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    • 1. 发明授权
    • Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereof
    • 半导体电路,逆变器电路,半导体装置及其制造方法
    • US07606082B2
    • 2009-10-20
    • US11532083
    • 2006-09-14
    • Hiroshi ShimabukuroHideto KobayashiYoshihiro ShigetaGen Tada
    • Hiroshi ShimabukuroHideto KobayashiYoshihiro ShigetaGen Tada
    • G11C7/10
    • G09G3/296H01J2217/49
    • The semiconductor circuit includes a voltage-controlled semiconductor device (N)N, the resistance value of which is controllable with a high voltage, the drain terminal of the N can be connected to the gate terminal (control terminal) of an output semiconductor device (NO) via a resistor (R) or to a last output stage of the driver circuit, the source terminal of the N is connected to the emitter terminal of the NO, and the gate terminal of the N is connected to the collector terminal, which is the output terminal, of the NO. When the input terminal of the semiconductor circuit is at the Hi-level, the NO OFF. By connecting the output terminal of the NO to the high-potential-side of a high-voltage circuit disposed separately and the negative electrode of a control power supply (VDD) to the low-potential-side of the high-voltage circuit in the state, in which the NO is OFF, a desired high voltage is applied between the collector and emitter of the NO. Since a p-channel MOSFET (PD) is turned ON as the input terminal potential is changed over to the Lo-level and the high voltage is still being applied to the output terminal of the NO, the N is turned ON and the NO is brought into the ON-state, in which the current driving ability of the NO is low. The semiconductor circuit can protect the devices from an over voltage with a simple circuit configuration.
    • 半导体电路包括其电阻值可以用高电压控制的压控半导体器件(N)N,N的漏极端子可以连接到输出半导体器件的栅极端子(控制端子) 否)通过电阻(R)或驱动电路的最后输出级,N的源极端子连接到NO的发射极端子,N的栅极端子连接到集电极端子, 是NO的输出端子。 当半导体电路的输入端子处于高电平时,NO OFF。 通过将NO的输出端子与单独设置的高电压电路的高电位侧和控制电源(VDD)的负电极连接到高压电路的低电位侧 状态,其中NO为OFF,在NO的集电极和发射极之间施加期望的高电压。 由于输入端电位切换到低电平,高电压仍然被施加到NO的输出端,因此P沟道MOSFET(PD)导通,N导通,NO为ON 进入ON状态,其中NO的当前驾驶能力低。 半导体电路可以通过简单的电路配置来保护器件免受过电压的影响。