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    • 4. 发明申请
    • IMAGE RECORDING SYSTEM
    • 图像记录系统
    • US20080180531A1
    • 2008-07-31
    • US11832252
    • 2007-08-01
    • Hiroshi Sekiguchi
    • Hiroshi Sekiguchi
    • H04N5/225
    • H04N1/00278H04N2101/00H04N2201/0055
    • An image recording system includes an image supply apparatus compatible with a first image recording service standard, an image recording apparatus compatible with a second image recording service standard, and a conversion apparatus connected, as a pseudo image recording apparatus compatible with the first standard, to the image supply apparatus via a communication medium compatible with the first standard and connected, as a pseudo image supply apparatus compatible with the second standard, to the image recording apparatus via a communication medium compatible with the second standard. The conversion apparatus converts a command received from the image supply apparatus into a command complying with the second standard before transmitting it to the image recording apparatus, and converts a command received from the image recording apparatus or event information relating to an image recording process into a message complying with the first standard before transmitting it to the image supply apparatus.
    • 图像记录系统包括与第一图像记录服务标准兼容的图像提供装置,与第二图像记录服务标准兼容的图像记录装置,以及作为与第一标准兼容的伪图像记录装置连接的转换装置, 通过与第一标准兼容的通信介质,通过与第二标准相兼容的通信介质将图像提供装置作为与第二标准兼容的伪图像提供装置连接到图像记录装置。 转换装置将从图像供给装置接收到的命令转换为符合第二标准的命令,然后将其发送到图像记录装置,并将从图像记录装置接收到的命令或与图像记录处理有关的事件信息转换为 在发送给图像供给装置之前符合第一标准的消息。
    • 9. 发明授权
    • Apparatus for depositing compound semiconductor crystal
    • 一种用于沉积化合物半导体晶体
    • US5304247A
    • 1994-04-19
    • US858981
    • 1992-05-21
    • Makoto KondoHiroshi Sekiguchi
    • Makoto KondoHiroshi Sekiguchi
    • C30B25/14C23C16/00
    • C23C16/45561C30B25/14Y10S438/935
    • A crystal of a compound semiconductor is deposited on a substrate using a metal organic vapor phase epitaxy within a reaction enclosure having a vertical flow of deposition gas supplied through a gas injector within the deposition enclosure. The deposition gas is supplied in a plurality of divided flow paths in which the flow rates are individually controlled. The injector comprises a plurality of gas jet ports which receive respective, plural flow paths and which are disposed in a two-dimensional array having dimensions corresponding to the two-dimensional main surface dimensions of the substrate thereby to supply a uniform flow of deposition gas over the entire two-dimensional main surface of the substrate. The method and apparatus have special application in the deposition of quaternary III-V compound semiconductor.
    • PCT No.PCT / JP91 / 01262 Sec。 371日期:1992年5月21日 102(e)日期1992年5月21日PCT 1991年9月20日PCT PCT。 出版物WO92 / 05577 日期:1992年4月2日。化学半导体的晶体在具有通过沉积封壳内的气体注入器供应的垂直沉积气体的反应封壳内的金属有机气相外延下沉积在基板上。 沉积气体以多个分开的流路供给,其中单独控制流量。 喷射器包括多个气体喷射口,其接收相应的多个流动路径,并且以具有对应于基板的二维主表面尺寸的尺寸的二维阵列设置,从而提供均匀的沉积气体流过 基板的整个二维主表面。 该方法和装置在沉积III-V族化合物半导体时具有特殊的应用。