专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07006884B2 Recycling analyzing system, recycling analyzing program, and recycling analyzing method 失效
标题翻译：回收分析系统，回收分析程序和回收分析方法
公开(公告)号：US07006884B2
公开(公告)日：2006-02-28
申请号：US10754551
申请日：2004-01-12
申请人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
发明人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
IPC分类号： G06F19/00
CPC分类号： G06Q10/06
摘要： A recycling analyzing system comprising: a standard operation time memory which stores standard time for disassembling operation of each component beforehand; an operation time memory which stores time for disassembling operation of each component to be disassembled; an operation time counting unit which counts the time for disassembling operation time of each component constituting the item to be recycled, and stores them in the operation time memory; and a difficult operation extracting unit which refers to the standard time stored in the standard operation time memory, and the time for disassembling operation of each component stored in the operation time memory, and extracts disassembling operations which is difficult.
摘要翻译：一种回收分析系统，包括：标准运行时间存储器，其预先存储每个分量的拆卸操作的标准时间; 操作时间存储器，其存储要拆卸的每个组件的操作的时间; 操作时间计数单元，对构成要再循环的项目的每个组件的拆卸操作时间的时间进行计数，并将其存储在操作时间存储器中; 以及参考标准操作时间存储器中存储的标准时间的困难操作提取单元以及存储在操作时间存储器中的每个组件的拆卸操作的时间，并且提取困难的拆卸操作。

2. 发明授权

US07080435B2 Recycling facilitating system, recycling facilitating program, and recycling facilitating method 失效
标题翻译：回收促进系统，回收利用方案和回收利用方法
公开(公告)号：US07080435B2
公开(公告)日：2006-07-25
申请号：US10756424
申请日：2004-01-14
申请人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
发明人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
IPC分类号： B23P19/04 , B21D17/00
CPC分类号： B09B5/00 , Y10T29/49755 , Y10T29/4978
摘要： A recycling facilitating system including an item identification data input unit for inputting item identification data, an item disassembly data memory for storing item disassembly data in correspondence with the item identification data, an item disassembly data retrieval unit for retrieving the item disassembly data, a disassembly diagram constructing unit for constructing the disassembly diagram based on the item disassembly data, and a disassembly diagram output unit for outputting the disassembly diagram; the disassembly diagram constructing unit determines the progress status of an operation step of disassembling the item to be recycled by identifying a component that was removed during the operation step, and, in accordance with the progress status, constructs one of a plurality of disassembly diagrams, which can be constructed from the item disassembly data that was retrieved by the item disassembly data retrieval unit.
摘要翻译：一种回收促进系统，包括用于输入物品识别数据的物品识别数据输入单元，用于与物品识别数据相对应地存储物品拆卸数据的物品分解数据存储器，用于检索物品拆卸数据的物品拆卸数据检索单元，拆卸用于根据物品拆卸数据构造拆卸图的图示构造单元和用于输出拆卸图的拆卸图输出单元; 拆卸图构造单元通过识别在操作步骤中被去除的组件来确定拆卸要再循环的项目的操作步骤的进度状态，并且根据进度状态构建多个拆卸图中的一个，其可以由由项目反汇编数据检索单元检索的项目反汇编数据构成。

3. 发明授权

US07748096B2 Recycling facilitating system, recycling facilitating program, and recycling facilitating method 失效
标题翻译：回收促进系统，回收利用方案和回收利用方法
公开(公告)号：US07748096B2
公开(公告)日：2010-07-06
申请号：US11339656
申请日：2006-01-26
申请人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
发明人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
IPC分类号： B23P19/04 , G06F19/00
CPC分类号： B09B5/00 , Y10T29/49755 , Y10T29/4978
摘要： A recycling facilitating system including an item identification data input unit for inputting item identification data, an item disassembly data memory for storing item disassembly data in correspondence with the item identification data, an item disassembly data retrieval unit for retrieving the item disassembly data, a disassembly diagram constructing unit for constructing the disassembly diagram based on the item disassembly data, and a disassembly diagram output unit for outputting the disassembly diagram; the disassembly diagram constructing unit determines the progress status of an operation step of disassembling the item to be recycled by identifying a component that was removed during the operation step, and, in accordance with the progress status, constructs one of a plurality of disassembly diagrams, which can be constructed from the item disassembly data that was retrieved by the item disassembly data retrieval unit.
摘要翻译：一种回收促进系统，包括用于输入物品识别数据的物品识别数据输入单元，用于与物品识别数据相对应地存储物品拆卸数据的物品分解数据存储器，用于检索物品拆卸数据的物品拆卸数据检索单元，拆卸用于根据物品拆卸数据构造拆卸图的图示构造单元和用于输出拆卸图的拆卸图输出单元; 拆卸图构造单元通过识别在操作步骤中被去除的组件来确定拆卸要再循环的项目的操作步骤的进度状态，并且根据进度状态构建多个拆卸图中的一个，其可以由由项目反汇编数据检索单元检索的项目反汇编数据构成。

4. 发明申请

US20060137163A1 Recycling facilitating system, recycling facilitating program, and recycling facilitating method 失效
公开(公告)号：US20060137163A1
公开(公告)日：2006-06-29
申请号：US11339656
申请日：2006-01-26
申请人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
发明人： Hitoshi Yamakado , Gu Yu , Toru Miyamoto
IPC分类号： H01B15/00
CPC分类号： B09B5/00 , Y10T29/49755 , Y10T29/4978
摘要： A recycling facilitating system including an item identification data input unit for inputting item identification data, an item disassembly data memory for storing item disassembly data in correspondence with the item identification data, an item disassembly data retrieval unit for retrieving the item disassembly data, a disassembly diagram constructing unit for constructing the disassembly diagram based on the item disassembly data, and a disassembly diagram output unit for outputting the disassembly diagram; the disassembly diagram constructing unit determines the progress status of an operation step of disassembling the item to be recycled by identifying a component that was removed during the operation step, and, in accordance with the progress status, constructs one of a plurality of disassembly diagrams, which can be constructed from the item disassembly data that was retrieved by the item disassembly data retrieval unit.

5. 发明授权

US09385009B2 Semiconductor device and method of forming stacked vias within interconnect structure for Fo-WLCSP 有权
标题翻译：用于Fo-WLCSP的互连结构内形成堆叠通孔的半导体器件和方法
公开(公告)号：US09385009B2
公开(公告)日：2016-07-05
申请号：US13243558
申请日：2011-09-23
申请人： Yaojian Lin , Rui Huang , Kang Cheng , Gu Yu
发明人： Yaojian Lin , Rui Huang , Kang Cheng , Gu Yu
IPC分类号： H01L29/41 , H01L21/56 , H01L23/00 , H01L25/10 , H01L23/498 , H01L21/48 , H01L23/538 , H01L23/31
CPC分类号： H01L23/3128 , H01L21/4853 , H01L21/561 , H01L21/568 , H01L23/293 , H01L23/49811 , H01L23/49816 , H01L23/5226 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05009 , H01L2224/0557 , H01L2224/0558 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06181 , H01L2224/12105 , H01L2224/2518 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73259 , H01L2224/73265 , H01L2224/92144 , H01L2224/94 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15192 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/00012 , H01L2224/19 , H01L2224/03 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.
摘要翻译：半导体器件具有安装到载体上的半导体管芯。密封剂沉积在半导体管芯和载体上。载体被移除。在密封剂和半导体管芯上形成第一绝缘层。通过第一绝缘层形成第一通孔以暴露半导体管芯的接触焊盘。第一导电层形成在第一绝缘层上并且形成在第一通孔中，以电连接到半导体管芯的接触焊盘。在第一绝缘层和第一导电层上形成第二绝缘层。通过激光直接消融通过第二绝缘层形成第二通孔，并与第一通孔对准或偏移以暴露第一导电层。第二导电层形成在第二绝缘层上并进入第二通孔中。可以通过密封剂形成导电孔。

6. 发明申请

US20130075924A1 Semiconductor Device and Method of Forming Stacked Vias Within Interconnect Structure for FO-WLCSP 有权
标题翻译：用于FO-WLCSP的互连结构中形成堆叠通孔的半导体器件和方法
公开(公告)号：US20130075924A1
公开(公告)日：2013-03-28
申请号：US13243558
申请日：2011-09-23
申请人： Yaojian Lin , Rui Huang , Kang Chen , Gu Yu
发明人： Yaojian Lin , Rui Huang , Kang Chen , Gu Yu
IPC分类号： H01L21/56 , H01L23/48 , H01L21/60
CPC分类号： H01L23/3128 , H01L21/4853 , H01L21/561 , H01L21/568 , H01L23/293 , H01L23/49811 , H01L23/49816 , H01L23/5226 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05009 , H01L2224/0557 , H01L2224/0558 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06181 , H01L2224/12105 , H01L2224/2518 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73259 , H01L2224/73265 , H01L2224/92144 , H01L2224/94 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15192 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/00012 , H01L2224/19 , H01L2224/03 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.
摘要翻译：半导体器件具有安装到载体上的半导体管芯。密封剂沉积在半导体管芯和载体上。载体被移除。在密封剂和半导体管芯上形成第一绝缘层。通过第一绝缘层形成第一通孔以暴露半导体管芯的接触焊盘。第一导电层形成在第一绝缘层上并且形成在第一通孔中，以电连接到半导体管芯的接触焊盘。在第一绝缘层和第一导电层上形成第二绝缘层。通过激光直接消融通过第二绝缘层形成第二通孔，并与第一通孔对准或偏移以暴露第一导电层。第二导电层形成在第二绝缘层上并进入第二通孔中。可以通过密封剂形成导电孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式