专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10243140B2 Manufacturing method of magnetoresistive element and vacuum processing apparatus 有权
公开(公告)号：US10243140B2
公开(公告)日：2019-03-26
申请号：US15251595
申请日：2016-08-30
申请人： Hitachi High-Technologies Corporation
发明人： Makoto Satake , Masaki Yamada , Kenetsu Yokogawa
IPC分类号： H01L43/12 , H01J37/32 , H01L27/22 , H01L43/02 , H01L43/08
摘要： The present invention is a manufacturing method for manufacturing a magnetoresistive element, including a first step for oxidizing or reducing a magnetic film constituting the magnetoresistive element and a metal oxidation film constituting the magnetoresistive element, and a second step performed after the first step, wherein in the second step, in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are oxidized, the oxidized magnetic film constituting the magnetoresistive element or the oxidized metal oxidation film constituting the magnetoresistive element is selectively reduced, and in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are reduced, the reduced magnetic film constituting the magnetoresistive element or the reduced metal oxidation film constituting the magnetoresistive element is selectively oxidized.

2. 发明申请

US20150068681A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20150068681A1
公开(公告)日：2015-03-12
申请号：US14181968
申请日：2014-02-17
申请人： Hitachi High-Technologies Corporation
发明人： Tsutomu Tetsuka , Makoto Satake , Tadayoshi Kawaguchi
IPC分类号： H01J37/32 , C23C16/52 , C23C16/507 , C23C16/00
摘要： A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.
摘要翻译：等离子体处理装置包括用于产生等离子体的处理室，构成处理室的壁的一部分的真空窗，包括至少两个用于在处理室中产生等离子体的系统的感应天线，用于施加该等离子体的射频电源独立于各个感应天线的电流，以及包括用于控制各个系统的射频电源的电流的相位的相位电路的控制器或随时间的当前值的控制器以及控制单元。控制器顺序地时间调制流到系统的电流之间的相位差或在样品处理周期内的当前值，以移动等离子体产生位置，以使晶片的离子入射角在晶片平面上均匀。

3. 发明授权

US09097754B2 Method of manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US09097754B2
公开(公告)日：2015-08-04
申请号：US13748665
申请日：2013-01-24
申请人： Hitachi High-Technologies Corporation
发明人： Makoto Satake , Jun Hayakawa , Tsutomu Tetsuka , Takeshi Shimada , Naohiro Yamamoto , Atsushi Yoshida
IPC分类号： B44C1/22 , H01L21/302 , H01L21/461 , G01R33/09 , H01L21/311 , H01J37/32 , H01L43/12 , H01L21/3065 , G11B5/31 , B82Y25/00 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/09 , G11B5/3116 , G11C11/161 , H01F41/307 , H01F41/308 , H01J37/32192 , H01J37/32229 , H01L21/3065 , H01L21/31138 , H01L43/12
摘要： The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.
摘要翻译：本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式