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1. 发明授权

US06605515B2 Method for manufacturing thin-film capacitor for performing temperature compensation of junction capacitance of semiconductor device 失效
公开(公告)号：US06605515B2
公开(公告)日：2003-08-12
申请号：US10100935
申请日：2002-03-18
申请人： Hitoshi Kitagawa , Makoto Sasaki
发明人： Hitoshi Kitagawa , Makoto Sasaki
IPC分类号： H01L2120
CPC分类号： H01L28/56 , H01L27/0805
摘要： In a method for manufacturing a thin-film capacitor for performing temperature compensation by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric thin-film has a thickness tN, wherein tN={∈0&tgr;t0t/(C/S)}·{1/(&tgr;/&kgr;)}, wherein C/S represents a sheet capacitance, ∈0 represents the dielectric constant of vacuum, &tgr;t0t represents a desired temperature coefficient of capacitance, &tgr; represents the temperature coefficient of capacitance of the second dielectric thin-film, and &kgr; represents the relative dielectric constant of the second dielectric thin-film, a target value of a grain size of the second dielectric thin-film is determined by selecting the grain size satisfying the formula (&tgr;/&kgr;)/(&tgr;g/&kgr;g)>1, wherein &tgr;g represents the temperature coefficient of capacitance of the principal crystal grain, and &kgr;g represents relative dielectric constant of the principal crystal grain, and the second dielectric thin-film is deposited so that the grain size becomes the target value.

2. 发明授权

US06556421B2 Temperature-compensating thin-film capacitor and electronic device 失效
公开(公告)号：US06556421B2
公开(公告)日：2003-04-29
申请号：US10028543
申请日：2001-12-19
申请人： Masahiro Aoki , Makoto Sasaki , Hitoshi Kitagawa , Hirofumi Fukui
发明人： Masahiro Aoki , Makoto Sasaki , Hitoshi Kitagawa , Hirofumi Fukui
IPC分类号： H01G406
CPC分类号： H01G4/18
摘要： A temperature-compensating thin-film capacitor includes a first dielectric thin-film having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50 ppm/° C. or more, and includes a second thin-film capacitor having capacitance-temperature coefficient with an absolute value of 50 ppm/° C. or less, in which the first and the second dielectric thin-films are placed between electrodes. The present thin-film capacitor design significantly reduces variations in capacitance due to manufacturing equipment tolerance. Also, miniaturization, thinning, and lightening of the thin-film capacitor is achieved. In another aspect of the invention, an electronic device having the temperature-compensating thin-film is provided. The temperature stability of the present thin-film capacitor is highly advantageous for incorporation into electronic devices such as a portable electronic device, microwave communication equipment.

3. 发明授权

US06477036B2 Temperature compensating thin-film capacitor 失效
标题翻译：温度补偿薄膜电容器
公开(公告)号：US06477036B2
公开(公告)日：2002-11-05
申请号：US09930862
申请日：2001-08-16
申请人： Hitoshi Kitagawa , Makoto Sasaki
发明人： Hitoshi Kitagawa , Makoto Sasaki
IPC分类号： H01G420
CPC分类号： H01G4/20 , H01L28/40
摘要： The present invention provides a thin-film capacitor which can easily meet requirements of reduction in size, thickness, and weight and which can perform temperature compensation. In addition to the features described above, the present invention provides a thin-film capacitor having a superior Q factor in a high frequency band. The thin-film capacitor of the present invention has at least one first dielectric thin-film and at least one second dielectric thin-film having a dielectric constant different from that of the first dielectric thin-film, wherein these thin-films are provided between a pair of electrodes. In addition, in the present invention, the absolute value of the temperature coefficient of capacitance of the first dielectric thin-film is 50 ppm/° C. or less, and the temperature coefficient of capacitance of the second dielectric thin-film is a negative value and has an absolute value of 500 ppm/° C. or more.
摘要翻译：本发明提供一种能够容易地满足尺寸，厚度，重量的要求的薄膜电容器，能够进行温度补偿。除了上述特征之外，本发明提供了一种在高频带中具有优异Q因子的薄膜电容器。本发明的薄膜电容器具有至少一个第一电介质薄膜和至少一个具有与第一介电薄膜不同的介电常数的第二电介质薄膜，其中这些薄膜位于一对电极。此外，在本发明中，第一电介质薄膜的电容温度系数的绝对值为50ppm /℃以下，第二电介质薄膜的电容温度系数为负值，绝对值为500ppm /℃以上。

4. 发明授权

US06747334B2 Thin-film capacitor device 失效
标题翻译：薄膜电容器件
公开(公告)号：US06747334B2
公开(公告)日：2004-06-08
申请号：US10452246
申请日：2003-05-30
申请人： Hitoshi Kitagawa , Makoto Sasaki
发明人： Hitoshi Kitagawa , Makoto Sasaki
IPC分类号： H01L2900
CPC分类号： H01L28/56 , H01L27/0805
摘要： A thin-film capacitor device for performing temperature compensation is manufactured by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric thin-film has a thickness tN, wherein tN={&egr;0&tgr;t0t/(C/S)}·{1/(&tgr;/&kgr;)}, wherein C/S represents a sheet capacitance, &egr;0 represents the dielectric constant of vacuum, &tgr;t0t represents a desired temperature coefficient of capacitance, &tgr; represents the temperature coefficient of capacitance of the second dielectric thin-film, and &kgr; represents the relative dielectric constant of the second dielectric thin-film, a target value of a grain size of the second dielectric thin-film is determined by selecting the grain size satisfying the formula (&tgr;/&kgr;)/(&tgr;g/&kgr;g)>1, wherein &tgr;g represents the temperature coefficient of capacitance of the principal crystal grain, and &kgr;g represents relative dielectric constant of the principal crystal grain, and the second dielectric thin-film is deposited so that the grain size becomes the target value.
摘要翻译：通过层叠第一电介质薄膜和第二电介质薄膜来制造用于进行温度补偿的薄膜电容器器件，其中第二介电薄膜具有厚度t N，其中tN = {ε0t0Ot/（C / S ）}。{1 /（tau / kappa）}，其中C / S表示薄膜电容，ε表示真空的介电常数，taut表示期望的电容温度系数，τ表示第二电介质的电容温度系数薄膜和κ表示第二电介质薄膜的相对介电常数，通过选择满足公式（tau / kappa）/（τ）的晶粒尺寸来确定第二电介质薄膜的晶粒尺寸的目标值 taug / kappag）> 1，其中taug表示主晶粒的电容温度系数，kappag表示主晶粒的相对介电常数，第二介电薄膜沉积，使得晶粒尺寸成为目标值。

5. 发明授权

US06274886B1 Thin-film-transistor-array substrate and liquid-crystal display device 有权
标题翻译：薄膜晶体管阵列基板和液晶显示装置
公开(公告)号：US06274886B1
公开(公告)日：2001-08-14
申请号：US09385391
申请日：1999-08-30
申请人： Makoto Sasaki , Hitoshi Kitagawa
发明人： Makoto Sasaki , Hitoshi Kitagawa
IPC分类号： H01L2900
CPC分类号： G02F1/136227 , H01L29/78669
摘要： In a thin-film-transistor-array substrate, a plurality of gate wires and a plurality of source wires are provided on the substrate to form a matrix; a pixel is formed on each of a plurality of areas each enclosed by two adjacent ones of the gate wires and two adjacent ones of the source wires; the pixel includes a thin-film-transistor having: a gate electrode formed as a portion of the gate wire; a source electrode formed as a portion of the source wire; and a drain electrode connected to a pixel electrode formed on an insulation layer covering the gate electrode, the gate wire, the source electrode and the source wire through a contact hole formed by boring the insulation layer, and a dummy hole is formed by boring a portion of the insulation film above at least one of the gate electrode, the gate wire, the source electrode and the source wire in close proximity to the contact hole with the dummy hole reaching the gate electrode, the gate wire, the source electrode or the source wire respectively.
摘要翻译：在薄膜晶体管阵列基板中，在基板上设置多条栅极布线和多条源极线，形成矩阵; 在由两个相邻的栅极线和两个相邻的源极线围绕的多个区域中的每一个上形成像素; 像素包括具有：形成为栅极线的一部分的栅电极的薄膜晶体管; 形成为所述源极线的一部分的源电极; 以及漏极，其与形成在覆盖所述栅极电极，所述栅极线，所述源极电极以及所述源极配线的绝缘层上形成的像素电极连接，所述绝缘层通过使所述绝缘层开孔而形成的接触孔而形成，栅极线，源电极和源极线中的至少一个上的绝缘膜的与绝缘孔接近的接触孔的绝缘膜的部分，虚拟孔到达栅电极，栅极线，源电极或源极源线分别。

6. 发明授权

US10750035B2 Electronic device, system, method for processing information, and recording medium 有权
公开(公告)号：US10750035B2
公开(公告)日：2020-08-18
申请号：US16266218
申请日：2019-02-04
申请人： Makoto Sasaki
发明人： Makoto Sasaki
IPC分类号： H04N1/00 , H04N1/44
摘要： An electronic device includes: an operation receiving unit to receive operation from a user; a sensor to sense the user existing in a detection range of the electronic device to output detection information indicating that the user exists in the detection range; and processing circuitry to output content for assisting the user in operating the electronic device, when the processing circuitry has determined that the user exists in the detection range based on the detection information and when an elapsed time in which the operation of the user is not received at the operation receiving unit has exceeded a threshold time.

7. 发明授权

US10129433B2 Charge determining information processing apparatus, charge processing method, and computer-readable recording medium 有权
公开(公告)号：US10129433B2
公开(公告)日：2018-11-13
申请号：US15064723
申请日：2016-03-09
申请人： Takuya Mori , Junki Aoki , Yukinori Ishii , Atsushi Okazato , Fumiyoshi Kittaka , Tomohiro Kuroyanagi , Hiroyuki Sakuyama , Tohru Sasaki , Makoto Sasaki , Koichiro Maemura
发明人： Takuya Mori , Junki Aoki , Yukinori Ishii , Atsushi Okazato , Fumiyoshi Kittaka , Tomohiro Kuroyanagi , Hiroyuki Sakuyama , Tohru Sasaki , Makoto Sasaki , Koichiro Maemura
IPC分类号： H04N1/34 , H04N1/00 , H04N1/32
摘要： An information processing apparatus includes a provider identification information acquiring unit that acquires a piece of provider identification information for each of a plurality of devices that cooperatively execute a plurality of functions, based on device identification information of the device, the piece of provider identification information allowing identification of whether a provider of the device is a predetermined provider as a provider of a cooperating function; a determining unit that determines whether a non predetermined-provider device provided by a provider other than the predetermined provider exists among the devices based on pieces of the provider identification information; a charge processing unit that performs charge processing to profit the predetermined provider when the non predetermined-provider device exists; and a cooperation controlling unit that controls the devices to cooperatively execute the functions based on the cooperating function.

8. 发明授权

US09702034B2 Roll for molten metal plating bath and method for manufacturing the same 有权
公开(公告)号：US09702034B2
公开(公告)日：2017-07-11
申请号：US14001831
申请日：2012-03-12
申请人： Shinichi Koga , Taizo Matsuda , Eisuke Ogawa , Makoto Sasaki
发明人： Shinichi Koga , Taizo Matsuda , Eisuke Ogawa , Makoto Sasaki
IPC分类号： B05C3/132 , C23C2/00 , B05C17/02 , B05C3/12 , B05C1/12 , B05C1/08 , B65G39/09 , B22D11/06 , B65G49/04
CPC分类号： C23C2/003 , B05C1/0808 , B05C1/12 , B05C3/125 , B05C3/132 , B05C17/0247 , B22D11/0651 , B65G39/09 , B65G49/0404 , B65G49/0413
摘要： A roll for a hot-dip metal coating bath has a substantially cylindrical shape. At least an outer peripheral surface of the roll is formed of a ceramic material. A relatively coarse groove is formed on the outer peripheral surface of the roll in a direction crossing the rotation axis. A plurality of relatively fine grooves is formed in the bottom surface of the coarse groove along the longitudinal direction of the coarse groove. In place of the fine grooves extending in the longitudinal direction of the coarse groove, a plurality of rows of fine grooves may be formed along the crosswise direction of the coarse groove.

9. 发明授权

US09294898B2 Communication terminal and warning information obtaining method 有权
标题翻译：通信终端和警告信息获取方法
公开(公告)号：US09294898B2
公开(公告)日：2016-03-22
申请号：US13983075
申请日：2012-08-13
申请人： Hiroki Shikama , Makoto Sasaki , Takeshi Higuchi
发明人： Hiroki Shikama , Makoto Sasaki , Takeshi Higuchi
IPC分类号： H04W4/22 , H04W48/18 , H04W4/02 , H04W76/00 , H04H20/24 , H04H20/26 , H04H20/59 , H04H60/51 , H04H60/85 , H04H20/57 , H04W88/06 , H04M1/725
CPC分类号： H04W4/22 , H04H20/24 , H04H20/26 , H04H20/57 , H04H20/59 , H04H60/51 , H04H60/85 , H04M1/72536 , H04W4/02 , H04W4/90 , H04W48/18 , H04W76/50 , H04W88/06 , Y02D70/1244 , Y02D70/1246 , Y02D70/1262 , Y02D70/1264 , Y02D70/142 , Y02D70/146 , Y02D70/164 , Y02D70/168
摘要： A communication terminal includes: a first receiving unit configured to receive a communication signal in a first communication system; a second receiving unit configured to receive a communication signal in a second communication system; a position information obtaining unit configured to obtain position information of a user; a mode determination unit configured to activate the second receiving unit if the position information obtaining unit obtains position information of the user in a case where the first receiving unit cannot receive a communication signal; and a user interface unit configured to provide the user with warning information extracted from the communication signal received by the second receiving unit.
摘要翻译：通信终端包括：第一接收单元，被配置为在第一通信系统中接收通信信号; 第二接收单元，被配置为在第二通信系统中接收通信信号; 位置信息获取单元，被配置为获得用户的位置信息; 模式确定单元，被配置为如果位置信息获取单元在第一接收单元不能接收通信信号的情况下获得用户的位置信息，则激活第二接收单元; 以及用户接口单元，被配置为向用户提供从由第二接收单元接收的通信信号中提取的警告信息。

10. 发明授权

US09082621B2 Method for manufacturing silicon carbide single crystal, and silicon carbide substrate 有权
标题翻译：制造碳化硅单晶的方法和碳化硅衬底
公开(公告)号：US09082621B2
公开(公告)日：2015-07-14
申请号：US13378493
申请日：2011-02-25
申请人： Taro Nishiguchi , Shin Harada , Makoto Sasaki
发明人： Taro Nishiguchi , Shin Harada , Makoto Sasaki
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , C30B23/02 , C30B23/06 , C30B29/36 , C30B33/06
CPC分类号： H01L21/02631 , C30B23/025 , C30B23/063 , C30B23/066 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02658
摘要： Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.
摘要翻译：由单晶碳化硅制成的第一和第二材料基板中的每一个具有第一和第二后表面，第一和第二侧表面以及第一和第二前表面。第一和第二后表面连接到支撑部分。第一和第二侧表面彼此间隔开，间隙在第一和第二前表面之间具有开口。形成用于封闭开口上的间隙的闭合部分。用于关闭开口的连接部分通过从第一和第二侧表面沉积到闭合部分上而形成。关闭部分被去除。在第一和第二前表面上生长碳化硅单晶。

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