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    • 7. 发明申请
    • FILM FORMATION METHOD, DIE, AND METHOD OF MANUFACTURING THE SAME
    • 胶片形成方法,制造方法及其制造方法
    • US20100209608A1
    • 2010-08-19
    • US12768320
    • 2010-04-27
    • Shigeru HosoeHiroyuki Matsuda
    • Shigeru HosoeHiroyuki Matsuda
    • C23C16/44C23C16/32
    • C23C16/325C23C16/042C23C16/56
    • An objective is to provide a film formation method with which a layer having reduced defects, a die obtained by the film formation method, and a method of manufacturing the die. Free carbons increase in the case of reducing hydrogen gas as a carrier gas, so that concave portions are generated and increased during the molding transfer surface process. It was commonly known that hydrogen gas employed for the thermal CVD was set to 2 moles, but it was found out that generation of concave portions was possible to be largely inhibited by setting hydrogen gas to at least 3 moles. However, a level of up to 8 moles is preferable in view of practical use, since dilution of the total raw material gas causes a decline of reaction speed in the case of too much increase of hydrogen gas, resulting in the low speed of film formation.
    • 目的是提供一种具有减少缺陷的层的成膜方法,通过成膜方法获得的管芯以及制造该管芯的方法。 在还原作为载气的氢气的情况下,游离碳增加,从而在模塑转印表面处理过程中产生和增加凹部。 通常已知将用于热CVD的氢气设定为2摩尔,但是发现通过将氢气设置为至少3摩尔可以极大地抑制凹部的产生。 然而,考虑到实际应用,优选达8摩尔的水平,因为总原料气体的稀释导致在氢气过多增加的情况下反应速度的下降,导致成膜速度低 。
    • 8. 发明申请
    • Film formation method, die, and method of manufacturing the same
    • 成膜方法,模具及其制造方法
    • US20070281183A1
    • 2007-12-06
    • US11802851
    • 2007-05-25
    • Shigeru HosoeHiroyuki Matsuda
    • Shigeru HosoeHiroyuki Matsuda
    • C23C16/00B32B9/00
    • C23C16/325C23C16/042C23C16/56
    • An objective is to provide a film formation method with which a layer having reduced defects, a die obtained by the film formation method, and a method of manufacturing the die. Free carbons increase in the case of reducing hydrogen gas as a carrier gas, so that concave portions are generated and increased during the molding transfer surface process. It was commonly known that hydrogen gas employed for the thermal CVD was set to 2 moles, but it was found out that generation of concave portions was possible to be largely inhibited by setting hydrogen gas to at least 3 moles. However, a level of up to 8 moles is preferable in view of practical use, since dilution of the total raw material gas causes a decline of reaction speed in the case of too much increase of hydrogen gas, resulting in the low speed of film formation.
    • 目的是提供一种具有减少缺陷的层的成膜方法,通过成膜方法获得的管芯以及制造该管芯的方法。 在还原氢气作为载气的情况下游离碳增加,从而在模塑转印表面处理过程中产生和增加凹部。 通常已知将用于热CVD的氢气设定为2摩尔,但是发现通过将氢气设置为至少3摩尔可以极大地抑制凹部的产生。 然而,考虑到实际应用,优选达8摩尔的水平,因为总原料气体的稀释导致在氢气过多增加的情况下反应速度的下降,导致成膜速度低 。