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1. 发明授权

US06365460B1 Production of silicon carbide bodies 失效
标题翻译：生产碳化硅体
公开(公告)号：US06365460B1
公开(公告)日：2002-04-02
申请号：US09460018
申请日：1999-12-13
申请人： Hirotake Yamada , Makoto Murai , Hiroshi Furukubo , Yasufumi Aihara , Tsuneaki Ohashi
发明人： Hirotake Yamada , Makoto Murai , Hiroshi Furukubo , Yasufumi Aihara , Tsuneaki Ohashi
IPC分类号： H01L2100
CPC分类号： C23C16/56 , C23C16/325
摘要： A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000° C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.
摘要翻译：一种生产碳化硅体的方法包括以下步骤：通过化学气相沉积法形成碳化硅块，并在真空或惰性气体气氛中在不低于2000℃的温度下对碳化硅块进行热处理，碳化硅制品的电阻率高于未被热处理的碳化硅块的电阻率。

2. 发明授权

US06479174B1 Silicon carbide body 失效
标题翻译：碳化硅体
公开(公告)号：US06479174B1
公开(公告)日：2002-11-12
申请号：US09543931
申请日：2000-04-06
申请人： Hirotake Yamada , Makoto Murai , Hiroshi Furukubo , Tsuneaki Ohashi
发明人： Hirotake Yamada , Makoto Murai , Hiroshi Furukubo , Tsuneaki Ohashi
IPC分类号： C25D32100
CPC分类号： C04B41/009 , C04B35/565 , C04B41/5059 , C04B41/87 , C04B2111/92 , C23C16/325 , Y10T428/25 , Y10T428/26 , Y10T428/30 , C04B41/4531 , C04B35/522
摘要： A silicon carbide body includes polycrystals of silicon carbide, and has a purity of silicon carbide of not less than 99.9999 wt %, a relative density of not less than 99% and a ratio of silicon of not less than 70.12 wt %.
摘要翻译：碳化硅体包括碳化硅的多晶体，并且具有不小于99.9999重量％的碳化硅的纯度，相对密度不小于99％，硅的比例不小于70.12重量％。

3. 发明授权

US06641941B2 Film of yttria-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation 有权
标题翻译：氧化钇 - 氧化铝复合氧化物的膜，其制造方法，喷涂膜，耐腐蚀构件和有效减少颗粒产生的构件
公开(公告)号：US06641941B2
公开(公告)日：2003-11-04
申请号：US10197037
申请日：2002-07-17
申请人： Hirotake Yamada , Tsuneaki Ohashi
发明人： Hirotake Yamada , Tsuneaki Ohashi
IPC分类号： B32B900
CPC分类号： C23C4/11 , Y10T428/249953 , Y10T428/25 , Y10T428/26
摘要： The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixture of powdery yttria and alumina materials is sprayed on a substrate to form a sprayed yttria-alumina complex oxide film. Preferably, the powdery yttria material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m, and the powdery alumina material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m. Preferably, the yttria-alumina complex oxide contains at least garnet phase, and may further contain perovskite phase.
摘要翻译：本发明提供了相对于基材具有高剥离强度的氧化钇 - 氧化铝复合氧化物膜。将粉末状氧化钇和氧化铝材料的混合物喷涂在基材上以形成喷涂的氧化钇 - 氧化铝复合氧化物膜。优选地，粉状氧化钇材料的平均粒径为百分之零点百分之一百至百分之一百，而粉末状氧化铝材料的平均粒径为百分之零点五至百毫米。优选地，氧化钇 - 氧化铝复合氧化物至少含有石榴石相，并且还可以含有钙钛矿相。

4. 发明授权

US06562183B1 Anti-corrosive parts for etching apparatus 有权
标题翻译：用于蚀刻装置的防腐蚀部件
公开(公告)号：US06562183B1
公开(公告)日：2003-05-13
申请号：US09543932
申请日：2000-04-06
申请人： Hirotake Yamada , Sadanori Shimura , Tsuneaki Ohashi
发明人： Hirotake Yamada , Sadanori Shimura , Tsuneaki Ohashi
IPC分类号： C01B3136
CPC分类号： C23C16/325 , Y10T428/30
摘要： To prevent an exposed surface of an anticorrosive part for an etching apparatus from being corroded, even when a highly corrosive etching gas such as a chlorine-based or fluorine-based plasma gas is used, an anticorrosive part for the etching apparatus for effecting etching treatment is provided. The anticorrosive part includes an anticorrosive part substrate, and a film of silicon carbide covering that surface of the anticorrosive part substrate which is to be exposed to an etching gas, wherein the silicon carbide film is made of polycrystals of silicon carbide having a 3C crystalline system, and (111) planes of the silicon carbide polycrystals are oriented in parallel to the surface of the silicon carbide film.
摘要翻译：为了防止蚀刻装置的防腐蚀部件的露出表面被腐蚀，即使使用诸如氯系或氟基等离子体气体的高腐蚀性蚀刻气体，也可以使用用于蚀刻处理的蚀刻装置的防腐蚀部件被提供。防腐蚀部件包括防腐蚀部件基板和覆盖要暴露于蚀刻气体的防腐蚀部件基板的表面的碳化硅膜，其中碳化硅膜由具有3C晶体系的碳化硅的多晶体制成，并且碳化硅多晶体的（111）面平行于碳化硅膜的表面取向。

5. 发明授权

US07138192B2 Film of yttria-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation 有权
标题翻译：氧化钇 - 氧化铝复合氧化物的膜，其制造方法，喷涂膜，耐腐蚀构件和有效减少颗粒产生的构件
公开(公告)号：US07138192B2
公开(公告)日：2006-11-21
申请号：US10633906
申请日：2003-08-04
申请人： Hirotake Yamada , Tsuneaki Ohashi
发明人： Hirotake Yamada , Tsuneaki Ohashi
IPC分类号： B32B9/00
CPC分类号： C23C4/11 , Y10T428/249953 , Y10T428/25 , Y10T428/26
摘要： The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 μm and not larger than 100 μm, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 μm and not larger than 100 μm. Preferably, the yttria-alumina complex oxide contains at least a garnet phase, and may further contain a perovskite phase.
摘要翻译：本发明提供了相对于基材具有高剥离强度的氧化钇 - 氧化铝复合氧化物膜。将氧化钇和氧化铝的粉末状材料的混合粉末喷涂在基材上以形成由氧化钇 - 氧化铝复合氧化物制成的喷涂膜。优选地，氧化钇的粉末状材料具有不小于0.1μm和不大于100μm的50％平均粒径，并且氧化铝的粉末材料具有不小于0.1μm的平均粒径的50％且不大于 100个妈妈优选地，氧化钇 - 氧化铝复合氧化物至少含有石榴石相，并且还可以含有钙钛矿相。

6. 发明授权

US06783875B2 Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members 有权
标题翻译：卤素气体等离子体构件及其制造方法，层压板和耐腐蚀构件
公开(公告)号：US06783875B2
公开(公告)日：2004-08-31
申请号：US09835857
申请日：2001-04-16
申请人： Hirotake Yamada , Yuji Katsuda , Tsuneaki Ohashi , Masaaki Masuda , Masashi Harada , Hiroyuki Iwasaki , Shigenori Ito
发明人： Hirotake Yamada , Yuji Katsuda , Tsuneaki Ohashi , Masaaki Masuda , Masashi Harada , Hiroyuki Iwasaki , Shigenori Ito
IPC分类号： B32B904
CPC分类号： C04B41/009 , B32B18/00 , C04B35/63 , C04B35/63416 , C04B35/63424 , C04B35/6365 , C04B37/005 , C04B41/5045 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2111/00405 , C04B2111/20 , C04B2235/656 , C04B2235/6567 , C04B2237/34 , C04B2237/343 , C04B2237/348 , C04B2237/52 , C04B2237/704 , C04B2237/708 , C23C4/00 , C23C4/18 , C23C16/40 , C23C16/4404 , C23C24/08 , C23C26/00 , C23C30/00 , Y10T428/249953 , Y10T428/26 , Y10T428/263 , C04B41/0072 , C04B41/4527 , C04B41/5031 , C04B41/4556 , C04B41/5032 , C04B41/522 , C04B41/5011 , C04B35/10 , C04B35/48 , C04B38/00
摘要： A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, includes a main body of said member, and a corrosion-resistant film formed at least a surface of said main body, wherein a peeling resistance of the corrosive film to said main body is not less than 15 MPa.
摘要翻译：要暴露于卤素气体等离子体的卤素等离子体的构件包括所述构件的主体，以及形成在所述主体的至少表面上的耐腐蚀膜，其中所述腐蚀性膜对所述主体不低于15MPa。

7. 发明授权

US06617059B1 Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film 有权
标题翻译：在氮化铝，薄膜结构和碳化硅膜上形成碳化硅膜的方法
公开(公告)号：US06617059B1
公开(公告)日：2003-09-09
申请号：US09819933
申请日：2001-03-28
申请人： Hiroshi Furukubo , Hirotake Yamada , Hiromichi Kobayashi
发明人： Hiroshi Furukubo , Hirotake Yamada , Hiromichi Kobayashi
IPC分类号： B32B904
CPC分类号： C04B41/009 , B32B15/01 , C04B41/5059 , C23C16/0254 , C23C16/325 , Y10T428/24777 , C04B41/4531 , C04B35/581
摘要： A film structure including a silicon carbide film formed on a surface of an aluminum nitride substrate. The substrate has a first base plane, a second base plane positioned downward with respect to the first base plane and a step plane arranged in an intersecting direction between the first base plane and the second base plane. One or more chamfered planes are arranged between the first base plane and the step plane so as to form a plurality of corner portions each having an angle larger than 130°. Alternatively, at least one round portion having a curvature radium of larger than 0.05 mm is arranged between the first base plane and the step plane.
摘要翻译：一种膜结构，包括在氮化铝衬底的表面上形成的碳化硅膜。基板具有第一基面，相对于第一基面向下定位的第二基面和沿第一基面和第二基面之间的交叉方向配置的台阶面。一个或多个倒角平面布置在第一基面和台阶之间，以便形成多个角度，每个角部均具有大于130°的角度。或者，具有大于0.05mm的曲率半径的至少一个圆形部分布置在第一基面和台阶平面之间。

8. 发明申请

US20070225149A1 Ceramic Porous Body And Method For Producing Molded Body 有权
标题翻译：陶瓷多孔体及其制造方法
公开(公告)号：US20070225149A1
公开(公告)日：2007-09-27
申请号：US10593331
申请日：2005-03-24
申请人： Shinzou Hayashi , Hiroyuki Suenobu , Hirotake Yamada , Yasushi Noguchi
发明人： Shinzou Hayashi , Hiroyuki Suenobu , Hirotake Yamada , Yasushi Noguchi
IPC分类号： C04B38/00 , C04B35/195 , C04B35/64
CPC分类号： C04B38/06 , C04B35/195 , C04B35/6263 , C04B38/0006 , C04B38/08 , C04B2111/00793 , C04B2111/0081 , C04B2235/3217 , C04B2235/3218 , C04B2235/3418 , C04B2235/3445 , C04B2235/349 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/77 , C04B33/13 , C04B40/0268 , C04B35/14 , C04B38/0051
摘要： A ceramic porous body including at least Si as a chemical component, the ceramic porous body being obtained by adding a porous silica powder or a porous silica-containing compound powder to a forming raw material to prepare a clay, forming the resulting ceramic clay into a specific shape, and firing the formed product. The ceramic porous body according to the present invention does not produce carbon dioxide or toxic gas during firing and allows the firing time to be reduced in comparison with the case of using a resin powder or a carbon powder as a pore-forming agent by using the porous silica powder or the porous silica-containing compound powder as the pore-forming agent during production. Moreover, a change in pore-forming characteristics or deformation of a formed product rarely occurs.
摘要翻译：一种陶瓷多孔体，其至少包含Si作为化学成分，所述陶瓷多孔体通过向成形原料中添加多孔二氧化硅粉末或多孔二氧化硅的化合物粉末而制备粘土而获得，将所得陶瓷粘土形成为特定形状，并焙烧形成的产品。根据本发明的陶瓷多孔体在烧成时不产生二氧化碳或有毒气体，与使用树脂粉末或碳粉末作为成孔剂的情况相比，可以减少烧成时间，多孔二氧化硅粉末或多孔二氧化硅复合粉末作为生产中的成孔剂。此外，很少发生形成产品的成孔特性或变形的变化。

9. 发明授权

US5281490A Process for producing solid oxide fuel cells 失效
标题翻译：固体氧化物燃料电池的制造方法
公开(公告)号：US5281490A
公开(公告)日：1994-01-25
申请号：US3029
申请日：1993-01-11
申请人： Masao Nishioka , Hirotake Yamada
发明人： Masao Nishioka , Hirotake Yamada
IPC分类号： H01M8/02 , H01M8/12
CPC分类号： H01M4/9033
摘要： A process is disclosed for producing a solid oxide fuel cell including a solid electrolyte plate, and an air electrode and a fuel electrode provided on opposite surfaces of said solid electrolyte plate. The process comprising the step of joining a film of oxygen ion-conductive zirconia as the solid electrolyte plate to lanthanum manganate as the air electrode through a layer containing a compound selected from a manganese compound and a cobalt compound by press contacting them under heating.
摘要翻译：公开了一种制造固体氧化物燃料电池的方法，其包括固体电解质板，以及设置在所述固体电解质板的相对表面上的空气电极和燃料电极。该方法包括将作为固体电解质板的氧离子传导性氧化锆的膜作为空气电极通过包含选自锰化合物和钴化合物的化合物的层在加热下进行压接而接合的步骤。

10. 发明授权

US5158837A Solid oxide fuel cells 失效
标题翻译：固体氧化物燃料电池
公开(公告)号：US5158837A
公开(公告)日：1992-10-27
申请号：US651799
申请日：1991-02-07
申请人： Hidenobu Misawa , Hirotake Yamada
发明人： Hidenobu Misawa , Hirotake Yamada
IPC分类号： H01M8/12 , H01M8/24
CPC分类号： H01M8/243 , H01M8/1231
摘要： A solid oxide fuel cell including a bottomprovided cylindrical solid oxide fuel cell element including at least an air electrode, a solid electrolyte and a fuel electrode, a gas feed pipe inserted into a cylindrical space and having a gas feeding portion for feeding an oxidizing gas or a fuel gas into the cylindrical space of the solid oxide fuel cell element. The gas feeding portion is provided at least in a lateral face of the gas feed pipe. Instead of or in addition to the gas feeding portion being provided in the lateral face of the gas feed pipe, a permeating amount of the gas passing through that portion of the porous cylindrical support tube which faces an upstream side of a stream of the gas flowing through the cylindrical space is made smaller than that of the gas passing through that portion of the porous cylindrical support tube which faces a downstream side of the gas stream.

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