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1. 发明授权

US09171886B2 Semiconductor memory device and manufacturing method thereof 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US09171886B2
公开(公告)日：2015-10-27
申请号：US13032359
申请日：2011-02-22
申请人： Hiroyuki Kanaya , Yukinori Koyama , Susumu Shuto , Kuniaki Sugiura
发明人： Hiroyuki Kanaya , Yukinori Koyama , Susumu Shuto , Kuniaki Sugiura
IPC分类号： H01L29/82 , H01L27/22 , H01L21/768 , H01L43/12
CPC分类号： H01L27/228 , H01L21/76897 , H01L43/12
摘要： A semiconductor memory device according to embodiments includes a semiconductor substrate and plural switching transistors provided on the semiconductor substrate. In the semiconductor memory device, a contact plug is embedded between adjacent two of the switching transistors, and is insulated from gates of the adjacent two switching transistors. The contact plug is also electrically connected to a source or a drain of each of the adjacent two switching transistors, and an upper surface of the contact plug is at a position higher than an upper surface of the switching transistors. A memory element is provided on the upper surface of the contact plug and stores data. A wiring is provided on the memory element.
摘要翻译：根据实施例的半导体存储器件包括半导体衬底和设置在半导体衬底上的多个开关晶体管。在半导体存储器件中，接触插头嵌入相邻的两个开关晶体管之间，并且与相邻的两个开关晶体管的栅极绝缘。接触插塞也电连接到相邻的两个开关晶体管中的每一个的源极或漏极，并且接触插塞的上表面位于高于开关晶体管的上表面的位置。存储元件设置在接触插头的上表面上并存储数据。在存储元件上提供布线。

2. 发明申请

US20110266600A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110266600A1
公开(公告)日：2011-11-03
申请号：US13032359
申请日：2011-02-22
申请人： Hiroyuki Kanaya , Yukinori Koyama , Susumu Shuto , Kuniaki Sugiura
发明人： Hiroyuki Kanaya , Yukinori Koyama , Susumu Shuto , Kuniaki Sugiura
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L27/228 , H01L21/76897 , H01L43/12
摘要： A semiconductor memory device according to embodiments includes a semiconductor substrate and plural switching transistors provided on the semiconductor substrate. In the semiconductor memory device, a contact plug is embedded between adjacent two of the switching transistors, and is insulated from gates of the adjacent two switching transistors. The contact plug is also electrically connected to a source or a drain of each of the adjacent two switching transistors, and an upper surface of the contact plug is at a position higher than an upper surface of the switching transistors. A memory element is provided on the upper surface of the contact plug and stores data. A wiring is provided on the memory element.
摘要翻译：根据实施例的半导体存储器件包括半导体衬底和设置在半导体衬底上的多个开关晶体管。在半导体存储器件中，接触插头嵌入相邻的两个开关晶体管之间，并且与相邻的两个开关晶体管的栅极绝缘。接触插塞也电连接到相邻的两个开关晶体管中的每一个的源极或漏极，并且接触插塞的上表面位于高于开关晶体管的上表面的位置。存储元件设置在接触插头的上表面上并存储数据。在存储元件上设置接线。

3. 发明授权

US09276195B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US09276195B2
公开(公告)日：2016-03-01
申请号：US13965149
申请日：2013-08-12
申请人： Hiroyuki Kanaya , Kuniaki Sugiura
发明人： Hiroyuki Kanaya , Kuniaki Sugiura
IPC分类号： H01L29/82 , H01L43/00 , H01L43/02 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.
摘要翻译：根据一个实施例，磁性随机存取存储器包括磁阻元件，布置在磁阻元件下方并连接到磁阻元件的触点，以及从触点的周边连续形成到磁阻元件的侧表面的绝缘膜，以及包括覆盖磁阻元件的侧表面的保护部分。

4. 发明授权

US09590174B2 Magnetoresistive memory device and manufacturing method of the same 有权
标题翻译：磁阻存储器件及其制造方法相同
公开(公告)号：US09590174B2
公开(公告)日：2017-03-07
申请号：US14629120
申请日：2015-02-23
申请人： Masaru Toko , Kuniaki Sugiura , Yutaka Hashimoto , Katsuya Nishiyama , Tadashi Kai
发明人： Masaru Toko , Kuniaki Sugiura , Yutaka Hashimoto , Katsuya Nishiyama , Tadashi Kai
IPC分类号： H01L21/02 , H01L21/00 , H01L43/12 , H01L43/08 , H01L43/02 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.
摘要翻译：根据一个实施例，磁阻存储器件的制造方法包括在衬底上形成第一磁性层，在第一磁性层上形成磁阻效应元件，在磁阻效应元件的一部分上形成掩模，选择性地蚀刻磁阻使用该掩模，在通过蚀刻暴露的磁阻效应元件的侧壁上形成侧壁绝缘膜，使用掩模和侧壁绝缘膜选择性地蚀刻第一磁性层，并在侧壁上形成含有磁性材料的沉积层的第一磁性层和侧壁绝缘膜，并将离子引入沉积层。

5. 发明授权

US08081505B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08081505B2
公开(公告)日：2011-12-20
申请号：US12556389
申请日：2009-09-09
申请人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
发明人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译：磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

6. 发明授权

US09368717B2 Magnetoresistive element and method for manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09368717B2
公开(公告)日：2016-06-14
申请号：US14200742
申请日：2014-03-07
申请人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
发明人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
IPC分类号： H01L27/02 , H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层。参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。第二区域包含包含在第一区域中的元素，而另一元素与元素不同。磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。存储层没有另一个元素。

7. 发明授权

US08542519B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08542519B2
公开(公告)日：2013-09-24
申请号：US13035168
申请日：2011-02-25
申请人： Yoshiaki Asao , Takeshi Kajiyama , Kuniaki Sugiura
发明人： Yoshiaki Asao , Takeshi Kajiyama , Kuniaki Sugiura
IPC分类号： G11C11/02
CPC分类号： H01L29/82
摘要： According to one embodiment, a semiconductor memory device is disclosed. The device includes MOSFET1 and MOSFET2 arranged in a first direction, variable resistive element (hereafter R1) above MOSFET1 and MOSFET2, a lower end of the R1 being connected to drains of MOSFET1 and MOSFET2, MOSFET3 and MOSFET4 arranged in the first direction, variable resistive element (hereafter R2) above MOSFET3 and MOSFET4, and a lower end of the R2 being connected to drains of MOSFET3 and MOSFET4. The device further includes first wiring line extending in the first direction and connected to sources of MOSFET1 and MOSFET2, second wiring line extending in the first direction and connected to sources of MOSFET3 and MOSFET4, upper electrode connecting upper end of the R1 and upper end of the R2, and third wiring line extending in the first direction and connected to the upper electrode.
摘要翻译：根据一个实施例，公开了一种半导体存储器件。该器件包括在第一方向上布置的MOSFET1和MOSFET2，MOSFET1和MOSFET2上方的可变电阻元件（以下称为R1），R1的下端连接到沿第一方向布置的MOSFET1和MOSFET2，MOSFET3和MOSFET4的漏极，可变电阻元件（以下称为R2），MOSFET3和MOSFET4之上，R2的下端连接到MOSFET3和MOSFET4的漏极。该器件还包括沿第一方向延伸并连接到MOSFET1和MOSFET2的源极的第一布线，第二布线沿第一方向延伸并连接到MOSFET3和MOSFET4的源极，上电极连接R1的上端和上端 R2和第三布线沿第一方向延伸并连接到上电极。

8. 发明申请

US20100102407A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20100102407A1
公开(公告)日：2010-04-29
申请号：US12556389
申请日：2009-09-09
申请人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
发明人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译：磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

9. 发明申请

US20100097846A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100097846A1
公开(公告)日：2010-04-22
申请号：US12563465
申请日：2009-09-21
申请人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
发明人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.
摘要翻译：磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

10. 发明授权

US09231196B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09231196B2
公开(公告)日：2016-01-05
申请号：US14200670
申请日：2014-03-07
申请人： Kuniaki Sugiura , Tadashi Kai
发明人： Kuniaki Sugiura , Tadashi Kai
IPC分类号： H01L43/02 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element is disclosed. The element includes a lower electrode, a stacked body provided on the lower electrode and including a first magnetic layer, a tunnel barrier layer and a second magnetic layer. The first magnetic layer is under the tunnel barrier layer, the second magnetic layer is on the tunnel barrier layer. The first magnetic layer includes a first region and a second region outside the first region to surround the first region. The second region includes an element in the first region and other element being different from the element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。元件包括下电极，设置在下电极上并包括第一磁性层，隧道势垒层和第二磁性层的层叠体。第一磁性层位于隧道势垒层下方，第二磁性层位于隧道势垒层上。第一磁性层包括第一区域和第一区域之外的第二区域以围绕第一区域。所述第二区域包括所述第一区域中的元件，并且所述元件与所述元件不同。

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