专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060218431A1 Image forming apparatus and communication data handling method therein 失效
标题翻译：图像形成装置及其中的通信数据处理方法
公开(公告)号：US20060218431A1
公开(公告)日：2006-09-28
申请号：US11387148
申请日：2006-03-21
申请人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
发明人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
IPC分类号： G06F11/00
CPC分类号： G06F11/1443 , G03G15/0855 , G03G15/0863 , G03G15/0865 , G03G21/1882 , G03G2215/0697 , G06F11/004
摘要： The present invention aims at avoiding a hung-up in the case where a command is sent from a controller within a printer but there is no response to the command from the unit side within the printer, due to a faulty communication or the like, and also in the case where a noise is introduced in the communication data. In the present invention, based on a command sent to the unit side, a data amount of a response from the unit side to this command is predicted, and also a threshold value of response time is provided (S21), which is the time when from the command is sent until the time when the response is received. After the command is sent (S23) until the threshold value of the response time elapses, the receive data is sequentially stored in the receive buffer up to when the data amount from the unit side reaches the predicted data amount (S28, 32, 34). If the data amount from the unit side does not reach the predicted amount even after the lapse of threshold value of the response time, an error processing is executed (S43, 45, 47).
摘要翻译：本发明的目的是避免在打印机内从控制器发出命令的情况下，由于通信不正常等原因，不能响应打印机内的单元侧的命令，以及在通信数据中引入了噪声的情况下也是如此。在本发明中，基于发送到单元侧的命令，预测从单元侧到该命令的响应的数据量，并且还提供响应时间的阈值（S21），这是时间当命令发送到接收到响应的时候。在命令发送（S23）直到响应时间的阈值过去之后，接收数据被顺序地存储在接收缓冲器中，直到来自单元侧的数据量达到预测数据量（S 28,32， 34）。如果即使经过了响应时间的阈值之后，从单元侧的数据量也未达到预测量，则执行错误处理（S43,45,47）。

2. 发明授权

US07461300B2 Image forming apparatus and communication data handling method therein 失效
标题翻译：图像形成装置及其中的通信数据处理方法
公开(公告)号：US07461300B2
公开(公告)日：2008-12-02
申请号：US11387148
申请日：2006-03-21
申请人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
发明人： Hiroshi Tanaka , Kanehiro Machiya , Hironori Sakaguchi , Koji Matsubara , Kazuhiro Nakamura
IPC分类号： G06F11/00
CPC分类号： G06F11/1443 , G03G15/0855 , G03G15/0863 , G03G15/0865 , G03G21/1882 , G03G2215/0697 , G06F11/004
摘要： The present invention aims at avoiding a hung-up in the case where a command is sent from a controller within a printer but there is no response to the command from the unit side within the printer, due to a faulty communication or the like, and also in the case where a noise is introduced in the communication data. In the present invention, based on a command sent to the unit side, a data amount of a response from the unit side to this command is predicted, and also a threshold value of response time is provided (S21), which is the time when from the command is sent until the time when the response is received. After the command is sent (S23) until the threshold value of the response time elapses, the receive data is sequentially stored in the receive buffer up to when the data amount from the unit side reaches the predicted data amount (S28, 32, 34). If the data amount from the unit side does not reach the predicted amount even after the lapse of threshold value of the response time, an error processing is executed (S43, 45, 47).
摘要翻译：本发明的目的是避免在打印机内从控制器发出命令的情况下，由于通信不正常等原因，不能响应打印机内的单元侧的命令，以及在通信数据中引入了噪声的情况下也是如此。在本发明中，基于发送到单元侧的命令，预测从单元侧到该命令的响应的数据量，并且还提供响应时间的阈值（S21），这是时间从命令发送到接收响应的时间。在命令发送（S23）直到响应时间的阈值过去之后，接收数据被顺序地存储在接收缓冲器中，直到来自单元侧的数据量达到预测数据量（S28,32,34）。如果即使经过了响应时间的阈值之后，从单元侧的数据量也未达到预测量，则执行错误处理（S43,45,47）。

3. 发明授权

US08012546B2 Method and apparatus for producing semiconductor films and related devices 有权
标题翻译：用于制造半导体膜及相关器件的方法和装置
公开(公告)号：US08012546B2
公开(公告)日：2011-09-06
申请号：US11843936
申请日：2007-08-23
申请人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
发明人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
IPC分类号： H05H1/24
CPC分类号： H01L31/072 , C23C14/0026 , C23C14/0623 , C23C14/243 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.
摘要翻译：一种具有包括Ib族元素，IIIb族元素和包含硒的VIb族元素的黄铜矿结构的半导体膜的半导体膜的制造方法，其包括用等离子体裂解硒以产生自由基硒的方法，以及在使用过程中使用自由基硒形成半导体膜。

4. 发明授权

US06649434B2 Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer 失效
公开(公告)号：US06649434B2
公开(公告)日：2003-11-18
申请号：US09950831
申请日：2001-09-13
申请人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2120
CPC分类号： H01L33/0087 , C30B23/02 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.

5. 发明授权

US06638846B2 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device 失效
公开(公告)号：US06638846B2
公开(公告)日：2003-10-28
申请号：US09950830
申请日：2001-09-13
申请人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Koji Matsubara , Akimasa Yamada , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2144
CPC分类号： H01L33/0087 , C30B23/02 , C30B29/16
摘要： A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.

6. 发明授权

US06857982B2 Limited slip differential 失效
标题翻译：有限滑差
公开(公告)号：US06857982B2
公开(公告)日：2005-02-22
申请号：US10242871
申请日：2002-09-13
申请人： Tatsuhiro Tomari , Yutaka Tashiro , Akihiro Iwazaki , Koji Matsubara , Shinji Ohkuma , Shinichi Inagawa , Yasuji Shibahata
发明人： Tatsuhiro Tomari , Yutaka Tashiro , Akihiro Iwazaki , Koji Matsubara , Shinji Ohkuma , Shinichi Inagawa , Yasuji Shibahata
IPC分类号： F16H48/06 , F16H48/08 , F16H48/22 , F16H48/30 , F16H48/38 , F16H48/20
CPC分类号： F16H48/30 , F16H48/08 , F16H48/22 , F16H48/34 , F16H48/40 , F16H2048/082 , F16H2048/085 , F16H2048/087 , F16H2048/346 , F16H2048/385
摘要： A differential with a differential action limiting mechanism includes a differential mechanism D for distributing the drive force of an internal combustion engine inputted into a differential case 28 to a left-hand axle shaft 13 and a half shaft 11 which continuously connects to a right-hand axle shaft for output therefrom and friction clutches 44L, 44R for limiting differential rotations of the left-hand axle shaft 13 and the half shaft 11 relative to the differential case 28. An actuator A for generating an engagement force for bringing the friction clutches 44L, 44R into engagement is provided outside a housing 14 for accommodating therein the differential case 28, whereby an engagement force generated by the actuator A is transmitted to the friction clutches 44L, 44R via the half shaft 11.
摘要翻译：具有差速动作限制机构的差速器包括用于将输入到差速器壳体28的内燃机的驱动力分配到左侧车轴13的差速机构D和连续地连接到右侧的左轴的半轴11 用于从其输出的车轴和摩擦离合器44L，44R，用于限制左侧车轴13和半轴11相对于差速器箱28的差速旋转。用于产生用于使摩擦离合器44L， 44R设置在壳体14的外部，用于容纳差速器壳体28，由此由致动器A产生的接合力经由半轴11传递到摩擦离合器44L，44R。

7. 发明授权

US06837821B2 Differential 失效
标题翻译：微分
公开(公告)号：US06837821B2
公开(公告)日：2005-01-04
申请号：US10437215
申请日：2003-05-13
申请人： Masao Teraoka , Tatsuhiro Tomari , Akihiro Iwazaki , Koji Matsubara , Yutaka Tashiro
发明人： Masao Teraoka , Tatsuhiro Tomari , Akihiro Iwazaki , Koji Matsubara , Yutaka Tashiro
IPC分类号： F16D27/115 , F16H48/08 , F16H48/22 , F16H48/38 , F16H48/20
CPC分类号： F16H48/22 , F16H48/30 , F16H48/34 , F16H2048/201 , F16H2048/204 , F16H2048/346 , Y10T74/19
摘要： The differential includes a differential casing configured to be rotatably driven by a motor under a driving force. The differential includes a differential mechanism which includes a pair of first and second side-gears for distributing a torque of the differential casing to first and second output shafts. The differential includes a frictional clutch for interconnecting the first and second output shafts. The frictional clutch includes first and second power-transmitting members connected to first and second output shafts respectively and first and second clutch plates. The first and second clutch plates are connected to the first and second power-transmitting members respectively. The differential includes an actuator for operating the frictional clutch. One output shaft of the first and second output shafts is axially displacable by the actuator under an engagement force to engage the frictional clutch.
摘要翻译：差速器包括构造成在驱动力下由电动机可旋转地驱动的差速器壳体。差速器包括差动机构，其包括用于将差速器壳体的扭矩分配到第一和第二输出轴的一对第一和第二侧齿轮。差速器包括用于互连第一和第二输出轴的摩擦离合器。摩擦离合器包括分别连接到第一和第二输出轴的第一和第二动力传递部件以及第一和第二离合器片。第一和第二离合器片分别连接到第一和第二动力传递构件。差速器包括用于操作摩擦离合器的致动器。第一和第二输出轴的一个输出轴在啮合力的作用下可由致动器轴向置换，从而啮合摩擦离合器。

8. 发明授权

US06383408B1 Piezoelectric ceramic and surface wave device using the same 有权
标题翻译：压电陶瓷和表面波器件使用相同
公开(公告)号：US06383408B1
公开(公告)日：2002-05-07
申请号：US09676995
申请日：2000-09-29
申请人： Katsuhiro Horikawa , Koji Matsubara
发明人： Katsuhiro Horikawa , Koji Matsubara
IPC分类号： H01B312
CPC分类号： H03H3/08 , C04B35/493 , H01L41/187 , H03H9/02543
摘要： A piezoelectric ceramic is provided which has a very low loss and superior workability in micro-fabrication. The piezoelectric ceramic contains at least Pb, Mn, Nb, Ti and Zr as primary metal components, in which, when the composition of the piezoelectric ceramic is represented by the formula Pbx{(MnaNbb)yTizZr(1−Y−z)}O3, the x, y, z, a, and b are, on a molar basis, such that 0.95≦x≦0.995, 0.055≦y≦0.10, 0.40≦z≦0.55, 2.01≦b/a≦2.40, and a+b=1. In addition, the average grain diameter of the sintered piezoelectric ceramic is about 2 &mgr;m or less.
摘要翻译：提供了一种压电陶瓷，其在微制造中具有非常低的损耗和优异的可加工性。压电陶瓷至少含有Pb，Mn，Nb，Ti和Zr作为主要金属成分，其中当压电陶瓷的组成由式Pbx {（MnaNbb）yTizZr（1-Yz）} O3）表示时， x，y，z，a和b以摩尔为基准，使得0.95 <= x <= 0.995,0.055 <= y <= 0.10,0. 0.40 <= z <= 0.55,2.01 <= b / = 2.40，a + b = 1。另外，烧结压电陶瓷的平均粒径为2μm以下。

9. 发明授权

US08304804B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08304804B2
公开(公告)日：2012-11-06
申请号：US12601248
申请日：2008-05-13
申请人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
发明人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
IPC分类号： H01L33/00
CPC分类号： H01L33/28
摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x
摘要翻译：本发明的目的在于提高ZnO系光半导体装置的发光效率。光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

10. 发明申请

US20050284518A1 Compound solar cell and process for producing the same 审中-公开
标题翻译：复合太阳能电池及其制造方法
公开(公告)号：US20050284518A1
公开(公告)日：2005-12-29
申请号：US11159233
申请日：2005-06-23
申请人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
发明人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0749 , Y02E10/541
摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.
摘要翻译：一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式