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1. 发明授权

US06278128B1 Semiconductor device having external connection terminals formed in two-dimensional area 失效
标题翻译：具有形成为二维区域的外部连接端子的半导体装置
公开(公告)号：US06278128B1
公开(公告)日：2001-08-21
申请号：US09363033
申请日：1999-07-29
申请人： Hiroyuki Noji , Koichi Fukuda
发明人： Hiroyuki Noji , Koichi Fukuda
IPC分类号： H01L2358
CPC分类号： H01L22/32 , H01L23/13 , H01L23/49827 , H01L24/48 , H01L24/49 , H01L2224/05599 , H01L2224/4824 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/12044 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A first bonding pad is formed on the surface of a semiconductor chip on which a semiconductor circuit is formed. A first insulating substrate is formed on the semiconductor chip, and a wiring layer is formed on the first insulating substrate. A second insulating substrate is formed on the first insulating substrate and wiring layer. A first region is formed by forming an opening in the second insulating substrate to expose part of the surface of the wiring layer. The first region and first bonding pad are connected by a wire. A second region is formed by forming an opening in the second insulating substrate to expose part of the surface of the wiring layer. In the second region, a bump is formed. Further, a third region is formed by forming an opening in the second insulating substrate to expose part of the surface of the wiring layer. The third region has at least an area necessary for the terminal of a measurement device to contact the third region in operation measurement.
摘要翻译：在其上形成有半导体电路的半导体芯片的表面上形成第一焊盘。在半导体芯片上形成第一绝缘基板，在第一绝缘基板上形成布线层。在第一绝缘基板和布线层上形成第二绝缘基板。通过在第二绝缘基板中形成开口以露出布线层的表面的一部分来形成第一区域。第一区域和第一焊盘通过导线连接。通过在第二绝缘基板中形成开口以露出布线层的表面的一部分来形成第二区域。在第二区域中形成凸块。此外，通过在第二绝缘基板中形成开口以暴露布线层的表面的一部分来形成第三区域。在操作测量中，第三区域至少具有测量装置的端子与第三区域接触所需的区域。

2. 发明申请

US20130113987A1 FOCUS DETECTION APPARATUS AND IMAGE PICKUP APPARATUS 有权
标题翻译：聚焦检测装置和图像拾取装置
公开(公告)号：US20130113987A1
公开(公告)日：2013-05-09
申请号：US13809982
申请日：2011-07-29
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H04N5/232
CPC分类号： H04N5/23212 , G02B7/28 , G03B13/36 , H04N5/3696
摘要： The focus detection apparatus includes an image pickup part (101-107) including first and second pixels photoelectrically converting first and second images formed by light fluxes passing through different pupil area of an image-forming optical system to produce first and second image signals, a first signal processor (121) performing a first process to smooth the first and second image signals by using mutually different filters, a second signal processor (121) performing a second process to sharpen the first and second image signals by using mutually different filters. A calculating part (121) calculates a defocus amount by using the first and second image signals subjected to the first process when a contrast value is higher than a predetermined value, and calculates the defocus amount by using the first and second image signals subjected to the second process when the contrast value is lower than the predetermined value.
摘要翻译：焦点检测装置包括图像拾取部分（101-107），其包括光电转换通过图像形成光学系统的不同瞳孔区域的光束形成的第一和第二图像的第一和第二像素，以产生第一和第二图像信号，第一信号处理器（121）执行通过使用相互不同的滤波器平滑第一和第二图像信号的第一处理器，第二信号处理器（121）执行通过使用相互不同的滤波器来锐化第一和第二图像信号的第二处理。计算部件（121）当对比度值高于预定值时通过使用经受第一处理的第一和第二图像信号来计算散焦量，并且通过使用经受第一和第二图像信号的第一和第二图像信号来计算散焦量当对比度值低于预定值时的第二处理。

3. 发明授权

US08391077B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08391077B2
公开(公告)日：2013-03-05
申请号：US12875662
申请日：2010-09-03
申请人： Rieko Tanaka , Koichi Fukuda
发明人： Rieko Tanaka , Koichi Fukuda
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/06 , G11C16/32 , G11C16/3418
摘要： Nonvolatile semiconductor memory device according to one embodiment includes: a plurality of planes; a memory cell array provided in the plurality of planes respectively; bit lines; and a control circuit. Each memory cell array is configured as an array of NAND cell units each including a memory string. The memory string includes a plurality of nonvolatile memory cells connected in series. The bit lines are connected to a first end of the NAND cell units, respectively. The control circuit controls a write operation of charging the bit lines up to a certain voltage value, and then setting data in the nonvolatile memory cells to a certain threshold voltage distribution state. The control circuit is configured to be capable of executing an operation of charging the bit lines in a write operation by varying timings of starting charging the bit lines among the plurality of planes.
摘要翻译：根据一个实施例的非易失性半导体存储器件包括：多个平面; 分别设置在所述多个平面中的存储单元阵列; 位线和控制电路。每个存储单元阵列被配置为每个包括存储器串的NAND单元阵列的阵列。存储器串包括串联连接的多个非易失性存储单元。位线分别连接到NAND单元单元的第一端。控制电路控制对位线充电达一定电压值的写入操作，然后将非易失性存储单元中的数据设置到一定的阈值电压分布状态。控制电路被配置为能够通过改变开始对多个平面中的位线充电的定时来执行在写入操作中对位线进行充电的操作。

4. 发明授权

US08304788B2 Display apparatus and method of producing same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08304788B2
公开(公告)日：2012-11-06
申请号：US12674013
申请日：2008-11-13
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H01L33/00
CPC分类号： H01L51/5271 , H01L51/5275
摘要： To further improve light extraction efficiency, a light-emitting apparatus includes a cavity for resonating light emitted from a emission layer between a first reflective surface and a second reflective surface. The first reflective surface is located on a first electrode side relative to the emission layer. The second reflective surface is located on a second electrode side relative to the emission layer. A periodic structure for extracting, to outside of a light-emitting device, light which is generated from the emission layer and wave-guided in an in-plane direction of the light-emitting device between the first reflective surface and the second reflective surface is formed in the first reflective surface, or in the second reflective surface, or between the first reflective surface and the second reflective surface.
摘要翻译：为了进一步提高光提取效率，发光装置包括用于使从第一反射表面和第二反射表面之间的发射层发射的光谐振的腔。第一反射表面相对于发射层位于第一电极侧。第二反射表面相对于发射层位于第二电极侧。用于向发光装置外部提取从发光层产生并在发光装置的面内方向上在第一反射面和第二反射面之间进行波导的光的周期性结构是，形成在第一反射表面中，或在第二反射表面中，或在第一反射表面和第二反射表面之间。

5. 发明授权

US08232572B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08232572B2
公开(公告)日：2012-07-31
申请号：US12674240
申请日：2008-11-13
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H01L33/10
CPC分类号： H01L51/5271 , H01L51/5275 , H05B33/10
摘要： To improve light extraction efficiency of a light emitting device, the light emitting device includes: a first electrode; a second electrode provided on a light extraction side; an emission layer formed between the first electrode and the second electrode; a reflection surface located on the first electrode with respect to the emission layer; and a periodic structure at a node of interference generated by light emitted from the emission layer and light emitted from the emission layer to the reflection surface side and reflected on the reflection surface. The periodic structure is for diffracting light generated in the emission layer and guided in an in-plane direction of the light emitting device in a direction to the second electrode, and for extracting the light to the outside of the light emitting device.
摘要翻译：为了提高发光器件的光提取效率，发光器件包括：第一电极; 设置在光提取侧的第二电极; 形成在第一电极和第二电极之间的发射层; 相对于所述发光层位于所述第一电极上的反射面; 以及在从发射层发射的光和从发射层发射到反射表面侧并在反射表面上反射的光产生的干扰的节点处的周期性结构。周期性结构用于衍射在发射层中产生的光，并沿着与第二电极的方向在发光器件的面内方向上被引导，并将光提取到发光器件的外部。

6. 发明申请

US20120032243A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120032243A1
公开(公告)日：2012-02-09
申请号：US13052152
申请日：2011-03-21
申请人： Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
发明人： Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
IPC分类号： H01L29/94
CPC分类号： H01L27/11526 , H01L27/11521 , H01L27/11529
摘要： According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.
摘要翻译：根据一个实施例，半导体器件包括设置在半导体衬底中的至少一个半导体区域和包括设置在半导体区域中的多个电容器的电容器组，每个电容器包括设置在半导体区域上的电容器绝缘膜，电容器设置在电容器绝缘膜上的电极以及设置在与电容器电极相邻的半导体区域中的至少一个扩散层。

7. 发明申请

US20100289038A1 DISPLAY APPARATUS 有权
标题翻译：显示设备
公开(公告)号：US20100289038A1
公开(公告)日：2010-11-18
申请号：US12777136
申请日：2010-05-10
申请人： Koichi Fukuda , Rei Kurashima , Hideo Mori
发明人： Koichi Fukuda , Rei Kurashima , Hideo Mori
IPC分类号： H01L33/08 , H01L33/10
CPC分类号： H01L51/5281 , H01L27/3211
摘要： A display apparatus includes a light emitting device emitting red light, a light emitting device emitting green light, and a light emitting device emitting blue light. The display apparatus includes a circular polarizer provided on the light extraction side of the light emitting devices. Each light emitting device includes a periodic structure for extracting light from the light extraction side of the light emitting device, the light being generated in a light emitting layer and guided in the in-plane direction of a substrate. Each period of the periodic structure of the light emitting devices is identical, and the period of the periodic structure is more than 200 nm and 380 nm or less.
摘要翻译：显示装置包括发射红光的发光装置，发出绿光的发光装置和发出蓝光的发光装置。显示装置包括设置在发光装置的光提取侧的圆偏振片。每个发光器件包括用于从发光器件的光提取侧提取光的周期性结构，所述光在发光层中产生并在衬底的面内方向上被引导。发光器件的周期结构的每个周期是相同的，并且周期性结构的周期大于200nm和380nm以下。

8. 发明申请

US20100060156A1 DISPLAY APPARATUS 有权
标题翻译：显示设备
公开(公告)号：US20100060156A1
公开(公告)日：2010-03-11
申请号：US12620175
申请日：2009-11-17
申请人： Koichi Fukuda , Ryuichiro Isobe
发明人： Koichi Fukuda , Ryuichiro Isobe
IPC分类号： H01J1/62
CPC分类号： H01L51/5284 , H01L27/322 , H01L51/5265
摘要： A display apparatus includes a substrate; a plurality of pixels arranged above the substrate, each including a plurality of sub-pixels emitting light of different colors; a circularly polarizing member disposed above the pixels, the transmittance of light of a selected color through the circularly polarizing member being higher than that of light of the other colors therethrough; and a light-absorbing member disposed only above the sub-pixels, emitting light of the non-selected colors. The light-absorbing member absorbs light of the selected color.
摘要翻译：显示装置包括：基板; 多个像素，其布置在所述衬底上方，每个像素包括发射不同颜色的光的多个子像素; 设置在像素上方的圆偏振构件，通过圆偏振构件的所选颜色的透光率比通过其它颜色的光的透射率高; 以及光吸收部件，其仅设置在子像素的上方，发射未被选择的颜色的光。光吸收构件吸收所选颜色的光。

9. 发明授权

US07641970B2 Dielectric particle aggregate comprising a surface layer of zinc titanate, low temperature sinterable dielectric ceramic composition using same 有权
标题翻译：包含钛酸锌表面层的介电颗粒聚集体，使用其的低温可烧结介电陶瓷组合物
公开(公告)号：US07641970B2
公开(公告)日：2010-01-05
申请号：US10590779
申请日：2005-03-03
申请人： Takafumi Kawano , Masataka Yamanaga , Koichi Fukuda
发明人： Takafumi Kawano , Masataka Yamanaga , Koichi Fukuda
IPC分类号： B32B5/16 , B05D3/02 , C04B35/462 , C04B35/468 , C04B35/47
CPC分类号： C04B35/462 , B32B2311/08 , B32B2311/12 , C01G23/002 , C01G23/003 , C01P2002/72 , C01P2002/85 , C01P2004/04 , C04B35/4682 , C04B35/47 , C04B35/62805 , C04B35/62821 , C04B35/62897 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3234 , C04B2235/3284 , C04B2235/3298 , C04B2235/365 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/80 , C04B2237/346 , C04B2237/407 , C04B2237/408 , H01B3/12 , H01G4/1218 , H01G4/1227 , H01G4/129 , H01G4/30 , Y10T428/12181 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： A low temperature sinterable dielectric ceramic composition is obtained by bending 2.5-20 parts by weight of a glass component per 100 parts by weight of an aggregate of dielectric particles which are composed of Ti-containing dielectric material and contain an oxide including Ti and Zn in the surface portions. A low temperature sintered dielectric ceramic is produced by sintering this low temperature sinterable dielectric ceramic composition at 880 to 1000° C. With this low temperature sinterable dielectric ceramic composition, there can be obtained a multiplayer electronic component having an internal conductor composed of Ag, Cu or an alloy containing at least one of them.
摘要翻译：低温可烧结介电陶瓷组合物是通过以每100重量份的由含Ti电介质材料构成并含有包含Ti和Zn的氧化物的电介质颗粒的聚集体的形式弯曲2.5-20重量份的玻璃组分表面部分。通过在880〜1000℃烧结该低温烧结性电介质陶瓷组合物来制造低温烧结介电陶瓷。使用该低温烧结性介电陶瓷组合物，可以获得具有由Ag，Cu构成的内部导体的多层电子元件或含有其中至少一种的合金。

10. 发明授权

US07599066B2 Localized plasmon resonance sensor 失效
标题翻译：局部等离子体共振传感器
公开(公告)号：US07599066B2
公开(公告)日：2009-10-06
申请号：US11441029
申请日：2006-05-26
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： G01N21/55
CPC分类号： G01N21/554 , B82Y15/00 , B82Y30/00 , G01N21/05 , G01N33/54373 , G01N2021/0346
摘要： A localized plasmon resonance sensor for detecting a change in optical constant uses a structure including metal. In a response spectrum with respect to light incident on the structure, there are at least two resonance peaks including at least one resonance peak shifted to a longer wavelength side and at least another peak shifted to a shorter wavelength side, by the change in optical constant.
摘要翻译：用于检测光学常数变化的局部等离子体共振传感器使用包括金属的结构。在相对于入射到结构上的光的响应光谱中，存在至少两个谐振峰，包括至少一个谐振峰移动到较长波长侧，并且至少另一个峰偏移到较短波长侧，通过光学常数的变化。

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