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1. 发明授权

US06713961B2 High-intensity discharge lamp, system for lighting the lamp and lighting appliance using the lamp 失效
标题翻译：高强度放电灯，照明灯系统和使用灯具的照明器具
公开(公告)号：US06713961B2
公开(公告)日：2004-03-30
申请号：US09731860
申请日：2000-12-08
申请人： Hisashi Honda , Sadao Sakaguchi , Seiji Ashida , Shigehisa Kawatburu , Kazuhiro Miyagawa
发明人： Hisashi Honda , Sadao Sakaguchi , Seiji Ashida , Shigehisa Kawatburu , Kazuhiro Miyagawa
IPC分类号： H01J1100
CPC分类号： H01J61/827 , H01J61/025 , H01J61/073 , H01J61/12 , H01J61/26 , H01J61/30 , H01J61/302 , H01J61/34 , H01J61/547 , H01J61/56 , H01J61/82
摘要： The invention provides the high-intensity discharge lamp and the high-intensity discharge lamp lighting system and the lighting system using the high-intensity discharge lamp showing the low enough starting voltage. The high-intensity discharge lamp comprising a lighting-source bulb provided with an enclosure, a light-transmissive ceramic enclosure defining a pair of small-diameter cylinders communicating with the enclosure at both ends thereof, a pair of electrodes and discharge agent, a metallic coil which is wound on the outside surface of at least one small-diameter cylinder and coupled to the other end of the electrode to have the same potential with the electrode, a jacket-bulb which hermetically accommodates therein the lighting-source bulb and the metallic coil, and a pair of outer lead terminals which are coupled to the pair of electrodes and hermetically led outside the jacket-bulb. The metallic coil is preferably wound for four turns or more on the small-diameter cylinder, and placed its one end near the boundary to the enclosure of the light-transmissive ceramic discharge enclosure, and the winding pitch of the metallic coil resides in the range of 100% to 500%. Further, the length L2 of the metallic coil is 0.3 to 1.0 times the length of the small-diameter cylinder. Furthermore, the end of it which is opposite to the enclosure is coupled to have the same potential as the other electrode.
摘要翻译：本发明提供高强度放电灯和高强度放电灯照明系统以及使用高强度放电灯的照明系统，其显示出足够低的启动电压。高强度放电灯包括设置有外壳的照明源灯泡，限定一对在其两端与外壳连通的小直径圆筒的透光陶瓷外壳，一对电极和放电剂，金属线圈，其缠绕在至少一个小直径圆柱体的外表面上并且耦合到电极的另一端以与电极具有相同的电位;气囊容纳其中的照明源球泡和金属线圈和一对外引线端子，其连接到所述一对电极并且气密地引导到外壳灯泡的外部。金属线圈优选在小直径圆筒上卷绕四圈以上，并将其一端靠近边界附近到透光陶瓷排出罩的外壳，金属线圈的卷绕间距在该范围内为100％至500％。此外，金属线圈的长度L2是小直径圆筒的长度的0.3〜1.0倍。此外，其与外壳相对的端部被耦合以具有与另一电极相同的电位。

2. 发明授权

US07071529B2 Semiconductor device having a Damascene gate or a replacing gate 失效
标题翻译：具有大马士革门或替换门的半导体器件
公开(公告)号：US07071529B2
公开(公告)日：2006-07-04
申请号：US10863395
申请日：2004-06-09
申请人： Kazuhiro Miyagawa , Mitsuo Yasuhira , Yasushi Akasaka , Isamu Nishimura
发明人： Kazuhiro Miyagawa , Mitsuo Yasuhira , Yasushi Akasaka , Isamu Nishimura
IPC分类号： H01L29/00
CPC分类号： H01L29/66545 , H01L21/823842 , H01L21/823878 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.
摘要翻译：半导体器件包括半导体元件和至少一个虚设图案。每个或至少一些半导体元件具有镶嵌栅极结构或替代栅极结构，并且位于元件形成区域中。此外，至少一个虚拟图案位于与元件形成区域不同的区域中。虚设图案可以具有与大马士革栅极结构相同或不同种类的半导体元件结构或替代栅极结构。虚设图案可以是绝缘膜，接口晶体管或模拟电路电容器电极的图案，而不是虚拟栅极。

3. 发明申请

US20050193747A1 Vehicle control system 审中-公开
标题翻译：车辆控制系统
公开(公告)号：US20050193747A1
公开(公告)日：2005-09-08
申请号：US11068010
申请日：2005-02-28
申请人： Shinshi Kajimoto , Shoichi Kohama , Kazuhiro Miyagawa , Yukihito Takikawa
发明人： Shinshi Kajimoto , Shoichi Kohama , Kazuhiro Miyagawa , Yukihito Takikawa
IPC分类号： B60H1/00 , B60H1/32 , F25B9/00 , F25B1/00 , F25B49/00
CPC分类号： B60H1/322 , B60H1/00778 , B60H1/00814 , B60H2001/3248 , B60H2001/3255 , B60H2001/3266 , F02N11/084 , F02N2200/0806 , Y02T10/48
摘要： In a vehicle equipped with an air conditioning system (1) including a heat exchanger for heating or cooling supply air to a cabin of the vehicle by heat exchange with heat transfer medium supplied from an accessory (6, 8) driven by a vehicle engine, a value relating to the capability of the heat transfer medium to heat or cool the supply air is detected, and the engine is automatically stopped for a predetermined period when the vehicle is stopping, the air conditioning system (1) is in operation and the detected value meets a specified condition (a condition that the engine cooling water temperature is equal to or higher than a specified temperature).
摘要翻译：在配备有空调系统（1）的车辆中，所述空调系统（1）包括热交换器，用于通过与由车辆发动机驱动的附件（6,8）供应的传热介质进行热交换来加热或冷却向车辆的客舱供应空气，检测与传热介质加热或冷却供给空气的能力相关的值，并且当车辆停止时，发动机自动停止预定时间段，空调系统（1）处于运行状态并且检测到值达到指定条件（发动机冷却水温度等于或高于指定温度的条件）。

4. 发明申请

US20050001267A1 Semiconductor device having a damascene-type gate or a replacing-type gate and method of manufacturing the same 失效
标题翻译：具有镶嵌型栅极或替代型栅极的半导体器件及其制造方法
公开(公告)号：US20050001267A1
公开(公告)日：2005-01-06
申请号：US10863395
申请日：2004-06-09
申请人： Kazuhiro Miyagawa , Mitsuo Yasuhira , Yasushi Akasaka , Isamu Nishimura
发明人： Kazuhiro Miyagawa , Mitsuo Yasuhira , Yasushi Akasaka , Isamu Nishimura
IPC分类号： H01L29/423 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L23/52 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/092 , H01L29/41 , H01L29/49 , H01L29/78 , H01L29/76
CPC分类号： H01L29/66545 , H01L21/823842 , H01L21/823878 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.
摘要翻译：半导体器件包括半导体元件和至少一个虚设图案。每个或至少一些半导体元件具有镶嵌栅极结构或替代栅极结构，并且位于元件形成区域中。此外，至少一个虚拟图案位于与元件形成区域不同的区域中。虚设图案可以具有与大马士革栅极结构相同或不同种类的半导体元件结构或替代栅极结构。虚设图案可以是绝缘膜，接口晶体管或模拟电路电容器电极的图案，而不是虚拟栅极。

5. 发明申请

US20060081939A1 Semiconductor device having misfet using high dielectric constant gate insulation film and method for fabricating the same 审中-公开
标题翻译：使用高介电常数栅极绝缘膜的偏心半导体器件及其制造方法
公开(公告)号：US20060081939A1
公开(公告)日：2006-04-20
申请号：US11222139
申请日：2005-09-09
申请人： Yasushi Akasaka , Kazuhiro Miyagawa , Takaoki Sasaki
发明人： Yasushi Akasaka , Kazuhiro Miyagawa , Takaoki Sasaki
IPC分类号： H01L29/76
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with increased electron mobility and enhanced hole mobility is disclosed. In this semiconductor device, a p-type well layer and an n-type well layer are formed in a surface portion of a silicon substrate. A nitrogen-nondoped n-channel interface layer and a nitrogen-free n-channel high dielectric constant gate insulation film plus an n-channel gate electrode are formed in an n-channel MISFET as partitioned by an element isolation region. And, n-type source/drain diffusion layers are provided. In a p-channel MISFET, a nitrogen-doped p-channel interface layer, a nitrogen-added p-channel high dielectric gate insulation film and a p-channel gate electrode are formed along with p-channel source/drain diffusion layers as provided therein. A method of fabricating this semiconductor device is also disclosed.
摘要翻译：公开了具有增加的电子迁移率和增加的空穴迁移率的金属绝缘体半导体场效应晶体管（MISFET）的半导体器件。在该半导体器件中，在硅衬底的表面部分中形成p型阱层和n型阱层。在由元件隔离区分隔的n沟道MISFET中形成氮 - 非掺杂的n沟道界面层和无氮n沟道高介电常数栅极绝缘膜加上n沟道栅电极。并且，提供n型源极/漏极扩散层。在p沟道MISFET中，与所提供的p沟道源极/漏极扩散层一起形成氮掺杂p沟道界面层，添加氮的p沟道高介电栅极绝缘膜和p沟道栅电极其中。还公开了一种制造该半导体器件的方法。

6. 发明授权

US06310370B1 Solid state image sensing device and method of manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US06310370B1
公开(公告)日：2001-10-30
申请号：US09174027
申请日：1998-10-16
申请人： Tetsuhiro Inoue , Kazuhiro Miyagawa
发明人： Tetsuhiro Inoue , Kazuhiro Miyagawa
IPC分类号： H01L27148
CPC分类号： H01L27/14812
摘要： A CCD solid-state image sensing device has power supply lines formed from a poly-silicon layer and a silicide layer formed on the poly-silicon layer. The silicide layer has a reduced optical reflectivity that inhibits reflections of light on a surface of the power supply line. The silicide layer is silicon combined with a refractory metal, such as tungsten, molybdenum, titanium, or the like. Further, a surface protective film is formed on the power supply lines. The surface protective film includes silicon nitride having an increased quantity of hydrogen that is supplied to an interface between a channel layer and a diffusion layer in order to promote bonding.
摘要翻译： CCD固体摄像装置具有由多晶硅层和形成在多晶硅层上的硅化物层形成的电源线。硅化物层具有降低的光反射率，其抑制光在电源线的表面上的反射。硅化物层是与难熔金属（例如钨，钼，钛等）结合的硅。此外，在电源线上形成表面保护膜。表面保护膜包括提供给沟道层和扩散层之间的界面的增加量的氢的氮化硅以促进结合。

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