11一起是1,2-亚苯基或C 2 -C 6 -C 6亚烷基，其是未取代或被C 1 -C 4烷基或卤素取代。

10. 发明授权

US07687220B2 Oxime derivatives and use thereof as latent acids 有权
标题翻译：肟衍生物及其用作潜伏酸
公开(公告)号：US07687220B2
公开(公告)日：2010-03-30
申请号：US11632687
申请日：2005-07-11
申请人： Hitoshi Yamato , Toshikage Asakura , Tobias Hintermann
发明人： Hitoshi Yamato , Toshikage Asakura , Tobias Hintermann
IPC分类号： G03F7/028 , C07C259/08
CPC分类号： C07C309/67 , B33Y70/00 , C07C309/65 , C07C309/73 , C07C309/74 , C07C309/75 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/66 , C07D209/86 , C07F9/097 , G03F7/0007 , G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/12
摘要： The invention pertain to novel photoacid generator compounds of the formula I, II or III wherein R1 is for example C1-C18alkylsulfonyl or phenylsulfonyl, phenyl-C1-C3alkylsulfonyl, , naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, all optionally substituted, or R1 is a group X1, X2 and X3 independently of each other are O or S; R′1, is e.g. phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, all optionally substituted; R2 is halogen or C1-C10haloalkyl; X is halogen; Ar1 is for example biphenylyl or fluorenyl, or is substituted naphthyl; Ar′1 is heteroarylene, optionally substituted; R8, R9, R10 and R11 for example are C1-C6alkyl which is unsubstituted or substituted by halogen; or R8, R9 and R10 are phenyl which is unsubstituted or substituted by C1-C4alkyl or halogen; or R10 and R11 together are 1,2-phenylene or C2-C6alkylene which is unsubstituted or substituted by C1-C4alkyl or halogen.
摘要翻译：本发明涉及式I，II或III的新型光致酸产生剂化合物，其中R 1为例如C 1 -C 18烷基磺酰基或苯基磺酰基，苯基-C 1 -C 3烷基磺酰基，萘基磺酰基，蒽磺酰基或菲基磺酰基，均为任选取代的，或者R 1为基团X 1 ，X2和X3彼此独立地为O或S; R'1，例如亚苯基二磺酰基，亚苯基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，全部任选被取代; R2是卤素或C1-C10卤代烷基; X是卤素; Ar1为例如联苯基或芴基，或为取代的萘基; Ar'1是杂亚芳基，任选取代; R8，R9，R10和R11例如是未被取代或被卤素取代的C1-C6烷基; 或R 8，R 9和R 10为未被取代或被C 1 -C 4烷基或卤素取代的苯基; 或R 10和R 11一起是1,2-亚苯基或未被取代或被C 1 -C 4烷基或卤素取代的C 2 -C 6亚烷基。

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