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    • 1. 发明申请
    • VALVE TIMING CONTROL DEVICE OF INTERNAL COMBUSTION ENGINE
    • 内燃机的时间控制装置
    • US20120017857A1
    • 2012-01-26
    • US13080239
    • 2011-04-05
    • Hiroyuki KATOSeiji TsurutaKotaro WatanabeYoshinori Ichinosawa
    • Hiroyuki KATOSeiji TsurutaKotaro WatanabeYoshinori Ichinosawa
    • F01L1/344
    • F02D13/0219F01L1/3442F01L2001/3443F01L2001/34433F01L2001/34453F01L2001/34459F01L2001/34469F02D2013/0292Y02T10/18
    • A valve timing control device comprises a drive rotation member driven by a crankshaft of an internal combustion engine; a driven rotation member fixed to a camshaft that actuates engine valves to open and close, the drive rotation member and driven rotation member being coaxially arranged to make a relative rotation therebetween; a phase varying mechanism that rotates the driven rotation member relative to the drive rotation member within a given angle, the phase varying mechanism being able to cause the driven rotation member to take the most-retarded phase position, the most-advanced phase position and a middle phase position defined between the most-retarded phase position and the most-advanced phase position; and a position keeping mechanism that is able to keep the driven rotation member at least the most-retarded phase position and the middle phase position at the time of starting the engine, and is able to select one of the most-retarded phase position and the middle phase position in accordance with an operation condition of the engine.
    • 气门正时控制装置包括由内燃机的曲轴驱动的驱动旋转构件; 固定在凸轮轴上的从动旋转构件,其驱动发动机气门打开和关闭,所述驱动旋转构件和从动旋转构件同轴布置以在其间进行相对旋转; 相变机构,其使从动旋转构件相对于驱动旋转构件在给定角度内旋转,所述相变机构能够使从动旋转构件采取最延迟的相位位置,最前进的相位位置和 在最相位位置和最高级相位之间定义的中间位置; 以及位置保持机构,其能够将从动旋转构件保持在起动发动机时的至少最延迟的相位位置和中间相位置,并且能够选择最延迟的相位位置和 根据发动机的运转状态的中间位置。
    • 3. 发明申请
    • Valve Timing Control Apparatus
    • 气门正时控制装置
    • US20120103289A1
    • 2012-05-03
    • US13267082
    • 2011-10-06
    • Hiroyuki KATOYoshinori Ichinosawa
    • Hiroyuki KATOYoshinori Ichinosawa
    • F01L1/34
    • F01L1/3442F01L2001/34423F01L2001/34469F01L2001/34476
    • A valve timing control apparatus includes a driving rotary member to receive a rotational force from a crankshaft of an engine, and a vane rotor connected with a camshaft and arranged to rotate relative to the driving rotary member, with at least one vane defining a retard pressure chamber and an advance pressure chamber in the inside of the driving rotary member. A lock member is received slidably in the vane of the vane rotor and arranged to engage with a lock hole when the vane is rotated to a predetermined angular position. The lock member includes forward and rearward end portions arranged to receive equal fluid pressures. The lock member further includes a pressure receiving portion to which an operating fluid pressure is selectively applied to force the lock member away from the lock hole.
    • 气门正时控制装置包括:驱动旋转构件,用于接受来自发动机的曲轴的旋转力;以及叶片转子,其与凸轮轴连接并且布置成相对于驱动旋转构件旋转,至少一个叶片限定延迟压力 腔室和驱动旋转部件内部的前进压力室。 锁定构件被可滑动地容纳在叶片转子的叶片中并且布置成当叶片旋转到预定角度位置时与锁定孔接合。 锁定构件包括布置成接收相等的流体压力的前端部和后端部。 锁定构件还包括压力接收部分,选择性地施加工作流体压力以迫使锁定构件远离锁定孔。
    • 5. 发明申请
    • Control Valve Apparatus
    • 控制阀装置
    • US20110146602A1
    • 2011-06-23
    • US12973429
    • 2010-12-20
    • Hiroyuki KATO
    • Hiroyuki KATO
    • F01L1/34F01M1/02
    • F01L1/3442F01L2001/34423F01L2001/34453F01L2001/34469F01M9/10
    • In a hydraulic system equipped with a main flow passage for feeding oil to each of lubricated engine parts and a branch passage branched from the main flow passage, a control valve apparatus is provided for adjusting a flow rate of the oil flowing through a portion of the main flow passage downstream of the branched point. The control valve apparatus is configured to control the flow rate to a large flow-rate side of a variable flow-rate range, until a hydraulic pressure of the oil flowing through the main flow passage becomes greater than or equal to a predetermined pressure value after the engine has been started from its stopped state. The control valve apparatus is further configured to control the flow rate to a small flow-rate side of the variable flow-rate range, when the predetermined pressure value has been reached.
    • 在配备有用于向每个润滑的发动机部件供给油的主流路和从主流路分支的分支通路的液压系统中,设置有控制阀装置,用于调节流过所述主流路的一部分的油的流量 主流道在分支点下游。 控制阀装置被配置为控制可变流量范围的大流量侧的流量,直到流过主流路的油的液压压力大于或等于预定压力值,大于或等于预定压力值 发动机从停止状态开始。 控制阀装置还被配置为当达到预定压力值时,控制可变流量范围的小流量侧的流量。
    • 10. 发明申请
    • Manufacture method for ZnO based semiconductor crystal and light emitting device using same
    • 基于ZnO的半导体晶体的制造方法和使用它的发光器件
    • US20100181550A1
    • 2010-07-22
    • US12749401
    • 2010-03-29
    • Hiroshi KOTANIMichihiro SANOHiroyuki KATOAkio OGAWA
    • Hiroshi KOTANIMichihiro SANOHiroyuki KATOAkio OGAWA
    • H01L33/00
    • H01L21/02576H01L21/0237H01L21/02403H01L21/02433H01L21/02472H01L21/02554H01L21/02565H01L21/02579H01L21/02631H01L33/0083
    • A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
    • 一种氧化锌(ZnO)系半导体晶体的制造方法,其特征在于,提供具有Zn极性面的基板, 并且在所述衬底的Zn极性平面上使至少锌(Zn)和氧(O)反应,以在富锌条件下在所述衬底的Zn极性平面上生长ZnO基半导体晶体。 (a)在基板的Zn极性平面上形成n型ZnO缓冲层。 (b)在n型ZnO缓冲层的表面上形成n型ZnO层。 (c)在n型ZnO层的表面上形成n型ZnMgO层。 (d)通过交替层叠ZnO层和ZnMgO层,在n型ZnMgO层的表面上形成ZnO / ZnMgO量子阱层。 (e)在ZnO / ZnMgO量子阱层的表面上形成p型ZnMgO层。 (f)在p型ZnMgO层的表面上形成p型ZnO层。 (g)在n型ZnO层和p型ZnO层上形成电极。 在步骤(b),在富锌条件下形成n型ZnO层。