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    • 2. 发明授权
    • Dielectric filter and a method of manufacture thereof
    • 电介质滤波器及其制造方法
    • US4855693A
    • 1989-08-08
    • US227874
    • 1988-08-03
    • Hisao MatsukuraOsamu YamatoHiroyuki Horii
    • Hisao MatsukuraOsamu YamatoHiroyuki Horii
    • H01P1/205H01P7/04
    • H01P1/2056
    • A dielectric filter and a method of manufacture. The filter includes a block of ceramic material having one or more holes extending from a top surface to a bottom surface, each of which is interiorly covered with conductive material so as to form an inner conductive layer. The bottom surface and side surfaces of the block are also covered with bottom and side conductive layers electrically connected to the inner conductive layers at the bottom surface. The inner conductive layer is further connected to spaced apart top conductive layer portions provided on the top surface of the block surrounding each hole. The top layer portions are spaced from each other and have an oblique edge portion which is capacitively coupled with, and obliquely faces an upper edge portion of the side conductive layers, the oblique edge facilitating adjustment of the resonant frequency by removal of a predetermined amount of conductive material therefrom. In accordance with the method of manufacture of this filter, the filter is initially constructed to have a resonant frequency which is greater than that ultimately desired, and after measuring the resonant frequency initially obtained, a predetermined amount of conductive material is removed from the top conductive layer at a location along the oblique edge portion according to the required reduction in resonant frequency in order to reduce the resonant frequency to a desired value.
    • 4. 发明授权
    • Composite unit of optical semiconductor device and supporting substrate
and method for mounting optical semiconductor device on supporting
substrate
    • 光学半导体器件和支撑衬底的复合单元以及将光学半导体器件安装在支撑衬底上的方法
    • US6087194A
    • 2000-07-11
    • US959855
    • 1997-10-29
    • Hisao MatsukuraYasuhiko KudouHajime HottaAkio HirakawaMasaki SugawaraJiro UtsunomiyaKiyoshi Kurosawa
    • Hisao MatsukuraYasuhiko KudouHajime HottaAkio HirakawaMasaki SugawaraJiro UtsunomiyaKiyoshi Kurosawa
    • H01L31/0203H01L33/38H01L33/62H01L21/00
    • H01L33/62H01L31/0203H01L2224/16
    • Composite units of an optical semiconductor device and a supporting substrate are disclosed, in which the rear surface of the optical semiconductor device is provided with one or more electrode patterns and the top surface of the supporting substrate is provided with one or more electrode patterns. The optical semiconductor device and the supporting substrate are fixed to each other by once melting and solidifying one or more solder bumps which intervene between the one or more electrode patterns provided on the rear surface of the optical semiconductor device and the one or more electrode patterns provided on the top surface of the supporting substrate. A good grade of accuracy in the mutual geometric position of the optical semiconductor device and the supporting substrate is obtained in a horizontal direction due to a phenomenon called "the self alignment results" in this specification, in which a molten metal is inclined to become a ball based on surface tension. Methods for mounting an optical semiconductor device on a supporting substrate with a good grade of accuracy in the mutual geometric position therebetween in the horizontal direction, based on the same technical principle, are also disclosed. To realize the foregoing results, each of the composite units of an optical semiconductor device and supporting substrate in accordance with this invention is given various structures specific to each of them, and each of the methods in accordance with this invention is given various steps or processes specific to each of them.
    • 公开了光半导体器件和支撑衬底的复合单元,其中光学半导体器件的后表面设置有一个或多个电极图案,并且支撑衬底的顶表面设置有一个或多个电极图案。 光学半导体器件和支撑衬底通过一次熔化和凝固一个或多个介于设置在光学半导体器件的后表面上的一个或多个电极图案和提供的一个或多个电极图案之间的焊料凸块彼此固定 在支撑基板的顶面上。 由于在本说明书中称为“自对准结果”的现象,在水平方向上获得了光半导体装置和支撑基板的相互几何位置的良好的精度等级,其中熔融金属倾向于变为 基于表面张力的球。 还公开了基于相同的技术原理将光学半导体器件在水平方向上在相互几何位置之间以相互几何位置准确地准确地安装在支撑基板上的方法。 为了实现上述结果,根据本发明的光学半导体器件和支撑衬底的复合单元中的每一个被给予各自特定的各种结构,并且根据本发明的每个方法被给予各种步骤或过程 具体到每个人。