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    • 3. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US07113528B2
    • 2006-09-26
    • US10622061
    • 2003-07-17
    • Kazuyuki MiyabeHiroyuki SawanoHitoshi Hotta
    • Kazuyuki MiyabeHiroyuki SawanoHitoshi Hotta
    • H01S3/04
    • H01S5/4031H01L2224/48091H01S5/02248H01S5/02276H01S5/02469H01S5/4087H01L2924/00014
    • A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.
    • 第一半导体激光元件和第二半导体激光元件配置在相同的块上,第一半导体激光元件的第一电极与块直接接触,散热效果高。 第二半导体激光元件的第二电极被布置在绝缘介电层上,并且该块和第二半导体激光元件是电绝缘的。 因此,无论构成块的材料如何,第一半导体激光元件和第二半导体激光元件都可以独立驱动。 此外,第一半导体激光元件和第二半导体激光元件之间的发光点距离仅受到各个半导体激光器的电极之间的距离和半导体激光器芯片端面上的发光点的位置的限制, 因此,尽可能短。