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    • 1. 发明授权
    • Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same
    • 有源矩阵基板及其制造方法以及包含该基板的图像传感器
    • US06784949B1
    • 2004-08-31
    • US09520609
    • 2000-03-07
    • Hisashi NagataYoshihiro IzumiTakayuki Shimada
    • Hisashi NagataYoshihiro IzumiTakayuki Shimada
    • G02F11343
    • G02F1/136213H01L27/14609
    • A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.
    • 兼作像素电容电极的信号线和像素电容器线通过其图案化从相同的电极层彼此平行地制造。 因此,不需要额外的步骤来形成像素电容器线。 在这种布置中,像素电容布线和信号线彼此平行设置; 因此,防止信号线中的信号传输的延迟和像素之间的串扰发生。 结合这种布置的有源矩阵基板适用于液晶显示装置,图像传感器等。 信号线和像素电容配线彼此平行配置的结构也可以获得类似的优点,并且将由它们之间的像素电极构成存储电容器的辅助电容器电极和扫描线由 通过图案化相同的电极层。
    • 2. 发明授权
    • Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same
    • 有源矩阵基板及其制造方法以及包含该基板的图像传感器
    • US07250991B2
    • 2007-07-31
    • US10795981
    • 2004-03-10
    • Hisashi NagataYoshihiro IzumiTakayuki Shimada
    • Hisashi NagataYoshihiro IzumiTakayuki Shimada
    • G02F1/1343
    • G02F1/136213H01L27/14609
    • A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.
    • 兼作像素电容电极的信号线和像素电容器线通过其图案化从相同的电极层彼此平行地制造。 因此,不需要额外的步骤来形成像素电容器线。 在这种布置中,像素电容布线和信号线彼此平行设置; 因此,防止信号线中的信号传输的延迟和像素之间的串扰发生。 结合这种布置的有源矩阵基板适用于液晶显示装置,图像传感器等。 信号线和像素电容配线彼此平行配置的结构也可以获得类似的优点,并且将由它们之间的像素电极构成存储电容器的辅助电容器电极和扫描线由 通过图案化相同的电极层。
    • 3. 发明授权
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US06858868B2
    • 2005-02-22
    • US10458282
    • 2003-06-11
    • Hisashi NagataYoshihiro Izumi
    • Hisashi NagataYoshihiro Izumi
    • H01L27/12H01L27/146H01L29/417H01L29/786H01L29/04
    • H01L27/14609H01L27/12H01L27/14676H01L29/41733
    • On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, and the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge. As a result, excessive electric charge can be released effectively in the double gate structure while suppressing an increase in capacitor between the pixel electrode and the signal line.
    • 在形成为扫描线的透明电绝缘基板上,还形成有栅极绝缘膜,半导体层,形成源电极的n + Si层,开关元件的栅电极, 漏电极。 在上述结构的图案化之后,形成电介质膜,通过蚀刻除去与接触孔对应的部分,并施加感光性树脂以形成层间绝缘膜。 然后,透明电极从开关元件上的像素电极延伸,在电极上使用用于电极的转换层和金层。 在这种结构中,可以通过层间绝缘膜来抑制像素电极和信号线之间的电容器的增加,并且透明电极用作顶栅并释放过多的电荷。 结果,可以在抑制像素电极与信号线之间的电容器的增加的同时,在双栅极结构中有效释放过多的电荷。
    • 5. 发明授权
    • Active-matrix-type liquid crystal display panel and method of inspecting the same
    • 有源矩阵型液晶显示面板及其检查方法
    • US06882378B2
    • 2005-04-19
    • US10621559
    • 2003-07-18
    • Hisashi NagataTakayuki ShimadaYasunobu Akebi
    • Hisashi NagataTakayuki ShimadaYasunobu Akebi
    • G09F9/00G02F1/1345G02F1/136G02F1/1362G02F1/1368G09G3/00G02F1/1333G02F1/1343
    • G09G3/006G02F1/1309G02F1/1345G02F1/136259G02F2001/136254G02F2001/136263G02F2203/69
    • Data-line inspection-use switching elements for switching the supply of inspection-use display signals are individually connected to a plurality of data lines, and scanning-line inspection-use switching elements for switching the supply of inspection-use scanning signals are individually connected to a plurality of scanning lines. The data-line inspection-use switching elements connected to the data lines are connected to an inspection-use display signal line for supplying the inspection-use display signals to the data-line inspection-use switching elements. Meanwhile, three data-line inspection-use control signal lines for inputting control signals for switching on/off the data-line inspection-use switching elements are provided in correspondence with the display colors. It is thus possible to provide an active-matrix-type liquid crystal display panel which enables an inspection with higher accuracy by performing a monochromatic display, without increasing unnecessary regions and increasing processes and defective units by cutting such regions, and enables the prevention of the outflow of the defective units and the reduction of the production cost.
    • 用于切换检查用显示信号的供给的数据线检查用开关元件分别连接到多条数据线,并且用于切换检查用扫描信号的供给的扫描线检查用开关元件分别连接 到多条扫描线。 连接到数据线的数据线检查用开关元件连接到用于将检查用显示信号提供给数据线检查用开关元件的检查用显示信号线。 同时,与显示颜色相对应地提供用于输入用于切换数据线检查用开关元件的开/关的控制信号的三条数据线检查用控制信号线。 因此,可以提供一种有源矩阵型液晶显示面板,其通过进行单色显示,能够以更高的精度进行检查,而不会通过切割这些区域而增加不必要的区域和增加的处理以及有缺陷的单元,并且能够防止 有缺陷的单位流出和生产成本的降低。
    • 9. 发明授权
    • Image sensor having dual-gate transistors
    • 具有双栅极晶体管的图像传感器
    • US06642541B2
    • 2003-11-04
    • US09796676
    • 2001-03-02
    • Hisashi NagataYoshihiro Izumi
    • Hisashi NagataYoshihiro Izumi
    • H01L2904
    • H01L27/14609H01L27/12H01L27/14676H01L29/41733
    • On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, and the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge. As a result, excessive electric charge can be released effectively in the double gate structure while suppressing an increase in capacitor between the pixel electrode and the signal line.
    • 在形成为扫描线的透明电绝缘基板上,还形成有栅极绝缘膜,半导体层,形成源电极的n + Si层,开关元件的栅电极, 漏电极。 在上述结构的图案化之后,形成电介质膜,通过蚀刻除去与接触孔对应的部分,并施加感光性树脂以形成层间绝缘膜。 然后,透明电极从开关元件上的像素电极延伸,在电极上使用用于电极的转换层和金层。 在这种结构中,可以通过层间绝缘膜来抑制像素电极和信号线之间的电容器的增加,并且透明电极用作顶栅并释放过多的电荷。 结果,可以在抑制像素电极与信号线之间的电容器的增加的同时,在双栅极结构中有效释放过多的电荷。
    • 10. 发明授权
    • Active matrix substrate, method of manufacturing same, and flat-panel image sensor
    • 有源矩阵基板,制造方法和平板图像传感器
    • US06480577B1
    • 2002-11-12
    • US09542485
    • 2000-04-03
    • Yoshihiro IzumiHisashi NagataYuichi Saito
    • Yoshihiro IzumiHisashi NagataYuichi Saito
    • G09G336
    • G02F1/136227G02F1/136213H01L27/124H01L27/1255
    • In an active matrix substrate, a glass substrate is provided with TFTs having gate electrodes connected to scanning lines also provided on the glass substrate. The glass substrate is further provided with auxiliary capacitance lines, formed on the same layer as the scanning lines. Further, pixel electrodes connected to drain electrodes of the TFTs are formed on the same layer as signal lines connected to source electrodes of the TFTs. An insulating layer is provided between the layer forming the signal lines and pixel electrodes and the layer forming the drain and source electrodes. Since the insulating film is present between the signal lines and the scanning and auxiliary capacitance lines, influence on the auxiliary capacitance value can be reduced, as can a signal line capacitance value. As a result, even when the auxiliary capacitance value is increased, the signal line capacitance value remains small.
    • 在有源矩阵基板中,玻璃基板设置有TFT,其栅极连接到也设置在玻璃基板上的扫描线。 玻璃基板还设置有与扫描线形成在同一层上的辅助电容线。 此外,连接到TFT的漏电极的像素电极形成在与TFT的源电极连接的信号线的同一层上。 在形成信号线的层与像素电极之间设置绝缘层,形成漏极和源电极的层。 由于绝缘膜存在于信号线与扫描辅助电容线之间,所以可以减小辅助电容值的影响,信号线电容值也可以。 结果,即使当辅助电容值增加时,信号线电容值仍然很小。