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    • 10. 发明授权
    • Semiconductor light-emitting device and semiconductor light-emitting device
    • 半导体发光器件和半导体发光器件
    • US07087932B2
    • 2006-08-08
    • US10088463
    • 2001-07-18
    • Hiroyuki OkuyamaMasato DoiGoshi BiwaToyoharu Oohata
    • Hiroyuki OkuyamaMasato DoiGoshi BiwaToyoharu Oohata
    • H01L29/04
    • H01L33/24H01L21/0237H01L21/0242H01L21/02433H01L21/0254H01L21/02576H01L21/02609H01L21/0262H01L21/02639H01L33/007H01L33/08
    • A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
    • 提供具有不使制造工艺复杂化的结构的半导体发光元件,可以高精度地形成,并且不会引起结晶性的劣化。 形成发光元件,其包括通过选择性地生长纤锌矿型化合物半导体,第一导电类型的包覆层,有源层和第二导电类型的覆盖层而形成的选择性晶体生长层,其中 形成在选择性晶体生长层上,其中形成有源层使得有源层平行于不同的晶面延伸,活性层的尺寸大于混晶的构成原子的扩散长度,或活性层的活性层 层的组成和厚度中的至少一个具有差异,由此形成具有多个发光波长彼此不同的发光波长区域的有源层。 元件被布置成使得电流或电流可以充电到多个发光波长区域中。 由于基于选择性增长的结构,带隙能量在相同的有源层内变化,从而以高精度形成元件或器件而不会使制造过程复杂化。