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    • 6. 发明授权
    • Variable capacitor
    • 可变电容器
    • US4408253A
    • 1983-10-04
    • US261739
    • 1981-05-07
    • Atsushi NishinoTadashi SuzukiMasaki IkedaTadashi Ohtani
    • Atsushi NishinoTadashi SuzukiMasaki IkedaTadashi Ohtani
    • H01G5/013H01G5/06
    • H01G5/0138H01G5/06
    • A variable capacitor, wherein at least one of its stator or rotor electrode is made of aluminum alloy or copper alloy and coated with a thin dielectric material layer containing fluorocarbon resin as its principal component by means of baking, is disclosed. The disclosed variable capacitor is particularly suited for a miniaturization of an appliance which adopts this variable capacitor. Careful qualification of the electrode materials, dielectric material, additional dielectric substance, and conditions for performing the baking and layer forming operation prevent the formation of the oxide film over the surface of the electrode material, and thus ensures a firm adherence of the layer to the substrate and a large maximum capacitance of the layer.
    • 一种可变电容器,其中,其定子或转子电极中的至少一个由铝合金或铜合金制成,并且通过烘烤涂覆有以含氟碳树脂为主要成分的薄介电材料层。 所公开的可变电容器特别适用于采用该可变电容器的器具的小型化。 仔细鉴定电极材料,电介质材料,附加电介质,以及进行烘烤和成层操作的条件,防止在电极材料的表面上形成氧化膜,从而确保层的牢固粘附 衬底和该层的大的最大电容。
    • 7. 发明授权
    • Humidity sensor of capacitance change type
    • 电容变化型湿度传感器
    • US4217623A
    • 1980-08-12
    • US912714
    • 1978-06-05
    • Atsushi NishinoAkihiko Yoshida
    • Atsushi NishinoAkihiko Yoshida
    • G01N27/22H01G7/00
    • G01N27/225
    • A device comprising a metal substrate serving as a first electrode, a dielectric oxide film formed by oxidation of a surface region of the substrate and a second electrode layer formed porously on the dielectric oxide film. Microscopically, the second electrode layer is only partially in contact with the dielectric oxide film. Accordingly moisture adsorbed through the second electrode layer covers uncoated regions of the dielectric film surface to a variable extent in dependence on humidity, resulting in a change in the electrostatic capacitance across the electrodes. Preferably the device comprises a semiconducting metal oxide layer as an innermost part of the second electrode layer.
    • 包括用作第一电极的金属基板,通过氧化基板的表面区域形成的电介质氧化物膜和在电介质氧化物膜上形成的第二电极层的装置。 在显微镜下,第二电极层仅部分地与电介质氧化膜接触。 因此,通过第二电极层吸收的水分根据湿度覆盖电介质膜表面的未涂覆区域到可变程度,导致跨过电极的静电电容的变化。 优选地,该器件包括作为第二电极层的最内部的半导体金属氧化物层。