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    • 4. 发明授权
    • Current detection structure
    • 电流检测结构
    • US09513317B2
    • 2016-12-06
    • US14600716
    • 2015-01-20
    • Hitachi Metals, Ltd.
    • Ken OkuyamaNaofumi ChiwataKatsuya AkimotoNaoki FutakuchiYukio IkedaKazuhisa Takahashi
    • G01R15/00G01R19/00G01R33/09G01R15/20
    • G01R19/0092G01R15/205G01R15/207G01R33/093
    • A current detection structure includes a busbar to flow a current therethrough, a magnetic detection element to detect a strength of a magnetic field generated by the current flowing through the busbar, and a current detecting portion to determine the current flowing through the busbar based on the magnetic field detected by the magnetic detection element. A through-hole is formed penetrating the busbar such that a current path is formed on both sides of the through-hole. The magnetic detection element is disposed in the through-hole. The current detecting portion determines the current flowing through the busbar based on a strength of a synthetic magnetic field detected by the magnetic detection element. The synthetic magnetic field is produced by combining a magnetic field that is generated by a current flowing through the current path on the both sides of the through-hole.
    • 电流检测结构包括用于流过电流的母线,用于检测由流过母线的电流产生的磁场的强度的磁检测元件,以及电流检测部分,用于基于电流检测部分确定流过母线的电流 由磁检测元件检测的磁场。 穿过母线的通孔形成在通孔的两侧形成电流通路。 磁检测元件设置在通孔中。 电流检测部基于由磁检测元件检测出的合成磁场的强度来确定流经母线的电流。 合成磁场通过将通过流过通孔的电流的电流产生的磁场组合在通孔的两侧而产生。