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1. 发明授权

US06461447B1 Substrate for epitaxial growth 失效
标题翻译：用于外延生长的基板
公开(公告)号：US06461447B1
公开(公告)日：2002-10-08
申请号：US09607626
申请日：2000-06-30
申请人： Hiroshi Shinyashiki , Hiroshi Koya , Tomonori Yamaoka , Kazuhito Matsukawa , Yasuhiro Kimura , Hidekazu Yamamoto
发明人： Hiroshi Shinyashiki , Hiroshi Koya , Tomonori Yamaoka , Kazuhito Matsukawa , Yasuhiro Kimura , Hidekazu Yamamoto
IPC分类号： H01L2900
CPC分类号： C30B29/06 , C30B15/203
摘要： A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
摘要翻译：具有外延生长硅的表面的衬底; 其特征在于，所述基板由通过切克劳斯基法（Czochralski）法生长的单晶硅棒的氧诱导堆垛层错产生区切割。

2. 发明授权

US5891265A SOI substrate having monocrystal silicon layer on insulating film 失效
标题翻译：在绝缘膜上具有单晶硅层的SOI衬底
公开(公告)号：US5891265A
公开(公告)日：1999-04-06
申请号：US907073
申请日：1997-08-06
申请人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/76 , H01L21/762 , H01L27/00 , H01L27/12
CPC分类号： H01L21/324 , H01L21/26533 , H01L21/76243
摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.
摘要翻译：将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。在该状态下，在硅层的下方形成氧化硅层。形成氧化硅颗粒并残留在残余硅层中。在保持该状态的同时，将硅衬底加热到不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热至900-1100℃，然后在低温下加热温度升至不低于1300℃的温度。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残留硅层的结晶度。氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错的上升，并且还抑制了在向高温区域加热期间间隙硅产生的每单位时间的速率。因此，可以降低SOI层的位错密度。

3. 发明授权

US5741717A Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film 失效
标题翻译：制造在绝缘膜上具有单晶硅层的SOI衬底的方法
公开(公告)号：US5741717A
公开(公告)日：1998-04-21
申请号：US391283
申请日：1995-02-21
申请人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/76 , H01L21/762 , H01L27/00 , H01L27/12
CPC分类号： H01L21/324 , H01L21/26533 , H01L21/76243
摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900.degree.-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.
摘要翻译：将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。在该状态下，在硅层的下方形成氧化硅层。形成氧化硅颗粒并残留在残余硅层中。在保持该状态的同时，将硅衬底加热到不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热到900-111℃，然后在低温升温速率不低于1300℃。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残余硅层的结晶度。氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错上升，并且还抑制了在加热到高温区域期间间隙硅产生的每单位时间的速率。因此，可以降低SOI层的位错密度。

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