专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06471781B1 Method of depositing titanium nitride thin film and CVD deposition apparatus 有权
公开(公告)号：US06471781B1
公开(公告)日：2002-10-29
申请号：US09343702
申请日：1999-06-30
申请人： Ryoki Tobe , Yasuaki Tanaka , Atsushi Sekiguchi , Hitoshi Jimba , So Won Kim
发明人： Ryoki Tobe , Yasuaki Tanaka , Atsushi Sekiguchi , Hitoshi Jimba , So Won Kim
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/45502 , C23C16/45561 , C23C16/45576 , H01L21/28568
摘要： A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.004-02 g/min, (c) a second flow controller capable of setting a flow rate of a first carrier gas mixed with the TDAAT to any level within a range of 100-1000 sccm, (d) a third flow controller capable of setting a flow rate of an added gas reactable with the TDAAT to any level within a range of 10-100 sccm, (e) a fourth flow controller capable of setting a flow rate of a second carrier gas being mixed with the added gas to any level within a range of 10-500 sccm, (f) a first supply conduit for mixing the TDAAT and the first carrier gas to create a first mixed gas and guiding the resulting first mixed gas into the reaction vessel, (g) a second supply conduit for mixing the added gas and the second carrier gas to create a second mixed gas and guiding the resulting second mixed gas into the reaction vessel, and (h) a shower head which is provided with a plurality of first nozzles connected to the first supply conduit, and a plurality of second nozzles connected to the second supply conduit, and which is configured such that the first and second mixed gases are fed into the reaction vessel through the nozzles.

2. 发明授权

US6080446A Method of depositing titanium nitride thin film and CVD deposition apparatus 失效
标题翻译：沉积氮化钛薄膜和CVD沉积设备的方法
公开(公告)号：US6080446A
公开(公告)日：2000-06-27
申请号：US63274
申请日：1998-04-21
申请人： Ryoki Tobe , Yasuaki Tanaka , Atsushi Sekiguchi , Hitoshi Jimba , So Won Kim
发明人： Ryoki Tobe , Yasuaki Tanaka , Atsushi Sekiguchi , Hitoshi Jimba , So Won Kim
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/45502 , C23C16/45561 , C23C16/45576 , H01L21/28568
摘要： A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.
摘要翻译：在加热到规定温度的基板的表面上的反应容器中制造氮化钛薄膜的方法，包括将四（二烷基氨基）钛（TDAAT）和第一载气混合以产生第一混合气体的步骤; 通过第一组喷嘴将第一混合气体进料到反应容器中; 将与四（二烷基氨基）钛反应的添加气体与第二载气混合以产生第二混合气体; 通过第二组喷嘴将第二混合气体进料到反应容器中; 同时控制TDAAT，添加气体，细丝和第二载气的流速; 以及通过第一混合气体和第二混合气体沉积氮化钛薄膜，同时将反应容器内的压力限制在0.1-15Pa的范围内。

3. 发明授权

US5672385A Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas 失效
标题翻译：氮化钛膜-MOCVD方法结合使用四氮杂烷基氨基钛作为源气体
公开(公告)号：US5672385A
公开(公告)日：1997-09-30
申请号：US611678
申请日：1996-03-06
申请人： Hitoshi Jimba , So Won Kim , Atsushi Sekiguchi
发明人： Hitoshi Jimba , So Won Kim , Atsushi Sekiguchi
IPC分类号： C01B21/076 , C23C16/34 , C30B29/28 , H01L21/285 , H01L21/31 , H01L21/318 , C23C16/18
CPC分类号： C23C16/34
摘要： The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.
摘要翻译：本发明提供一种通过使用四烷基氨基钛，即使在具有高纵横比的孔中沉积具有良好覆盖率的氮化钛薄膜的方法。在该方法中，通过原料气体导入系统将四烷基氨基钛的原料气体引入反应器。当原料气体被供给到由保持器温度控制机构预先加热的基板时，发生预定的热化学反应以沉积由氮化钛组成的薄膜作为主要成分。反应器中的压力由排气系统控制，以便保持在约0.1至15Pa的范围内的预定值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式