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    • 1. 发明授权
    • SiC semiconductor element and manufacturing method for same
    • SiC半导体元件及其制造方法
    • US08546815B2
    • 2013-10-01
    • US13516054
    • 2010-12-13
    • Hiroshi YanoDai Okamoto
    • Hiroshi YanoDai Okamoto
    • H01L31/0312
    • H01L29/7802H01L21/049H01L29/1608H01L29/51H01L29/518H01L29/6606H01L29/66068H01L29/78H01L29/94
    • Disclosed are an SiC semiconductor element and manufacturing method for an SiC semiconductor element in which the interface state density of the interface of the insulating film and the SiC is reduced, and channel mobility is improved. Phosphorus (30) is added to an insulating film (20) formed on an SiC semiconductor (10) substrate in a semiconductor element. The addition of phosphorous to the insulating film makes it possible to significantly reduce the defects (interface state density) in the interface (21) of the insulating film and the SiC, and to dramatically improve the channel mobility when compared with conventional SiC semiconductor elements. The addition of phosphorus to the insulating film is carried out by heat treatment. The use of heat treatment to add phosphorous to the insulating film makes it possible to maintain the reliability of the insulating film, and to avoid variation in channel mobility and threshold voltage.
    • 公开了一种SiC半导体元件及其制造方法,其中绝缘膜和SiC的界面的界面态密度降低,并提高了沟道迁移率。 向半导体元件中的形成在SiC半导体(10)基板上的绝缘膜(20)添加磷(30)。 通过向绝缘膜添加磷,可以显着降低绝缘膜和SiC的界面(21)中的缺陷(界面态密度),并且与传统的SiC半导体元件相比显着提高沟道迁移率。 通过热处理对绝缘膜添加磷。 使用热处理将磷添加到绝缘膜使得可以保持绝缘膜的可靠性,并且避免沟道迁移率和阈值电压的变化。
    • 2. 发明授权
    • Resin cage for angular contact ball bearing
    • 角接触球轴承用树脂笼
    • US08480305B2
    • 2013-07-09
    • US13322693
    • 2010-06-21
    • Masaki MaedaTsuyoshi OkumuraHiroshi Yano
    • Masaki MaedaTsuyoshi OkumuraHiroshi Yano
    • F16C33/38
    • F16C33/418F16C19/163F16C33/416F16C2240/44F16C2240/80
    • A cage has a ring portion, and a plurality of column portions that protrude from the ring portion, that are arranged in the circumference direction. Each column portion has a column portion radially inward section that forms a bearing-radial-direction inward side portion, and a column portion radially outward section that is connected to the radially inward section at its radially outer end position, so as to protrude on both sides in the circumferential direction from the radially inward section. A connection position at which the radially outward section is connected to the radially inward section is adjusted to a position radially outward of a pitch circle position of the plurality of the balls that are held in the respective pockets. Thus, the thickness of the radially inward section at the connection position is larger than the thickness of the radially inward section at the pitch circle position.
    • 保持架具有环形部分,以及沿圆周方向布置的从环形部分突出的多个柱部分。 每个列部分具有形成轴承 - 径向内侧部分的柱部分径向向内部分,以及在其径向外端位置处连接到径向向内部分的柱部径向外侧部分,以便在两个 从径向向内的部分在圆周方向上。 将径向向外部分连接到径向向内部分的连接位置被调节到保持在各个口袋中的多个球的节圆位置的径向外侧的位置。 因此,连接位置处的径向向内部分的厚度大于节圆位置处的径向向内部分的厚度。
    • 3. 发明授权
    • Three-dimensional measurement instrument, image pick-up apparatus and adjusting method for such an image pickup apparatus
    • 用于这种图像拾取装置的三维测量仪器,图像拾取装置和调节方法
    • US08340355B2
    • 2012-12-25
    • US12234187
    • 2008-09-19
    • Hiroshi YanoShiro FujiedaYasuyuki Ikeda
    • Hiroshi YanoShiro FujiedaYasuyuki Ikeda
    • G06K9/00
    • H04N5/247H04N13/239H04N13/246
    • An image pickup apparatus is provided with cameras and string-shaped members. The user is allowed to know working distances based upon the lengths of the string-shaped members. The optical axis direction of the camera is adjusted so that the leading edge of the string-shaped member is included in the viewing field of the camera, and the optical axis direction of the camera is adjusted so that the leading edge of the string-shaped member is included in the viewing field of the camera. Even in the case when no image-pickup object is present, by presuming the position of the image-pickup portion of the object, the working distance from the presumed position can be found by the string-shaped member. Moreover, since the string-shaped members are coupled to each other at the image-pickup position, the directions of the optical axes of the cameras can be determined based upon the extending directions of the string members.
    • 图像拾取装置具有相机和线状部件。 允许使用者基于弦状构件的长度知道工作距离。 调整照相机的光轴方向,使得串联构件的前缘被包括在照相机的视野中,并且相机的光轴方向被调节为使得弦状构件的前缘 成员被包括在相机的视野中。 即使在不存在图像拾取对象的情况下,通过假设对象的图像拾取部分的位置,可以通过线状构件找到与推定位置的工作距离。 此外,由于串形构件在图像拾取位置处彼此联接,所以可以基于弦构件的延伸方向来确定摄像机的光轴的方向。
    • 4. 发明申请
    • SIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME
    • SIC半导体元件及其制造方法
    • US20120241767A1
    • 2012-09-27
    • US13516054
    • 2010-12-13
    • Hiroshi YanoDai Okamoto
    • Hiroshi YanoDai Okamoto
    • H01L29/38H01L21/265
    • H01L29/7802H01L21/049H01L29/1608H01L29/51H01L29/518H01L29/6606H01L29/66068H01L29/78H01L29/94
    • Disclosed are an SiC semiconductor element and manufacturing method for an SiC semiconductor element in which the interface state density of the interface of the insulating film and the SiC is reduced, and channel mobility is improved. Phosphorus (30) is added to an insulating film (20) formed on an SiC semiconductor (10) substrate in a semiconductor element. The addition of phosphorous to the insulating film makes it possible to significantly reduce the defects (interface state density) in the interface (21) of the insulating film and the SiC, and to dramatically improve the channel mobility when compared with conventional SiC semiconductor elements. The addition of phosphorus to the insulating film is carried out by heat treatment. The use of heat treatment to add phosphorous to the insulating film makes it possible to maintain the reliability of the insulating film, and to avoid variation in channel mobility and threshold voltage.
    • 公开了一种SiC半导体元件及其制造方法,其中绝缘膜和SiC的界面的界面态密度降低,并提高了沟道迁移率。 向半导体元件中的形成在SiC半导体(10)基板上的绝缘膜(20)添加磷(30)。 通过向绝缘膜添加磷,可以显着降低绝缘膜和SiC的界面(21)中的缺陷(界面态密度),并且与传统的SiC半导体元件相比显着提高沟道迁移率。 通过热处理对绝缘膜添加磷。 使用热处理将磷添加到绝缘膜使得可以保持绝缘膜的可靠性,并且避免沟道迁移率和阈值电压的变化。
    • 5. 发明授权
    • Method for deriving parameter for three-dimensional measurement processing and three-dimensional visual sensor
    • 用于导出三维测量处理参数和三维视觉传感器的方法
    • US08208718B2
    • 2012-06-26
    • US12711179
    • 2010-02-23
    • Shiro FujiedaAtsushi TanenoHiroshi YanoYasuyuki Ikeda
    • Shiro FujiedaAtsushi TanenoHiroshi YanoYasuyuki Ikeda
    • G06K9/00
    • G06K9/00214G06T7/60G06T2207/10012G06T2207/30164
    • In the present invention, processing for setting a parameter expressing a measurement condition of three-dimensional measurement to a value necessary to output a proper recognition result is easily performed. The three-dimensional measurement is performed to stereo images of real models WM1 and WM2 of a workpiece using a measurement parameter set by a user, and positions and attitudes of the workpiece models WM1 and WM2 are recognized based on the measurement result. An image expressing the recognition result is displayed, and numerical data indicating the selected recognition result is set to sample data in response to a user manipulation for selecting the recognition result. A setting value of the measurement parameter is changed every time in a predetermined numerical range, the three-dimensional measurement and recognition processing are performed using the setting measurement parameter, and a numerical range of the setting parameter is set to an acceptable range when the recognition result in which an amount of difference with sample data falls within a predetermined value is obtained. An intermediate value of the acceptable range is fixed and registered as an optimum value of the parameter.
    • 在本发明中,容易进行用于将表示三维测量的测量条件的参数设置为输出适当的识别结果所需的值的处理。 使用由用户设置的测量参数对工件的实际模型WM1和WM2的立体图像进行三维测量,并且基于测量结果识别工件模型WM1和WM2的位置和姿态。 显示表示识别结果的图像,并且响应于用于选择识别结果的用户操作,将指示所选择的识别结果的数值数据设置为采样数据。 在规定的数值范围内,每次改变测定参数的设定值,使用设定测定参数进行三维测定和识别处理,将该设定参数的数值范围设定为可以接受的范围 导致与采样数据的差异量落在预定值内的结果。 可接受范围的中间值是固定的,并被注册为参数的最佳值。
    • 6. 发明申请
    • METHOD AND SYSTEM FOR PURIFYING SILICON
    • 用于净化硅的方法和系统
    • US20120097523A1
    • 2012-04-26
    • US13266631
    • 2010-04-27
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • C01B33/037B01J19/08
    • C01B33/037
    • [Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon.[Means to Solve]After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.
    • [对象]提高生产率,降低冶金级纯硅原料的高纯度硅制造中的热能消耗。 [解决方法]在室内的原料硅中,通过水蒸汽添加等离子体电弧加热或低压氧等离子体电弧加热进行第一次处理之后,将原料硅置于高温 从而通过蒸发氧化和除去硼,或通过电子束照射除去磷,从而将原料硅置于高温熔融状态,从而通过在适于处理的气氛中蒸发除去磷; 然后将室的气氛变成适合于剩余的第二处理的真空气氛,同时将包含在炉床中的硅保持在其熔融状态,并且进行第二净化处理; 然后通过单向凝结法切断富集杂质的末端,得到高度无磷,硼等杂质的高纯度精制硅锭。