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1. 发明申请

US20080260985A1 Information-recording medium 审中-公开
标题翻译：信息记录介质
公开(公告)号：US20080260985A1
公开(公告)日：2008-10-23
申请号：US12068531
申请日：2008-02-07
申请人： Hiroshi Shirai , Kazuyoshi Adachi , Osamu Ishizaki , Tsuyoshi Onuma
发明人： Hiroshi Shirai , Kazuyoshi Adachi , Osamu Ishizaki , Tsuyoshi Onuma
IPC分类号： G11B7/24
CPC分类号： G11B7/24038 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： An information-recording medium includes first and second recording layers each of which is formed of a phase-change material containing Bi, Ge, and Te, wherein the first recording layer is arranged nearer to a light-incident side of the laser beam than the second recording layer; a composition of Bi, Ge, and Te contained in the second recording layer is within a composition range surrounded by composition points B2, C2, D2, D6, C6, and B6 on a triangular composition diagram of Bi, Ge, and Te; and a difference (α−δ) between a composition α of Bi in the first recording layer and a composition δ of Bi in the second recording layer is −1.0 to 3.0 at. %. Thus, there is provided a two-layered information-recording medium with high recording-data reliability and excellent repeated-data recording durability.
摘要翻译：信息记录介质包括第一和第二记录层，每个记录层由包含Bi，Ge和Te的相变材料形成，其中第一记录层被布置成比激光束的光入射侧更靠近激光束的光入射侧第二记录层; 包含在第二记录层中的Bi，Ge和Te的组成在组成点B 2，C 2，D 2，D 6，C 6和B 6的组成范围内，Bi的三角形组成图上， Ge，Te; 并且第一记录层中Bi的组成α和第二记录层中Bi的组成δ之差（α-δ）为-1.0至3.0at。％。因此，提供了具有高记录数据可靠性和优异的重复数据记录耐久性的双层信息记录介质。

2. 发明授权

US07033659B2 Optical information recording medium and method of recording and reproducing information on and from optical information recording medium 失效
标题翻译：光信息记录介质以及在光信息记录介质上记录和再现信息的方法
公开(公告)号：US07033659B2
公开(公告)日：2006-04-25
申请号：US10736712
申请日：2003-12-17
申请人： Hiroshi Shirai , Reiji Tamura , Kazuyo Umezawa , Makoto Iimura , Akira Kashiwakura , Kazuyoshi Adachi
发明人： Hiroshi Shirai , Reiji Tamura , Kazuyo Umezawa , Makoto Iimura , Akira Kashiwakura , Kazuyoshi Adachi
IPC分类号： B32B3/02
CPC分类号： G11B7/00454 , G11B7/242 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2535 , G11B7/2536 , G11B7/2542 , G11B7/2578 , G11B7/2585 , G11B7/259 , G11B7/2595 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/25713 , G11B2007/25715 , Y10T428/21
摘要： A write-once optical information recording medium is provided that is capable of realizing a high transfer rate and a method of recording and reproducing information on and from the optical information recording medium. The optical information recording medium is constructed by stacking a reflective layer 12, a first dielectric layer 13, a recording layer 14, a write-protect layer 15, a second dielectric layer 16 and a transparent cover layer 17 on a polycarbonate substrate 11. The recording layer 14 is made of a phase-change material, and the cover layer 17 is made of UV curing resin. The recording layer 14 is irradiated with a laser beam with a wavelength of 500 nm or less to change from a crystalline phase to an amorphous phase. The write-protect layer 15 prevents the recording layer 14 from changing back to the crystalline phase from the amorphous phase, formed by the phase change.
摘要翻译：提供了能够实现高传输速率的一次写入光信息记录介质以及在光信息记录介质上记录和再现信息的方法。光学信息记录介质通过在聚碳酸酯基板11上堆叠反射层12，第一介电层13，记录层14，写保护层15，第二介电层16和透明覆盖层17而构成。记录层14由相变材料制成，并且覆盖层17由UV固化树脂制成。用波长为500nm以下的激光束照射记录层14，从结晶相向非晶相变化。写保护层15防止记录层14从由相变形成的非晶相转变回结晶相。

3. 发明授权

US07505392B2 Optical disk with a plurality of radially extending marks for recording reflectance data of the optical disk 有权
标题翻译：具有用于记录光盘的反射率数据的多个径向延伸标记的光盘
公开(公告)号：US07505392B2
公开(公告)日：2009-03-17
申请号：US10988707
申请日：2004-11-16
申请人： Reiji Tamura , Hiroshi Shirai
发明人： Reiji Tamura , Hiroshi Shirai
IPC分类号： G11B7/24
CPC分类号： G11B7/00736 , G11B7/0053 , G11B7/24079 , G11B7/268 , Y10T428/21
摘要： An optical disk includes a first area on which user information is recorded, and a second area in which a plurality of marks radially extending are arranged in a track direction in the optical disk. Information about the reflectance of the optical disk is recorded in the second area. It is intended to optimize the amplification factor of the reproduced signal on the basis of the information about the reflectance of the optical disk in the second area. Control data and user data can be reproduced quickly and highly reliably without depending on the relationship between the reflectances of a recording area and a non-recorded area of the optical disk.
摘要翻译：光盘包括其上记录有用户信息的第一区域和在光盘中沿轨道方向布置多个径向延伸的标记的第二区域。关于光盘的反射率的信息被记录在第二区域中。旨在基于关于第二区域中的光盘的反射率的信息来优化再现信号的放大系数。控制数据和用户数据可以快速而高可靠地再现，而不依赖于记录区域的反射率与光盘的非记录区域之间的关系。

4. 发明申请

US20060003607A1 Electrical connector 失效
标题翻译：电连接器
公开(公告)号：US20060003607A1
公开(公告)日：2006-01-05
申请号：US11218877
申请日：2005-09-02
申请人： Hiroshi Shirai , Shinichi Hashimoto
发明人： Hiroshi Shirai , Shinichi Hashimoto
IPC分类号： H01R12/00
CPC分类号： H05K7/1069 , H01R12/714 , H01R13/24
摘要： The electrical connector of the present invention has an insulative housing having a first face across from a first electrical circuit and a second face across from a second electrical circuit. A plurality of contacts are mounted in the insulative housing, each of which contacts a contact point of the first electrical circuit at the first face, and contacts a contact point of the second electrical circuit at the second face, thereby interconnecting the first and second circuits. Each of the contacts has one portion of the contact supported by the insulative housing so as to be capable of pivoting in response to the displacement of the first contact portion and the second contact portion.
摘要翻译：本发明的电连接器具有绝缘壳体，其具有与第一电路相对的第一面和跨越第二电路的第二面。多个触点安装在绝缘壳体中，每个触点接触第一面处的第一电路的接触点，并且在第二面处接触第二电路的接触点，从而将第一和第二电路。每个触点具有由绝缘壳体支撑的触点的一部分，以便能够响应于第一接触部分和第二接触部分的位移而枢转。

5. 发明授权

US06976888B2 LGA socket contact 失效
标题翻译： LGA插座触点
公开(公告)号：US06976888B2
公开(公告)日：2005-12-20
申请号：US10662006
申请日：2003-09-12
申请人： Hiroshi Shirai , Shinichi Hashimoto , Hidenori Taguchi
发明人： Hiroshi Shirai , Shinichi Hashimoto , Hidenori Taguchi
IPC分类号： H01R33/76 , H01R4/48 , H01R13/24 , H05K7/10
CPC分类号： H01R13/2442 , H01R12/52 , H01R12/714 , H05K7/1069
摘要： A land grid array socket contact has a resilient contact that extends parallel to a base plate and is attached to at least one side walls of the base plate by a curved section angled approximately 180 degrees from the at least one side wall. The resilient contact has a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board. In another embodiment, the land grid array socket contact has a resilient contact extending from an upper end of a base plate. The resilient contact has an elongated slit substantially in a center of the resilient contact with respect to a direction of width and a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board.
摘要翻译：平面栅格阵列插座接触件具有平行于基板延伸的弹性接触件，并且通过与所述至少一个侧壁成大约180度的弯曲部分附接到所述基板的至少一个侧壁。弹性接触件具有用于接触接触垫的自由端。板端子从基板的下端延伸以连接到电路板。在另一个实施例中，焊盘格栅阵列插座接触件具有从基板的上端延伸的弹性接触。弹性接触件具有相对于宽度方向基本上位于弹性接触件的中心的细长狭缝和用于接触接触垫的自由端。板端子从基板的下端延伸以连接到电路板。

6. 发明授权

US06734960B1 Wafer defect measuring method and apparatus 有权
标题翻译：晶圆缺陷测量方法和装置
公开(公告)号：US06734960B1
公开(公告)日：2004-05-11
申请号：US09589087
申请日：2000-06-08
申请人： Hiroyuki Goto , Hiroyuki Saito , Makiko Fujinami , Hiroshi Shirai
发明人： Hiroyuki Goto , Hiroyuki Saito , Makiko Fujinami , Hiroshi Shirai
IPC分类号： G01N2100
CPC分类号： C30B29/06 , G01N21/95 , G01N21/956 , G01N25/00 , H01L22/12
摘要： The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered beam from a defect present in a subsurface layer of the wafer is detected by an image pick-up device. The temperature of the wafer is changed to at least two temperatures of T1 and T2 or to any one of plural temperatures by means of a heater and the intensity of a scattered beam is measured. It is taken into account that the light absorbance of silicon and the penetration depth of light in silicon vary depending on temperature, to determine the depth and a relative dimensional factor of an internal defect which causes scattering of light, as well as the number of such crystal defects.
摘要翻译：测量存在于硅晶片内部的缺陷的深度和相对尺寸因子，并计算出这些缺陷的数量。具有比硅的带隙大的能量的激光束被倾斜地辐射到半导体晶片，并且由图像拾取装置检测来自晶片的地下层中存在的缺陷的散射光束。通过加热器将晶片的温度改变为T1和T2的至少两个温度或多个温度中的任何一个，并测量散射光束的强度。考虑到硅的吸光度和硅中的光的穿透深度根据温度而变化，以确定导致光散射的内部缺陷的深度和相对尺寸因子，以及其数量晶体缺陷。

7. 发明授权

US06025596A Method for measuring epitaxial film thickness of multilayer epitaxial wafer 失效
标题翻译：测量多层外延晶片的外延膜厚度的方法
公开(公告)号：US06025596A
公开(公告)日：2000-02-15
申请号：US19049
申请日：1998-02-05
申请人： Hiroshi Shirai , Kenji Akai , Toshio Abe , Chikara Tojima , Katsuyuki Iwata
发明人： Hiroshi Shirai , Kenji Akai , Toshio Abe , Chikara Tojima , Katsuyuki Iwata
IPC分类号： G01B11/06 , H01L21/66 , H01L29/739 , H01L29/78 , G01J5/02
CPC分类号： G01B11/0625
摘要： In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
摘要翻译：在用于测量多层外延晶片的外延膜厚度的测量方法中，通过在至少500cm的远红外区域中使用红外辐射来测量具有不同电特性的至少两个外延层的多层外延晶片的反射率光谱 -1以下，对通过最大熵法得到的反射光谱进行频率分析，根据得到的分析光谱计算各外延层的膜厚。

8. 发明授权

US5744401A Silicon wafer manufacturing method eliminating final mirror-polishing step 失效
标题翻译：消除最终镜面抛光步骤的硅晶片制造方法
公开(公告)号：US5744401A
公开(公告)日：1998-04-28
申请号：US620195
申请日：1996-03-22
申请人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
发明人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
IPC分类号： H01L21/02 , H01L21/30 , H01L21/306 , H01L21/324 , H01L21/00
CPC分类号： H01L21/02008 , H01L21/3003
摘要： A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.
摘要翻译：对硅晶片进行镜面抛光，直到获得0.70-1.00nm的表面粗糙度Ra，0.80-1.10nm的Rq或4.50-7.00nm的Rt。将得到的晶片在氢气气氛中在不低于1200℃的温度下热处理30分钟至4小时。根据另一方面，将硅晶片进行镜面抛光，直到得到表面粗糙度值Ra'为0.08-0.70nm，均方厘米为0.10-0.90nm，PV为0.80-5.80nm，平方90μm的面积为90μm m，表面粗糙度Ra'为0.13-0.40nm，均方根为0.18-0.50nm，PV为1.30-2.50nm，平均面积为500nm至500nm。将得到的晶片在氢气气氛中在1100〜1300℃下热处理30分钟〜4小时。

9. 发明授权

US4942854A Valve operating device for use in internal combustion engine 失效
标题翻译：用于内燃机的阀门操作装置
公开(公告)号：US4942854A
公开(公告)日：1990-07-24
申请号：US317771
申请日：1989-03-02
申请人： Hiroshi Shirai , Takashi Tatsumi , Hisashi Kanda , Koichi Fukuo , Masahiko Motsumoto , Toshiaki Hiro
发明人： Hiroshi Shirai , Takashi Tatsumi , Hisashi Kanda , Koichi Fukuo , Masahiko Motsumoto , Toshiaki Hiro
IPC分类号： F01L1/08
CPC分类号： F01L1/08
摘要： A valve operating device for operating an intake or exhaust valve in an internal combustion engine includes a cam having a cam profile including a valve lifting portion for applying a force to open the engine valve and a base circle portion for allowing the valve to be closed, the cam profile having a valve opening point and a valve closing point between the valve lifting portion and the base circle portion, a cam follower slidably engaging the cam, and a hydraulic lash adjuster combined with the cam follower for eliminating any gap between the means and the engine valve. The base circle portion has a gradient cam surface or a combination of different gradient cam surfaces for canceling out valve-lifting radial displacement of the base circle portion.

10. 发明授权

US4502933A Apparatus for electrolytic treatment to metal web 失效
标题翻译：金属网电解处理设备
公开(公告)号：US4502933A
公开(公告)日：1985-03-05
申请号：US447555
申请日：1982-12-07
申请人： Teruo Mori , Hiroshi Shirai , Tsutomu Kakei , Tsuneyasu Matsuhisa , Masaru Watanabe
发明人： Teruo Mori , Hiroshi Shirai , Tsutomu Kakei , Tsuneyasu Matsuhisa , Masaru Watanabe
IPC分类号： C25D13/16 , C25D7/06 , C25D11/00 , C25D17/00 , C25D21/10 , C25F7/00
CPC分类号： C25D7/0614
摘要： A method and apparatus for electrolytic treatment to a metal web includes transporting the metal web between pairs of electrolytic-plates which are immersed in an electrolyzer. A plurality of insulating members extends from upper surface or bottom of the electrolyzer along a widthwise direction of the metal web, and the insulating members function to interrupt a flow of the electrolyte which is circulated in the electrolyzer which increases the agitation rate of the electrolyte in the vicinity of the surfaces of the metal web.
摘要翻译：用于金属网的电解处理的方法和装置包括将金属网传送到浸在电解槽中的电解板对之间。多个绝缘构件沿着金属腹板的宽度方向从电解槽的上表面或底部延伸，并且绝缘构件用于中断在电解槽中循环的电解质的流动，这增加了电解液的搅拌速度金属网的表面附近。

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