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    • 4. 发明授权
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US5348892A
    • 1994-09-20
    • US936837
    • 1992-08-28
    • Hiroyuki MiyakeTsutomu AbeHisao ItoHiroyuki HottaYasumoto ShimizuYoshihiko Sakai
    • Hiroyuki MiyakeTsutomu AbeHisao ItoHiroyuki HottaYasumoto ShimizuYoshihiko Sakai
    • H01L27/146H04N3/15H01L31/18
    • H04N3/1593H01L27/14643
    • An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
    • 一种具有光检测元件阵列的图像传感器,该受光元件阵列包括沿主扫描方向线性排列的多个块,每个块由多个光检测元件组成,多个开关元件用于传送每个块在光检测元件中产生的电荷,以及驱动IC 用于以图像信号的形式输出电荷。 在图像传感器中,光检测元件阵列的块中的开关元件和与前一块相邻的另一个块中的开关元件通过导线连接,使得块之间彼此最接近的开关元件互连 接下来的开关元件相互连接,等等。 从块中的开关元件连接到前块的两侧的块中的开关元件的配线相对于主扫描方向相对地设置,并且以这样的方式设置,使得连接开关元件的最短的线为 位于最接近光电检测元件阵列的位置,下一条短导线位于接近光电检测元件阵列的位置,依此类推。
    • 5. 发明授权
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US5182625A
    • 1993-01-26
    • US691517
    • 1991-04-25
    • Hiroyuki MiyakeTsutomu AbeHisao ItoHiroyuki HottaYasumoto ShimizuYoshihiko Sakai
    • Hiroyuki MiyakeTsutomu AbeHisao ItoHiroyuki HottaYasumoto ShimizuYoshihiko Sakai
    • H01L27/146H04N3/15
    • H04N3/1593H01L27/14643
    • An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disclosed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
    • 一种具有光检测元件阵列的图像传感器,该受光元件阵列包括沿主扫描方向线性排列的多个块,每个块由多个光检测元件组成,多个开关元件用于传送每个块在光检测元件中产生的电荷,以及驱动IC 用于以图像信号的形式输出电荷。 在图像传感器中,光检测元件阵列的块中的开关元件和与前一块相邻的另一个块中的开关元件通过导线连接,使得块之间彼此最接近的开关元件互连 接下来的开关元件相互连接,等等。 从块中的开关元件连接到前块的两侧的块中的开关元件的导线相对于主扫描方向相对地设置,并且以这样的方式公开,使得连接开关元件的最短导线为 位于最接近光电检测元件阵列的位置,下一条短导线位于接近光电检测元件阵列的位置,依此类推。
    • 7. 发明授权
    • Method of manufacturing image sensors
    • 图像传感器的制造方法
    • US5075244A
    • 1991-12-24
    • US578604
    • 1990-09-07
    • Yoshihiko SakaiTakehito Hikichi
    • Yoshihiko SakaiTakehito Hikichi
    • H04N1/028H01L21/336H01L21/768H01L21/84H01L27/146H01L29/45
    • H01L29/458H01L21/84H01L27/14643H01L29/66765
    • An image sensor manufacturing method, in which a chromium layer or the tantalum layer as barrier metal is formed on the semiconductor layer as the ohmic contact layer of the thin film transistor switching element (TFT). With use of the chromium layer or the tantalum layer, the semiconductor layers of an n.sup.+ hydrogenated amorphous silicon (n.sup.+ a-Si:H) can be protected when metal, e.g., aluminum, is vapor deposited or deposited by the sputtering method. Accordingly, the characteristic of the semiconductor layers can be kept intact, and consequently the reliability of the image sensor is improved. Further, when the chromium layer or the tantalum layer as barrier metal is formed, the lower electrode portion of the photo detect element is formed using the same layer, in the same photolithograph process. Accordingly, the manufacturing of image sensors is simpler than that of the same in which the photo detect elements and the TFTs are formed in different process steps.
    • 在半导体层上形成作为阻挡金属的铬层或钽层作为薄膜晶体管开关元件(TFT)的欧姆接触层的图像传感器的制造方法。 通过使用铬层或钽层,当通过溅射法气相沉积或沉积金属(例如铝)时,可以保护n +氢化非晶硅(n + a-Si:H)的半导体层。 因此,可以保持半导体层的特性,从而提高图像传感器的可靠性。 此外,当形成作为阻挡金属的铬层或钽层时,在相同的光刻工艺中,使用相同的层形成光检测元件的下电极部分。 因此,图像传感器的制造比在不同的工艺步骤中形成光检测元件和TFT的相同的制造方法更简单。