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1. 发明授权

US08372764B2 Fiber composite material and method for manufacturing the same 失效
标题翻译：纤维复合材料及其制造方法
公开(公告)号：US08372764B2
公开(公告)日：2013-02-12
申请号：US12309402
申请日：2007-07-12
申请人： Hiroyuki Yano , Masaya Nogi , Kentaro Abe , Shinsuke Ifuku , Noriyuki Shimoji , Yoshiaki Oku , Suguru Okuyama
发明人： Hiroyuki Yano , Masaya Nogi , Kentaro Abe , Shinsuke Ifuku , Noriyuki Shimoji , Yoshiaki Oku , Suguru Okuyama
IPC分类号： B32B3/00 , B32B5/02 , D04H1/00 , B05D3/00 , D21H19/00
CPC分类号： D21H21/26 , Y10T428/26 , Y10T428/269 , Y10T442/20 , Y10T442/614
摘要： A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 μm-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 μm-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.
摘要翻译：提供了一种高度透明的纤维复合材料，其可以通过使用减少量的原材料的简化工艺制造，并且具有高柔性和低热膨胀性并保持纤维材料的良好功能。纤维复合材料包括：平均纤维直径为4〜200nm，50μm厚的可见光透射率为3％以上的纤维集合体; 以及涂布所述纤维集合体的表面的涂层，其中所述纤维复合材料具有60μm以上的50μm的可见光透射率。利用该纤维集合体，可以通过用涂层涂布表面来平滑表面，由表面上的凹凸引起的光的散射被抑制，由此可以获得高度透明的纤维复合材料。

2. 发明申请

US20090305033A1 FIBER COMPOSITE MATERIAL AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：纤维复合材料及其制造方法
公开(公告)号：US20090305033A1
公开(公告)日：2009-12-10
申请号：US12309402
申请日：2007-07-12
申请人： Hiroyuki Yano , Masaya Nogi , Kentaro Abe , Shinsuko Ifuku , Noriyuki Shimoji , Yoshiaki Oku , Suguru Okuyama
发明人： Hiroyuki Yano , Masaya Nogi , Kentaro Abe , Shinsuko Ifuku , Noriyuki Shimoji , Yoshiaki Oku , Suguru Okuyama
IPC分类号： B32B5/02 , B32B27/12 , B05D3/02
CPC分类号： D21H21/26 , Y10T428/26 , Y10T428/269 , Y10T442/20 , Y10T442/614
摘要： A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 μm-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 μm-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.
摘要翻译：提供了一种高度透明的纤维复合材料，其可以通过使用减少量的原材料的简化工艺制造，并且具有高柔性和低热膨胀性并保持纤维材料的良好功能。纤维复合材料包括：平均纤维直径为4〜200nm，50μm厚的可见光透射率为3％以上的纤维集合体; 以及涂布所述纤维集合体的表面的涂层，其中，所述纤维复合材料具有50μm厚的可见光透射率为60％以上。利用该纤维集合体，可以通过用涂层涂布表面来平滑表面，由表面上的凹凸引起的光的散射被抑制，由此可以获得高度透明的纤维复合材料。

3. 发明申请

US20090050882A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20090050882A1
公开(公告)日：2009-02-26
申请号：US12229000
申请日：2008-08-19
申请人： Suguru Okuyama , Yoshiaki Oku , Noriyuki Shimoji
发明人： Suguru Okuyama , Yoshiaki Oku , Noriyuki Shimoji
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0037 , H01L51/0053 , H01L51/0541 , H01L51/0554 , H01L51/0562
摘要： An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.
摘要翻译：一种有机薄膜晶体管，包括：基板; 放置在基板上的栅电极; 栅极绝缘膜放置在栅电极上; 放置在栅极绝缘膜上的源电极和漏电极; 位于源电极和漏电极之间的栅极绝缘膜上的有机半导体层; 放置在有机半导体层上的空穴传输层; 放置在空穴传输层上的电子传输层; 以及放置在电子传输层上的导体层; 该有机薄膜晶体管的特征通过被氧气或湿气保护并被电磁保护并且适于一体化而稳定。

4. 发明授权

US08093586B2 Hybrid organic light-emitting transistor device and manufacturing method thereof 有权
标题翻译：混合有机发光晶体管器件及其制造方法
公开(公告)号：US08093586B2
公开(公告)日：2012-01-10
申请号：US12450462
申请日：2008-01-30
申请人： Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
发明人： Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
IPC分类号： H01L35/24 , H01L51/00 , H01L29/04 , H01L27/15 , H01L33/00
CPC分类号： H01L27/3274 , H01L27/3248 , H01L51/0055 , H01L51/006 , H01L51/0081 , H01L51/0541
摘要： A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.
摘要翻译：提供了一种混合有机发光晶体管器件及其制造方法。混合有机发光晶体管器件包括至少一个有机发光二极管器件和放置在同一衬底上的至少一个有机薄膜晶体管器件。有机发光二极管器件具有放置在阳极和阴极之间的第一有机层，有机薄膜晶体管器件具有置于源电极和漏电极上的第二有机层。第一有机层和第二有机层在空间上彼此隔离，形成第二有机层的有机材料与形成第一有机层的有机材料相同。可以容易地获得具有减小的像素尺寸和改善的孔径比的混合有机发光晶体管。

5. 发明授权

US07923721B2 Electromagnetically protected organic thin film transistor 有权
标题翻译：电磁保护有机薄膜晶体管
公开(公告)号：US07923721B2
公开(公告)日：2011-04-12
申请号：US12229000
申请日：2008-08-19
申请人： Suguru Okuyama , Yoshiaki Oku , Noriyuki Shimoji
发明人： Suguru Okuyama , Yoshiaki Oku , Noriyuki Shimoji
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0037 , H01L51/0053 , H01L51/0541 , H01L51/0554 , H01L51/0562
摘要： An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.
摘要翻译：一种有机薄膜晶体管，包括：基板; 放置在基板上的栅电极; 栅极绝缘膜放置在栅电极上; 放置在栅极绝缘膜上的源电极和漏电极; 位于源电极和漏电极之间的栅极绝缘膜上的有机半导体层; 放置在有机半导体层上的空穴传输层; 放置在空穴传输层上的电子传输层; 以及放置在电子传输层上的导体层; 该有机薄膜晶体管的特征通过被氧气或湿气保护并被电磁保护并且适于一体化而稳定。

6. 发明申请

US20100065831A1 HYBRID ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：混合有机发光晶体管器件及其制造方法
公开(公告)号：US20100065831A1
公开(公告)日：2010-03-18
申请号：US12450462
申请日：2008-01-30
申请人： Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
发明人： Noriyuki Shimoji , Suguru Okuyama , Yoshiaki Oku
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/3274 , H01L27/3248 , H01L51/0055 , H01L51/006 , H01L51/0081 , H01L51/0541
摘要： A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.
摘要翻译：提供了一种混合有机发光晶体管器件及其制造方法。混合有机发光晶体管器件包括至少一个有机发光二极管器件和放置在同一衬底上的至少一个有机薄膜晶体管器件。有机发光二极管器件具有放置在阳极和阴极之间的第一有机层，有机薄膜晶体管器件具有置于源电极和漏电极上的第二有机层。第一有机层和第二有机层在空间上彼此隔离，形成第二有机层的有机材料与形成第一有机层的有机材料相同。可以容易地获得具有减小的像素尺寸和改善的孔径比的混合有机发光晶体管。

7. 发明申请

US20080237580A1 Organic Semiconductor Element and Organic El Display Device Using the Same 审中-公开
标题翻译：有机半导体元件和使用其的有机EL显示器件
公开(公告)号：US20080237580A1
公开(公告)日：2008-10-02
申请号：US10593726
申请日：2005-03-17
申请人： Suguru Okuyama , Noriyuki Shimoji
发明人： Suguru Okuyama , Noriyuki Shimoji
IPC分类号： H01L51/00
CPC分类号： H01L27/3262 , H01L27/3248 , H01L27/3265 , H01L27/3274 , H01L51/0541 , H01L51/0545 , H01L51/057
摘要： It is provided an organic semiconductor element having an FET which can control a channel length to a small value and does not cause a rise in contact resistance due to a step portion, and an organic light emitting display device with a large aperture using the same. A first conductive layer (2) which is one of source/drain electrodes is provided onto a substrate (1), and an organic semiconductor layer (3) and a second conductive layer (4) which is the other electrode of the source/drain electrodes are provided onto the first conductive layer (2). Then on a side face of the organic semiconductor layer or a front surface of the organic semiconductor layer (3) exposed by removing a part of the second conductive layer and a side face of the second conductive layer a gate electrode (third conductive layer) (6) is provided via an insulating layer (5), thereby to form an FET. The organic EL display device has the FET having such structure laminated on an organic EL section as a drive element.
摘要翻译：提供了一种有机半导体元件，其具有FET，其能够将沟道长度控制在较小的值，并且不会引起由于台阶部分引起的接触电阻的上升，以及具有大孔径的有机发光显示装置。作为源极/漏极之一的第一导电层（2）设置在基板（1）上，并且有机半导体层（3）和第二导电层（4）作为源极/漏极的另一个电极电极设置在第一导电层（2）上。然后在有机半导体层的侧面或通过去除第二导电层的一部分和第二导电层的侧面而露出的有机半导体层（3）的前表面上形成栅电极（第三导电层）（ 6）经由绝缘层（5）提供，从而形成FET。有机EL显示装置具有层叠在作为驱动元件的有机EL部分上的这种结构的FET。

8. 发明授权

US08941296B2 Organic EL device having a high light output 有权
标题翻译：具有高光输出的有机EL器件
公开(公告)号：US08941296B2
公开(公告)日：2015-01-27
申请号：US13439574
申请日：2012-04-04
申请人： Suguru Okuyama , Noriyuki Shimoji
发明人： Suguru Okuyama , Noriyuki Shimoji
IPC分类号： H05B33/14 , H01L51/52 , G02B5/04 , G02B3/00
CPC分类号： H01L51/5268 , G02B3/0056 , G02B5/04 , H01L51/5275
摘要： An organic EL device includes a substrate, a first electrode layer formed on the substrate, an organic EL layer formed on the first electrode layer, and a second electrode layer formed on the organic EL layer. A distribution characteristic of light emitted from the first electrode layer into the substrate has a luminance in a direction of a first angle of 20 to 50 degrees measured with respect to an axis perpendicular to the substrate that is relatively high as compared to luminance in other angular directions.
摘要翻译：有机EL器件包括衬底，形成在衬底上的第一电极层，形成在第一电极层上的有机EL层和形成在有机EL层上的第二电极层。从第一电极层发射到衬底中的光的分布特性具有相对于与衬底垂直的轴相比测量的第一角度为20至50度的方向的亮度，其比其他角度的亮度相对较高方向。

9. 发明授权

US07928649B2 Organic luminescent device 有权
标题翻译：有机发光装置
公开(公告)号：US07928649B2
公开(公告)日：2011-04-19
申请号：US12317262
申请日：2008-12-19
申请人： Noriyuki Shimoji
发明人： Noriyuki Shimoji
IPC分类号： H01J1/62
CPC分类号： H05B33/10 , H01L51/5212 , H01L51/5268 , H01L51/5271 , H05B33/26 , H05B33/28
摘要： An organic luminescent device according to the present invention includes a substrate, an organic luminescent layer, and a reflection electrode. Here, the substrate has first and second principal surfaces opposed to each other; the organic luminescent layer is arranged on the first principal surface of the substrate, and is held between a pair of electrodes at least one of which is a transparent electrode; and the reflection electrode is adjacent to a luminescent area of the organic luminescent layer and is arranged on a front surface or a back surface of the transparent electrode. The transparent electrode is arranged on the first principal surface of the substrate, while the reflection electrode is arranged on the transparent electrode. The second principal surface of the substrate is formed into a rough surface at least on its part opposed to the reflection electrode. This configuration improves light extraction efficiency.
摘要翻译：根据本发明的有机发光装置包括基板，有机发光层和反射电极。这里，基板具有彼此相对的第一和第二主表面; 有机发光层配置在基板的第一主面上，并且被保持在一对电极中，其中至少一个是透明电极; 反射电极与有机发光层的发光区域相邻，配置在透明电极的正面或背面。透明电极布置在基板的第一主表面上，而反射电极布置在透明电极上。基板的第二主表面至少在其与反射电极相对的部分上形成为粗糙表面。该结构提高光提取效率。

10. 发明授权

US07354864B2 Method of producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07354864B2
公开(公告)日：2008-04-08
申请号：US11276320
申请日：2006-02-24
申请人： Noriyuki Shimoji , Masaki Takaoka
发明人： Noriyuki Shimoji , Masaki Takaoka
IPC分类号： H01L21/302
CPC分类号： F04B43/043 , B81B2203/0353 , B81C1/00626 , B81C2201/0136 , H01L29/0657
摘要： A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.
摘要翻译：公开了一种制造半导体器件的方法，其中在半导体衬底的上表面中形成有从其下表面的通孔，并且所需尺寸的开口形成在所述半导体衬底的上表面上的期望位置基质。在半导体衬底中形成用作蚀刻阻挡层的引导件。在导向件中形成宽度为W 2的开口。开口面向形成通孔所使用的掩模中的开口，其宽度W 2比掩模中的开口的宽度W 4窄。蚀刻进行的方向由蚀刻形成在导向器中的开口控制，从基板的下表面传导到基板的上表面，因此宽度W 1和上部开口的位置的偏差可以控制基板的表面。

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