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1. 发明授权

US06982444B2 Ferroelectric memory device having a hydrogen barrier film 失效
标题翻译：具有氢阻挡膜的铁电存储器件
公开(公告)号：US06982444B2
公开(公告)日：2006-01-03
申请号：US10443107
申请日：2003-05-22
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

2. 发明申请

US20060017086A1 Semiconductor device and method for manufacturing the same 审中-公开
公开(公告)号：US20060017086A1
公开(公告)日：2006-01-26
申请号：US11223958
申请日：2005-09-13
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

3. 发明授权

US06586790B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06586790B2
公开(公告)日：2003-07-01
申请号：US09359324
申请日：1999-07-23
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

4. 发明授权

US5990507A Semiconductor device having ferroelectric capacitor structures 失效
标题翻译：具有铁电电容器结构的半导体器件
公开(公告)号：US5990507A
公开(公告)日：1999-11-23
申请号：US889470
申请日：1997-07-08
申请人： Hiroshi Mochizuki , Kumi Okuwada , Hiroyuki Kanaya , Osamu Hidaka , Susumu Shuto , Iwao Kunishima
发明人： Hiroshi Mochizuki , Kumi Okuwada , Hiroyuki Kanaya , Osamu Hidaka , Susumu Shuto , Iwao Kunishima
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/11507 , H01L21/76895 , H01L27/10852 , H01L27/11502 , H01L28/55
摘要： A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the MIS transistor has been formed, selectively forming contact holes in the insulation film, embedding, into the contact hole, a capacitor contact plug having a lower end which is in contact with one of the drain region and the source region of the MIS transistor, forming a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode on the insulation film after the capacitor contact plug has been formed, and forming an electric wire for establishing a connection between the upper electrode of the ferroelectric capacitor and an upper surface of the capacitor contact plug.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底的表面上形成包括漏区和源区的MIS晶体管，所述漏极区和源区各自由杂质扩散区形成，在所述半导体衬底之后形成绝缘膜 MIS晶体管已经形成，在绝缘膜中选择性地形成接触孔，将接触孔埋入电容器接触插塞中，该电容器接触插塞的下端与MIS晶体管的漏极区域和源极区域中的一个接触，形成在形成电容器接触插塞之后，在绝缘膜上形成具有下电极，铁电体膜和上电极的铁电电容器，并且形成用于建立铁电电容器的上电极和上电极之间的连接的电线电容器接触插头。

5. 发明授权

US06190957B1 Method of forming a ferroelectric device 失效
标题翻译：形成铁电体器件的方法
公开(公告)号：US06190957B1
公开(公告)日：2001-02-20
申请号：US09324501
申请日：1999-06-02
申请人： Hiroshi Mochizuki , Kumi Okuwada , Hiroyuki Kanaya , Osamu Hidaka , Susumu Shuto , Iwao Kunishima
发明人： Hiroshi Mochizuki , Kumi Okuwada , Hiroyuki Kanaya , Osamu Hidaka , Susumu Shuto , Iwao Kunishima
IPC分类号： H01L218242
CPC分类号： H01L27/11507 , H01L21/76895 , H01L27/10852 , H01L27/11502 , H01L28/55
摘要： A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the MIS transistor has been formed, selectively forming contact holes in the insulation film, embedding, into the contact hole, a capacitor contact plug having a lower end which is in contact with one of the drain region and the source region of the MIS transistor, forming a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode on the insulation film after the capacitor contact plug has been formed, and forming an electric wire for establishing a connection between the upper electrode of the ferroelectric capacitor and an upper surface of the capacitor contact plug.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底的表面上形成包括漏区和源区的MIS晶体管，所述漏极区和源区各自由杂质扩散区形成，在所述半导体衬底之后形成绝缘膜 MIS晶体管已经形成，在绝缘膜中选择性地形成接触孔，将接触孔埋入电容器接触插塞中，该电容器接触插塞的下端与MIS晶体管的漏极区域和源极区域中的一个接触，形成在形成电容器接触插塞之后，在绝缘膜上形成具有下电极，铁电体膜和上电极的铁电电容器，并且形成用于建立铁电电容器的上电极和上电极之间的连接的电线电容器接触插头。

6. 发明授权

US06750093B2 Semiconductor integrated circuit and method for manufacturing the same 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US06750093B2
公开(公告)日：2004-06-15
申请号：US10310954
申请日：2002-12-06
申请人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
发明人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a fist hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.
摘要翻译：半导体集成电路具有铁电电容器。铁电电容器包括形成在半导体衬底上的第一绝缘膜，第一电极，其被埋在形成在第一绝缘膜中并且其表面平坦化的第一孔中;第二绝缘膜，形成在第一绝缘膜上方，并具有第二绝缘膜在第二孔中形成的铁电膜，形成在第二孔中并在铁电体膜上方的第二电极，并且与第二绝缘膜的表面齐平。

7. 发明授权

US06511877B2 Semiconductor integrated circuit and method for manufacturing the same 有权
公开(公告)号：US06511877B2
公开(公告)日：2003-01-28
申请号：US09922074
申请日：2001-08-06
申请人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
发明人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a fist hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.

8. 发明授权

US06303958B1 Semiconductor integrated circuit and method for manufacturing the same 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US06303958B1
公开(公告)日：2001-10-16
申请号：US09095890
申请日：1998-06-11
申请人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
发明人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a first hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.
摘要翻译：半导体集成电路具有铁电电容器。铁电电容器包括形成在半导体衬底上的第一绝缘膜，第一电极，其被埋在形成在第一绝缘膜中的表面平坦化的第一孔中，形成在第一绝缘膜上方的第二绝缘膜，在第二孔中形成的铁电膜，形成在第二孔中并在铁电体膜上方的第二电极，并且与第二绝缘膜的表面齐平。

9. 发明授权

US06699726B2 Semiconductor device and method for the manufacture thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06699726B2
公开(公告)日：2004-03-02
申请号：US10336012
申请日：2003-01-03
申请人： Osamu Hidaka , Sumito Ootsuki , Hiroshi Mochizuki , Hiroyuki Kanaya , Kumi Okuwada , Tomio Katata , Norihisa Arai , Hiroyuki Takenaka
发明人： Osamu Hidaka , Sumito Ootsuki , Hiroshi Mochizuki , Hiroyuki Kanaya , Kumi Okuwada , Tomio Katata , Norihisa Arai , Hiroyuki Takenaka
IPC分类号： H01G706
CPC分类号： H01L21/76831 , H01L21/76801 , H01L21/76804 , H01L21/76834 , H01L21/7685 , H01L21/76895 , H01L23/5226 , H01L27/11502 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor substrate.
摘要翻译：半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。在半导体衬底上形成连接到另一个漏极区域和源极区域的布线。

10. 发明授权

US06521927B2 Semiconductor device and method for the manufacture thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06521927B2
公开(公告)日：2003-02-18
申请号：US09102616
申请日：1998-06-23
申请人： Osamu Hidaka , Sumito Ootsuki , Hiroshi Mochizuki , Hiroyuki Kanaya , Kumi Okuwada , Tomio Katata , Norihisa Arai , Hiroyuki Takenaka
发明人： Osamu Hidaka , Sumito Ootsuki , Hiroshi Mochizuki , Hiroyuki Kanaya , Kumi Okuwada , Tomio Katata , Norihisa Arai , Hiroyuki Takenaka
IPC分类号： H01L31119
CPC分类号： H01L21/76831 , H01L21/76801 , H01L21/76804 , H01L21/76834 , H01L21/7685 , H01L21/76895 , H01L23/5226 , H01L27/11502 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor. substrate.
摘要翻译：半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。在半导体上形成与漏极区域和源极区域中的另一个连接的布线。基质。

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