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1. 发明授权

US07364713B2 Raw material powder for molding oxide ion conductor, and method for manufacturing the same 有权
标题翻译：用于模制氧化物离子导体的原料粉末及其制造方法
公开(公告)号：US07364713B2
公开(公告)日：2008-04-29
申请号：US10505120
申请日：2003-02-10
申请人： Hisatomi Taguchi , Atsushi Fukaya , Shigeo Nagaya , Kiyoshi Komura , Kiichi Hirano , Hiroshi Tenjikukatsura
发明人： Hisatomi Taguchi , Atsushi Fukaya , Shigeo Nagaya , Kiyoshi Komura , Kiichi Hirano , Hiroshi Tenjikukatsura
IPC分类号： C01F17/00
CPC分类号： C04B35/2641 , C01B13/0255 , C01G49/0018 , C01G49/009 , C04B35/01 , C04B35/4504 , C04B35/462 , C04B35/47 , C04B35/6262 , C04B35/6268 , C04B35/62685 , C04B2235/3205 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3272 , C04B2235/3274 , C04B2235/3275 , C04B2235/3279 , C04B2235/3286 , C04B2235/768 , C04B2235/96
摘要： It is an object of the present invention to provide a raw material powder for stably obtaining a dense sinter that is prevented from cracking, and a method for manufacturing this powder, and a method for manufacturing a lanthanum-based oxide ion conductor in which this raw material powder is used.The raw material powder manufacturing method of the present invention is a method for manufacturing a raw material powder for forming an oxide ion conductor composed of a multi-component metal oxide including lanthanum or lanthanide, wherein a mixed powder blended such that all of the elements constituting said multi-component metal oxide are included is prefired, after which this prefired powder is exposed to water or moist gas so as to expand at least some of the particles in said powder. Alternatively, two types of mixed powder with different components are prefired separately, after which the prefired powders are blended in a specific ratio.
摘要翻译：本发明的目的是提供一种用于稳定地获得防止裂纹的致密烧结体的原料粉末，以及该粉末的制造方法以及该镧系氧化物离子导体的制造方法，其中，使用材料粉末。本发明的原料粉末的制造方法是一种用于形成由包含镧或镧系元素的多组分金属氧化物构成的氧化物离子传导体的原料粉末的制造方法，其中混合粉末使得构成的所有元素包含的所述多组分金属氧化物被预先烧制，之后将该预制粉末暴露于水或潮湿气体中，以使所述粉末中的至少一些颗粒膨胀。或者，将两种不同组分的混合粉末分别预先烧制，然后将预烧粉末以特定比例混合。

2. 发明申请

US20050124484A1 Raw material powder for forming material capable of conducting oxygen ion and and method for production thereof 有权
标题翻译：用于形成能够导电氧离子的材料的原料粉末及其制造方法
公开(公告)号：US20050124484A1
公开(公告)日：2005-06-09
申请号：US10505120
申请日：2003-02-10
申请人： Hisatomi Taguchi , Atsushi Fukaya , Shigeo Nagaya , Kiyoshi Komura , Kiichi Hirano , Hiroshi Tenjikukatsura
发明人： Hisatomi Taguchi , Atsushi Fukaya , Shigeo Nagaya , Kiyoshi Komura , Kiichi Hirano , Hiroshi Tenjikukatsura
IPC分类号： C04B35/626 , C01B13/02 , C01F17/00 , C01G49/00 , C04B35/00 , C04B35/26 , C04B35/45 , C04B35/462 , C04B35/47 , H01B13/00 , C04B35/50
CPC分类号： C04B35/2641 , C01B13/0255 , C01G49/0018 , C01G49/009 , C04B35/01 , C04B35/4504 , C04B35/462 , C04B35/47 , C04B35/6262 , C04B35/6268 , C04B35/62685 , C04B2235/3205 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3272 , C04B2235/3274 , C04B2235/3275 , C04B2235/3279 , C04B2235/3286 , C04B2235/768 , C04B2235/96
摘要： It is an object of the present invention to provide a raw material powder for stably obtaining a dense sinter that is prevented from cracking, and a method for manufacturing this powder, and a method for manufacturing a lanthanum-based oxide ion conductor in which this raw material powder is used. The raw material powder manufacturing method of the present invention is a method for manufacturing a raw material powder for forming an oxide ion conductor composed of a multi-component metal oxide including lanthanum or lanthanide, wherein a mixed powder blended such that all of the elements constituting said multi-component metal oxide are included is prefired, after which this prefired powder is exposed to water or moist gas so as to expand at least some of the particles in said powder. Alternatively, two types of mixed powder with different components are prefired separately, after which the prefired powders are blended in a specific ratio.
摘要翻译：本发明的目的是提供一种用于稳定地获得防止裂纹的致密烧结体的原料粉末，以及该粉末的制造方法以及该镧系氧化物离子导体的制造方法，其中，使用材料粉末。本发明的原料粉末的制造方法是一种用于形成由包含镧或镧系元素的多组分金属氧化物构成的氧化物离子传导体的原料粉末的制造方法，其中混合粉末使得构成的所有元素包含的所述多组分金属氧化物被预先烧制，之后将该预制粉末暴露于水或潮湿气体中，以使所述粉末中的至少一些颗粒膨胀。或者，将两种不同组分的混合粉末分别预先烧制，然后将预烧粉末以特定比例混合。

3. 发明授权

US07084052B2 Semiconductor device, display device and method of fabricating the same 失效
公开(公告)号：US07084052B2
公开(公告)日：2006-08-01
申请号：US10917394
申请日：2004-08-13
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L21/425
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2022 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

4. 发明授权

US5837568A Manufacturing method of semiconductor devices 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5837568A
公开(公告)日：1998-11-17
申请号：US763556
申请日：1996-12-10
申请人： Kiyoshi Yoneda , Yoshihiro Morimoto , Kiichi Hirano , Koji Suzuki , Masaru Takeuchi
发明人： Kiyoshi Yoneda , Yoshihiro Morimoto , Kiichi Hirano , Koji Suzuki , Masaru Takeuchi
IPC分类号： H01L21/223 , H01L21/336 , H01L29/786 , H01L21/339
CPC分类号： H01L29/66757 , H01L21/2236 , H01L29/78621
摘要： To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.
摘要翻译：提供使用聚硅氧烷并具有LDD结构的薄膜晶体管（TFT）的制造方法。特别地，TFT的LDD部分以改进的方法形成，以便实现TFT的高吞吐量和稳定的性能。具体地说，在包括质谱法的离子注入方法中，以低浓度掺杂LD区域，因为需要剂量的高可控性。另一方面，在不包括质谱法的离子喷淋法中，源极和漏极区域以比LD区域更高的浓度被掺杂。使用离子喷淋法，可以掺杂多晶硅，使得对其造成较少的掺杂损伤。这使得可以施加较低的退火温度，例如RTA，以激活掺杂杂质，以防止基板弯曲。此外，离子注入方法和喷淋方法的组合实现了具有稳定性能的TFT的高产量生产。

5. 发明授权

US06329269B1 Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen 失效
标题翻译：半导体器件制造采用湿式无定形膜凝结法
公开(公告)号：US06329269B1
公开(公告)日：2001-12-11
申请号：US08622842
申请日：1996-03-27
申请人： Hiroki Hamada , Kiichi Hirano , Akifumi Sasaki
发明人： Hiroki Hamada , Kiichi Hirano , Akifumi Sasaki
IPC分类号： H01L2100
CPC分类号： H01L21/02667 , C30B1/023 , C30B29/06 , C30B33/005 , H01L21/02532 , H01L21/2022
摘要： A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成非晶半导体膜，在含有水蒸气和氧气的气氛中氧化非晶半导体膜的表面，并除去形成在该表面上的氧化物膜半导体膜。

6. 发明授权

US6084579A Display apparatus using electroluminescence elements 失效
标题翻译：使用电致发光元件的显示装置
公开(公告)号：US6084579A
公开(公告)日：2000-07-04
申请号：US978262
申请日：1997-11-25
申请人： Kiichi Hirano
发明人： Kiichi Hirano
IPC分类号： H05B33/08 , G09F9/30 , G09G3/32 , H01L51/50 , H05B33/12 , H05B33/26 , G09G5/00 , G09G3/10 , G09G3/30
CPC分类号： G09G3/3216 , G09G3/3225 , G09G2300/0426 , G09G2300/08 , G09G2300/0842 , G09G2300/089 , G09G2320/0233 , G09G2320/0252 , H01L27/3248 , H01L27/3265
摘要： A pixel of an organic electroluminescence (EL) display apparatus includes an EL element and an added capacitor connected in parallel with the EL element. The added capacitor provides improved image quality. To further improve image quality, an added resistor may be connected in series with the EL element, and in parallel with the added capacitor. Alternatively, the added resistor may be connected in series with the added capacitor, and in parallel with the EL element. The pixel may be used in both a simple matrix display system or an active matrix display system.
摘要翻译：有机电致发光（EL）显示装置的像素包括与EL元件并联连接的EL元件和附加电容器。添加的电容器提供了改进的图像质量。为了进一步提高图像质量，可以将附加的电阻器与EL元件串联连接，并与添加的电容器并联。或者，添加的电阻器可以与添加的电容器串联连接，并且与EL元件并联连接。像素可以用于简单矩阵显示系统或有源矩阵显示系统中。

7. 发明授权

US5771110A Thin film transistor device, display device and method of fabricating the same 失效
标题翻译：薄膜晶体管器件，显示器件及其制造方法
公开(公告)号：US5771110A
公开(公告)日：1998-06-23
申请号：US677424
申请日：1996-07-02
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L27/105
CPC分类号： G02F1/13454 , H01L21/2022 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78648 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

8. 发明申请

US20050014316A1 Semiconductor device, display device and method of fabricating the same 失效
标题翻译：半导体装置，显示装置及其制造方法
公开(公告)号：US20050014316A1
公开(公告)日：2005-01-20
申请号：US10917394
申请日：2004-08-13
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L21/30 , H01L21/46 , H01L21/00
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2022 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

9. 发明授权

US06790714B2 Semiconductor device, display device and method of fabricating the same 有权
标题翻译：半导体装置，显示装置及其制造方法
公开(公告)号：US06790714B2
公开(公告)日：2004-09-14
申请号：US09813866
申请日：2001-03-22
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2022 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

10. 发明授权

US5707882A Semiconductor device for display device using thin film transistors and process of manufacturing the same 失效
标题翻译：用于使用薄膜晶体管的显示装置的半导体器件及其制造方法
公开(公告)号：US5707882A
公开(公告)日：1998-01-13
申请号：US376795
申请日：1995-01-23
申请人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
发明人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/84 , H01L21/265
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/12 , G02F1/13454
摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.
摘要翻译：公开了制造具有特定场效应迁移率的多晶硅膜的方法。在透明绝缘基板上形成第一多晶硅膜。硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

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