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1. 发明申请

US20060081903A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060081903A1
公开(公告)日：2006-04-20
申请号：US11249265
申请日：2005-10-14
申请人： Tomoki Inoue , Satoshi Aida , Yasushi Takahashi , Hitoshi Kobayashi
发明人： Tomoki Inoue , Satoshi Aida , Yasushi Takahashi , Hitoshi Kobayashi
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L21/76224 , H01L29/42368 , H01L29/51 , H01L29/515 , H01L29/66348 , H01L29/66734 , H01L29/7397
摘要： An n channel type power MOS field effect transistor has silica particles buried in a bottom portion of a trench and a gate electrode buried in another portion of the trench. The gate electrode is in contact with the silica particles. A gap of the silica particles is not filled with the gate electrode.
摘要翻译： n沟道型功率MOS场效应晶体管具有掩埋在沟槽的底部的二氧化硅颗粒和埋在沟槽的另一部分中的栅电极。栅电极与二氧化硅颗粒接触。二氧化硅颗粒的间隙没有被栅电极填充。

2. 发明授权

US07439605B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07439605B2
公开(公告)日：2008-10-21
申请号：US11117331
申请日：2005-04-29
申请人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
发明人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/405 , H01L29/408 , H01L29/66712 , H01L29/7801
摘要： A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second element regions disposed between the first element regions; and isolation regions disposed between the active element cells so as to isolate the active element cells from each other, the isolation regions being filled with a plurality of semi-insulating particles including granular insulators covered by semiconductor films.
摘要翻译：半导体器件包括多个有源元件单元，其包括第一导电类型的第一元件区域和第二导电类型的第二元件区域，第二元件区域设置在第一元件区域之间; 以及设置在有源元件单元之间以隔离有源元件元件的隔离区域，隔离区域填充有多个包含半导体膜覆盖的粒状绝缘体的半绝缘粒子。

3. 发明申请

US20060197151A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060197151A1
公开(公告)日：2006-09-07
申请号：US11117331
申请日：2005-04-29
申请人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
发明人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/405 , H01L29/408 , H01L29/66712 , H01L29/7801
摘要： A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second element regions disposed between the first element regions; and isolation regions disposed between the active element cells so as to isolate the active element cells from each other, the isolation regions being filled with a plurality of semi-insulating particles including granular insulators covered by semiconductor films.
摘要翻译：半导体器件包括多个有源元件单元，其包括第一导电类型的第一元件区域和第二导电类型的第二元件区域，第二元件区域设置在第一元件区域之间; 以及设置在有源元件单元之间以隔离有源元件元件的隔离区域，隔离区域填充有多个包含半导体膜覆盖的粒状绝缘体的半绝缘粒子。

4. 发明申请

US20110101417A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110101417A1
公开(公告)日：2011-05-05
申请号：US13005589
申请日：2011-01-13
申请人： Tsuneo OGURA , Masakazu Yamaguchi , Tomoki Inoue , Hideaki Ninomiya , Koichi Sugiyama
发明人： Tsuneo OGURA , Masakazu Yamaguchi , Tomoki Inoue , Hideaki Ninomiya , Koichi Sugiyama
IPC分类号： H01L29/739
CPC分类号： H01L29/1095 , H01L29/0834 , H01L29/7397
摘要： A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.
摘要翻译：半导体器件包括第一导电类型的第一基极层; 多个第二导电类型的第二基层，设置在所述第一基底层的第一表面的一部分上; 沟槽形成在第二基底层的每一侧上，并且形成为比第二基底层更深; 在所述第二基底层的表面上沿着所述沟槽形成的发射极层; 设置在与第一表面相对的第一基底层的第二表面上的第二导电类型的集电极层; 形成在所述沟槽的内壁上的绝缘膜，所述绝缘膜在所述沟槽的底部比在所述沟槽的侧表面上更厚; 形成在所述沟槽内并与所述第二基极层和所述发射极层通过所述绝缘膜隔离的栅电极; 以及设置在彼此相邻的第二基底层之间的空间部分，空间部分比第二基底层更深，并且与发射极层和第二基底层电隔离。

5. 发明授权

US07781869B2 Semiconductor device having rectifying action 有权
标题翻译：具有整流作用的半导体装置
公开(公告)号：US07781869B2
公开(公告)日：2010-08-24
申请号：US11498793
申请日：2006-08-04
申请人： Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
发明人： Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
IPC分类号： H01L31/075 , H01L27/095
CPC分类号： H01L29/868 , H01L29/0623 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
摘要翻译：一种半导体器件，包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的基底层，连接到第一主表面的第一主电极层，布置在穿过第一主电极的沟槽内的控制区域并且到达基底层内部，并且具有第一导电类型并连接到第二主表面的第二主电极层。

6. 发明授权

US07372089B2 Solid-state image sensing device 有权
标题翻译：固态摄像装置
公开(公告)号：US07372089B2
公开(公告)日：2008-05-13
申请号：US11369734
申请日：2006-03-08
申请人： Tomoki Inoue , Shinji Uya
发明人： Tomoki Inoue , Shinji Uya
IPC分类号： H01L31/062
CPC分类号： H01L27/14893 , H01L27/14647
摘要： A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.
摘要翻译：一种设置在半导体衬底上方的光电转换膜的固态摄像装置，包括：如本文所定义的第一杂质区; 如本文所定义的第二杂质区; 信号电荷读取区域; 和第三杂质区域。

7. 发明申请

US20060267129A1 Semiconductor device having rectifying action 有权
标题翻译：具有整流作用的半导体装置
公开(公告)号：US20060267129A1
公开(公告)日：2006-11-30
申请号：US11498793
申请日：2006-08-04
申请人： Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
发明人： Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
IPC分类号： H01L31/07
CPC分类号： H01L29/868 , H01L29/0623 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
摘要翻译：一种半导体器件，包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的基底层，连接到第一主表面的第一主电极层，布置在穿过第一主电极的沟槽内的控制区域并且到达基底层内部，并且具有第一导电类型并连接到第二主表面的第二主电极层。

8. 发明授权

US07119379B2 Semiconductor device 有权
公开(公告)号：US07119379B2
公开(公告)日：2006-10-10
申请号：US10689608
申请日：2003-10-22
申请人： Hideaki Ninomiya , Tomoki Inoue
发明人： Hideaki Ninomiya , Tomoki Inoue
IPC分类号： H01L29/32 , H01L29/94 , H01L29/768 , H01L23/58
CPC分类号： H01L29/404 , H01L29/0619 , H01L29/0692 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region; and a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region.

9. 发明申请

US20060202308A1 Semiconductor device 有权
公开(公告)号：US20060202308A1
公开(公告)日：2006-09-14
申请号：US11434185
申请日：2006-05-16
申请人： Koichi Sugiyama , Tomoki Inoue , Hideaki Ninomiya , Masakazu Yamaguchi
发明人： Koichi Sugiyama , Tomoki Inoue , Hideaki Ninomiya , Masakazu Yamaguchi
IPC分类号： H01L27/082
CPC分类号： H01L29/7397 , H01L29/4232 , H01L29/42372 , H01L29/7395
摘要： A semiconductor device comprises a first base layer of a first conductive type which has a first surface and a second surface; a second base layer of a second conductive type which is formed on the first surface; first and second gate electrodes which are formed by embedding an electrically conductive material into a plurality of trenches via gate insulating films, the plurality of trenches being formed such that bottoms of the trenches reach the first base layer; source layers of the first conductive type which are formed on a surface area of the second base layer so as to be adjacent to both side walls of the trench provided with the first gate electrode and one side wall of the trench provided with the second gate electrode, respectively; an emitter layer of the second conductive type which is formed on the second surface; emitter electrodes which are formed on the second base layer and the source layers; a collector electrode which is formed on the emitter layer; and first and second terminals which are electrically connected to the first and second gate electrodes, respectively.

10. 发明申请

US20050073030A1 Semiconductor device having rectifying action 失效
标题翻译：具有整流作用的半导体装置
公开(公告)号：US20050073030A1
公开(公告)日：2005-04-07
申请号：US10406386
申请日：2003-04-04
申请人： Tomoki Inoue , Koichi Sugiyama , Hideaiki Ninomiya , Tsuneo Ogura
发明人： Tomoki Inoue , Koichi Sugiyama , Hideaiki Ninomiya , Tsuneo Ogura
IPC分类号： H01L29/872 , H01L29/47 , H01L29/72 , H01L29/78 , H01L29/861 , H01L29/868 , H01L31/075 , H01L31/105 , H01L31/117
CPC分类号： H01L29/868 , H01L29/0623 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
摘要翻译：一种半导体器件，包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的基底层，连接到第一主表面的第一主电极层，布置在穿过第一主电极的沟槽内的控制区域并且到达基底层内部，并且具有第一导电类型并连接到第二主表面的第二主电极层。

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