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1. 发明授权

US08497553B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08497553B2
公开(公告)日：2013-07-30
申请号：US12905801
申请日：2010-10-15
申请人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L23/62 , H01L29/66 , H01L31/06 , H01L21/338 , H02H3/00 , H02H9/02
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译：半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和第二保护元件欧姆电极。第二元件区域的面积小于第一元件区域。

2. 发明申请

US20110204807A1 TWO-WIRE AC SWITCH 有权
标题翻译：双线交流开关
公开(公告)号：US20110204807A1
公开(公告)日：2011-08-25
申请号：US13032297
申请日：2011-02-22
申请人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B41/16 , H03K17/56
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

3. 发明申请

US20110193171A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110193171A1
公开(公告)日：2011-08-11
申请号：US12905801
申请日：2010-10-15
申请人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L27/088
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译：半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和第二保护元件欧姆电极。第二元件区域的面积小于第一元件区域。

4. 发明授权

US08593068B2 Two-wire AC switch 有权
标题翻译：双线交流开关
公开(公告)号：US08593068B2
公开(公告)日：2013-11-26
申请号：US13032297
申请日：2011-02-22
申请人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B39/02
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

5. 发明授权

US08526207B2 Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch 有权
标题翻译：双向开关，交流二线开关，开关电源电路及双向开关驱动方式
公开(公告)号：US08526207B2
公开(公告)日：2013-09-03
申请号：US13158934
申请日：2011-06-13
申请人： Hiroto Yamagiwa , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
发明人： Hiroto Yamagiwa , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
IPC分类号： H02M7/02 , H03K17/94 , H03K17/687
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H03K17/6871 , H03K2017/6875 , H03K2217/0009
摘要： A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
摘要翻译：双向开关中的半导体器件101包括：第一电极109A，第二电极109B，第一栅电极112A和第二栅电极112B。在过渡期间：当第一电极109A的电位高于第二电极109B的电位时，将低于第一阈值电压的电压施加到第一栅电极112A，并且施加高于第二阈值电压施加到第二栅电极112B; 否则，将高于第一阈值电压的电压施加到第一栅电极，并且将低于第二阈值电压的电压施加到第二栅电极。

6. 发明授权

US08148752B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08148752B2
公开(公告)日：2012-04-03
申请号：US13021118
申请日：2011-02-04
申请人： Ayanori Ikoshi , Shingo Hashizume , Masahiro Hikita , Hiroto Yamagiwa , Manabu Yanagihara
发明人： Ayanori Ikoshi , Shingo Hashizume , Masahiro Hikita , Hiroto Yamagiwa , Manabu Yanagihara
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译：场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。源电极和漏电极形成在半导体堆叠上以便彼此分离。在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。在漏电极附近形成空穴注入部。空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。空穴注入电极和漏电极具有大致相同的电位。

7. 发明申请

US20110006340A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110006340A1
公开(公告)日：2011-01-13
申请号：US12886056
申请日：2010-09-20
申请人： Hiroto Yamagiwa , Takashi Saji , Saichiro Kaneko
发明人： Hiroto Yamagiwa , Takashi Saji , Saichiro Kaneko
IPC分类号： H01L29/739
CPC分类号： H01L29/7393
摘要： In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
摘要翻译：在高压半导体开关元件中，除了开关操作所需的第一发射极区域之外，通过电流检测装置中的检测电阻器与第一发射极区域电连接的第二发射极区域，并与形成电流检测装置。在第二发射极区域上不形成发射电极，而在与第二发射极区域相邻的基极区域的一部分上形成发射电极。

8. 发明授权

US08063418B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08063418B2
公开(公告)日：2011-11-22
申请号：US12886056
申请日：2010-09-20
申请人： Hiroto Yamagiwa , Takashi Saji , Saichiro Kaneko
发明人： Hiroto Yamagiwa , Takashi Saji , Saichiro Kaneko
IPC分类号： H01L29/739
CPC分类号： H01L29/7393
摘要： In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
摘要翻译：在高压半导体开关元件中，除了开关操作所需的第一发射极区域之外，通过电流检测装置中的检测电阻器与第一发射极区域电连接的第二发射极区域，并与形成电流检测装置。在第二发射极区域上不形成发射电极，而在与第二发射极区域相邻的基极区域的一部分上形成发射电极。

9. 发明授权

US07732833B2 High-voltage semiconductor switching element 失效
标题翻译：高压半导体开关元件
公开(公告)号：US07732833B2
公开(公告)日：2010-06-08
申请号：US12208615
申请日：2008-09-11
申请人： Hiroto Yamagiwa , Takashi Saji
发明人： Hiroto Yamagiwa , Takashi Saji
IPC分类号： H01L21/02
CPC分类号： H01L29/7393 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.
摘要翻译：在第一导电类型的基极区域中，选择性地形成与发射极区间隔开的至少一个第二导电类型的发射极区域和第二导电类型的至少一个感测区域。发射极区域和感测区域被定位成在与从第一导电类型的集电极区域垂直的第二方向的第二方向上排列，该第一方向形成为与基极区域分开形成，基地区。感测区域的宽度，发射极区域的宽度，与感测区域相邻的基极区域的一部分的宽度，以及与区域中的发射极区域相邻的基极区域的一部分的宽度第二方向被设置为使得感测比根据集电极电流的变化以期望的方式变化。

10. 发明申请

US20090085061A1 HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT 失效
标题翻译：高压半导体开关元件
公开(公告)号：US20090085061A1
公开(公告)日：2009-04-02
申请号：US12208615
申请日：2008-09-11
申请人： Hiroto Yamagiwa , Takashi Saji
发明人： Hiroto Yamagiwa , Takashi Saji
IPC分类号： H01L23/62 , H01L29/768
CPC分类号： H01L29/7393 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.
摘要翻译：在第一导电类型的基极区域中，选择性地形成与发射极区间隔开的至少一个第二导电类型的发射极区域和第二导电类型的至少一个感测区域。发射极区域和感测区域被定位成在与从第一导电类型的集电极区域垂直的第二方向的第二方向上排列，该第一方向形成为与基极区域分开形成，基地区。感测区域的宽度，发射极区域的宽度，与感测区域相邻的基极区域的一部分的宽度，以及与区域中的发射极区域相邻的基极区域的一部分的宽度第二方向被设置为使得感测比根据集电极电流的变化以期望的方式变化。

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