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1. 发明授权

US5367179A Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same 失效
标题翻译：具有由铝制成的电极的薄膜晶体管和使用其的有源矩阵面板
公开(公告)号：US5367179A
公开(公告)日：1994-11-22
申请号：US975282
申请日：1992-11-12
申请人： Hisatoshi Mori , Syunichi Sato , Naohiro Konya , Ichiro Ohno , Hiromitsu Ishii , Kunihiro Matsuda , Junji Shiota
发明人： Hisatoshi Mori , Syunichi Sato , Naohiro Konya , Ichiro Ohno , Hiromitsu Ishii , Kunihiro Matsuda , Junji Shiota
IPC分类号： H01L21/316 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/49 , H01L29/786 , H01L23/48
CPC分类号： H01L21/0217 , H01L21/02274 , H01L21/31612 , H01L21/3185 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78663
摘要： A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.
摘要翻译：薄膜晶体管包括形成在绝缘基板上的栅极电极，覆盖栅极电极和绝缘基板的栅极绝缘膜，形成在栅极绝缘膜上的i型半导体层，以及电极和漏极电极分别连接到i型半导体层的两端。栅电极由含有Ti和Ta等高熔点金属和氧或氮的铝合金构成。

2. 发明授权

US4975168A Method of forming transparent conductive film and apparatus for forming the same 失效
标题翻译：形成透明导电膜的方法及其形成装置
公开(公告)号：US4975168A
公开(公告)日：1990-12-04
申请号：US339474
申请日：1989-04-17
申请人： Ichiro Ohno , Junji Shiota , Hidetaka Uchiumi
发明人： Ichiro Ohno , Junji Shiota , Hidetaka Uchiumi
IPC分类号： C23C14/08 , C23C14/00 , C23C14/34 , C23C14/54 , H01J37/32
CPC分类号： H01J37/3244 , C23C14/0042 , C23C14/547
摘要： A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.
摘要翻译：通过溅射形成透明导电薄膜的方法包括将由导电氧化物材料构成的靶和在其上形成薄膜的基板放置在压力容器中的步骤，提供氩气和氧气的步骤在压力容器基本抽真空之后，向靶提供溅射电流以维持放电状态的步骤，检测压力室中的气体混合物中的氧分压的步骤和控制流量的步骤的氧气。氧气的流量由控制单元控制，使得在分压检测步骤中检测到的氧的分压值总是保持恒定。

3. 发明授权

US5514259A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US5514259A
公开(公告)日：1996-05-07
申请号：US158821
申请日：1993-11-26
申请人： Junji Shiota , Ichiro Ohno , Hidetaka Uchiumi
发明人： Junji Shiota , Ichiro Ohno , Hidetaka Uchiumi
IPC分类号： C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , C23C14/34
CPC分类号： H01J37/3405
摘要： A sputtering apparatus has a pressure resistant vessel, from which gas in discharged and into which gas for sputtering is supplied, a substrate disposed in the vessel to be formed with a film at one surface thereof, a target disposed oppositely to one surface of the substrate to be formed of a substance to become a material of the film, a magnet provided on the surface of the target oppositely to the substrate to generate a magnetic field for confining a plasma in the vicinity of the surface of the target opposed to the substrate, a plate-shaped anode disposed between the substrate and the target to be formed with an opening of the shape in which at least one side is larger than the profile of the substrate at a position opposed to the substrate, and a sputtering current supplier between the anode and the target. The anode is made of a conductor. An opening larger than the profile of the substrate is formed at a position of the anode opposed to the substrate.
摘要翻译：溅射装置具有耐压容器，从其中排出的气体和用于溅射的气体被供应到设置在容器中的基板，以在其一个表面形成膜，与基板的一个表面相对设置的靶由成为该材料的物质形成，与该基板相对地设置在该靶的表面上的磁体，以产生用于将等离子体限制在与该基板相对的靶的表面附近的磁场，设置在所述基板和所述靶材之间的板状阳极，以形成所述形状的开口，其中至少一侧比所述基板的与所述基板相对的位置处的所述基板的轮廓大，以及所述溅射电流供应器阳极和目标。阳极由导体制成。在与基板相对的阳极的位置处形成大于基板的轮廓的开口。

4. 发明申请

US20100144095A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM 审中-公开
标题翻译：制造半导体衬底的半导体器件的表面和半导体衬底的表面覆盖有树脂保护膜的方法
公开(公告)号：US20100144095A1
公开(公告)日：2010-06-10
申请号：US12632006
申请日：2009-12-07
申请人： Taisuke KOROKU , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
发明人： Taisuke KOROKU , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
IPC分类号： H01L21/50
CPC分类号： H01L21/6836 , H01L21/568 , H01L21/78 , H01L23/3114 , H01L23/3135 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/94 , H01L2221/6834 , H01L2224/0401 , H01L2224/16 , H01L2224/18 , H01L2224/94 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/3511 , H01L2224/11 , H01L2224/03
摘要： First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.
摘要翻译：首先，形成在半导体晶片的一部分中的沟槽，密封膜等与切割街道及其两侧对应的沟槽。在这种状态下，通过形成沟槽将半导体晶片分离成硅衬底。然后，在包括沟槽的内部的每个硅衬底的底表面上形成树脂保护膜。在这种情况下，将半导体晶片分离成硅基板。然而，支撑板通过粘合剂层固定在柱状电极和密封膜的上表面上。因此，当形成树脂保护膜时，可以防止包含分离的硅衬底的整体容易翘曲。

5. 发明申请

US20100144096A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM 审中-公开
公开(公告)号：US20100144096A1
公开(公告)日：2010-06-10
申请号：US12632033
申请日：2009-12-07
申请人： Taisuke Koroku , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
发明人： Taisuke Koroku , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
IPC分类号： H01L21/60
CPC分类号： H01L21/561 , H01L21/6836 , H01L23/3114 , H01L23/3135 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2924/14 , H01L2924/19041
摘要： First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

6. 发明授权

US4568208A Printer 失效
标题翻译：打印机
公开(公告)号：US4568208A
公开(公告)日：1986-02-04
申请号：US662910
申请日：1984-10-19
申请人： Takayuki Iwase , Junji Shiota , Kazuo Nakamura
发明人： Takayuki Iwase , Junji Shiota , Kazuo Nakamura
IPC分类号： B41J7/92 , B41J7/94 , B41J9/26 , B41J23/02 , B41J23/04 , B41J35/10
CPC分类号： B41J9/26 , B41J7/92 , B41J7/94
摘要： In a printer, a printing clutch and a hammer impact changeover mechanism are controlled through a control member by one electromagnet, in such a manner that in response to a printing signal the clutch is engaged through the control member by the electromagnet to start one printing cycle and, in the second half of the printing cycle, the electromagnet is operated to enable a hammer impact change-over mechanism with the aid of the control member. The energizing forces of two weak spring members are applied to a cam follower member operatively coupled to the printing hammer so that when a printing type element having a large printing surface is selected, the energizing forces of the two spring members are utilized to allow the printing hammer to strike the type element strongly, and when a type element having a small printing surface is selected, the energizing force of only one of the two spring member is utilized to allow the printing hammer to strike the type element less strongly.
摘要翻译：在打印机中，打印离合器和锤击切换机构通过一个电磁体通过控制部件被控制，使得响应于打印信号，离合器通过电磁铁与控制部件接合以开始一个打印周期并且在打印周期的后半部分中，电磁铁被操作以借助控制构件实现锤击冲击转换机构。两个弱弹簧构件的通电力被施加到可操作地联接到打印锤的凸轮随动件，使得当选择具有大的印刷表面的印刷型元件时，两个弹簧构件的通电力被用于允许印刷锤子强烈地冲击型元件，并且当选择具有小打印表面的型元件时，仅使用两个弹簧元件中的一个的激励力来使打印锤不太强烈地撞击型元件。

7. 发明授权

US08564128B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08564128B2
公开(公告)日：2013-10-22
申请号：US13225693
申请日：2011-09-06
申请人： Junji Shiota
发明人： Junji Shiota
IPC分类号： H01L23/48
CPC分类号： H01L24/03 , H01L23/3114 , H01L23/3192 , H01L24/13 , H01L2224/02311 , H01L2224/02331 , H01L2224/0239 , H01L2224/024 , H01L2224/03462 , H01L2224/0362 , H01L2224/0401 , H01L2224/05569 , H01L2224/05644 , H01L2224/05647 , H01L2224/13022 , H01L2224/131 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate having a connection pad, an external connection electrode provided on the semiconductor substrate to be connected to the connection pad, and a sealing film provided to cover the external connection electrode, wherein an opening is provided in the sealing film to expose a center of the upper surface of the external connection electrode, and the sealing film is provided to cover an outer peripheral part of the upper surface of the external connection electrode.
摘要翻译：半导体器件包括具有连接焊盘的半导体衬底，设置在要连接到连接焊盘的半导体衬底上的外部连接电极和设置成覆盖外部连接电极的密封膜，其中在密封膜中设置有开口露出外部连接电极的上表面的中心，并且设置密封膜以覆盖外部连接电极的上表面的外周部分。

8. 发明授权

US07863750B2 Semiconductor device capable of suppressing warping in a wafer state and manufacturing method thereof 有权
标题翻译：能够抑制晶片状态翘曲的半导体装置及其制造方法
公开(公告)号：US07863750B2
公开(公告)日：2011-01-04
申请号：US12507188
申请日：2009-07-22
申请人： Junji Shiota , Taisuke Koroku , Nobumitsu Fujii , Osamu Kuwabara , Osamu Okada
发明人： Junji Shiota , Taisuke Koroku , Nobumitsu Fujii , Osamu Kuwabara , Osamu Okada
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/053 , H01L23/12
CPC分类号： H01L21/78 , H01L21/561 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2224/02331 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/16 , H01L2924/01019 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014
摘要： In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.
摘要翻译：在这种半导体装置的制造方法中，在半导体晶片的整个表面上施加了密封膜并硬化后，在密封膜中形成用于形成侧部保护膜的第二沟槽，并且在顶部表面侧半导体晶片。换句话说，密封膜形成为在半导体晶片的顶面侧未形成导致强度降低的槽的状态。由于在形成密封膜之后在半导体晶片的顶表面侧形成第二凹槽，所以当由液体树脂制成的密封膜硬化时，半导体晶片不太可能翘曲。

9. 发明申请

US20080073785A1 Semiconductor device having sealing film and manufacturing method thereof 审中-公开
标题翻译：具有密封膜的半导体装置及其制造方法
公开(公告)号：US20080073785A1
公开(公告)日：2008-03-27
申请号：US11903677
申请日：2007-09-24
申请人： Junji Shiota
发明人： Junji Shiota
IPC分类号： H01L23/488 , H01L21/44
CPC分类号： H01L23/3114 , H01L21/561 , H01L21/6715 , H01L21/67207 , H01L21/67745 , H01L24/02 , H01L24/11 , H01L24/12 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/014 , H01L2924/14
摘要： A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, Columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.
摘要翻译：半导体器件包括多个布线，它们设置在半导体衬底的上侧，并具有连接焊盘部分，在电线的连接焊盘部分上设置有柱状电极。在半导体衬底的上侧和布线的柱状电极周围设置第一密封膜。在第一密封膜上设置第二密封膜。第一密封膜由不混合填料的树脂制成，第二密封膜由树脂中填充剂混合的材料制成。

10. 发明授权

US06320138B1 Substrate with conductor formed of low-resistance aluminum alloy 失效
标题翻译：导体由低电阻铝合金形成的导体
公开(公告)号：US06320138B1
公开(公告)日：2001-11-20
申请号：US09047693
申请日：1998-03-25
申请人： Kenji Kamiya , Junji Shiota
发明人： Kenji Kamiya , Junji Shiota
IPC分类号： H01R2372
CPC分类号： H01L23/49866 , H01L2924/0002 , H01L2924/00
摘要： A wiring substrate is disclosed, which has optimal characteristics for, for example, an active matrix type liquid crystal display device with a thin film transistor. Wiring formed of an Al-Nd-Ti alloy thin film is formed on a glass substrate, and if necessary, a semiconductor element which is electrically connected to the wiring is formed. In this case, the specific resistance of the Al-Nd-Ti alloy thin film is about 8 &mgr;&OHgr; cm if the Nd concentration is 0.75 at % and the Ti concentration is 0.5 at %. Further, even if the resultant substrate is heated at 240-270 C. after the formation of the wiring, occurrence of a hillock and a pinhole is substantially completely suppressed.
摘要翻译：公开了一种布线基板，其具有例如具有薄膜晶体管的有源矩阵型液晶显示装置的最佳特性。在玻璃基板上形成由Al-Nd-Ti合金薄膜构成的配线，如果需要，形成与布线电连接的半导体元件。在这种情况下，如果Nd浓度为0.75at％，Ti浓度为0.5at％，则Al-Nd-Ti合金薄膜的电阻率为约8μOMEGAcm。此外，即使在形成布线之后将所得基板加热到240-270℃，基本上完全抑制了小丘和针孔的发生。

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