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1. 发明授权

US08845915B2 Abrading agent and abrading method 有权
标题翻译：研磨剂和研磨方法
公开(公告)号：US08845915B2
公开(公告)日：2014-09-30
申请号：US13201518
申请日：2010-01-22
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： C03C15/00 , H01L21/321 , C09G1/02 , H01L21/768 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.
摘要翻译：一种抛光剂，其包含调节至pH为1.5-4的无机酸，氨基酸，保护膜形成剂，研磨剂，氧化剂，有机酸和水的组合物，其中钾的量相对于1kg不含有机酸的组合物，无机有机物将组合物的pH升高至4所需的氢氧化物为至少0.10mol，有机酸含有至少两个羧基，其中反相的对数的第一个酸解离常数（pKa1）不大于3。

2. 发明申请

US20130020283A1 POLISHING SOLUTION FOR COPPER POLISHING, AND POLISHING METHOD USING SAME 有权
标题翻译：用于铜抛光的抛光解决方案和使用该抛光方法的抛光方法
公开(公告)号：US20130020283A1
公开(公告)日：2013-01-24
申请号：US13639512
申请日：2011-06-06
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： C23F1/18
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L21/76898
摘要： The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.
摘要翻译：本发明的铜研磨用抛光液包含：含有羟基的有机酸，有机酸盐和有机酸酐中的至少一种以上的第一有机酸成分，至少为无机酸成分一种选自二价以上的无机酸和无机酸盐，氨基酸，保护膜形成剂，磨粒，氧化剂和水，其中无机酸成分的无机酸含量为 0.15质量％以上，氨基酸含量为0.30质量％以上，保护膜形成剂含量为0.10质量％以上，基于用于铜研磨的全部研磨液，第一有机酸成分有机酸相对于保护膜形成剂含量的含量为至少1.5。

3. 发明申请

US20110300778A1 ABRADING AGENT AND ABRADING METHOD 有权
标题翻译：抛光剂和抛光方法
公开(公告)号：US20110300778A1
公开(公告)日：2011-12-08
申请号：US13201518
申请日：2010-01-22
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： B24B1/00 , C09K13/04
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.
摘要翻译：一种抛光剂，其包含调节至pH为1.5-4的无机酸，氨基酸，保护膜形成剂，研磨剂，氧化剂，有机酸和水的组合物，其中钾的量相对于1kg不含有机酸的组合物，无机有机物将组合物的pH升高至4所需的氢氧化物为至少0.10mol，有机酸含有至少两个羧基，其中反相的对数的第一个酸解离常数（pKa1）不大于3。

4. 发明授权

US08889555B2 Polishing agent for copper polishing and polishing method using same 有权
公开(公告)号：US08889555B2
公开(公告)日：2014-11-18
申请号：US13201529
申请日：2010-02-12
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： H01L21/302 , C09G1/02 , C09K13/06 , H01L21/768 , H01L21/321 , C09K3/14 , B24B37/04
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.

5. 发明授权

US08859429B2 Polishing agent for copper polishing and polishing method using same 有权
标题翻译：抛光剂用于铜抛光和抛光方法使用
公开(公告)号：US08859429B2
公开(公告)日：2014-10-14
申请号：US13412893
申请日：2012-03-06
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： H01L21/302 , C09G1/02 , C09K13/06 , B24B37/04 , C09K3/14 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.
摘要翻译：一种用于铜抛光的抛光剂，包括（A）二价或更高价的无机酸，（B）氨基酸，（C）保护性成膜剂，（D）研磨剂，（E）氧化剂和（F）水，其中组分（A）的含量为至少0.08mol / kg，组分（B）的含量至少为0.20mol / kg，组分（C）的含量至少为0.02 mol / kg，满足以下条件（i）和（ii）中的任一个或两者。（i）：成分（A）的含量相对于成分（C）的含量的比例为2.00以上。（ii）：其还包含（G）选自有机酸及其酸酐中的至少一种。

6. 发明授权

US08877644B2 Polishing solution for copper polishing, and polishing method using same 有权
标题翻译：抛光抛光溶液，抛光方法使用相同
公开(公告)号：US08877644B2
公开(公告)日：2014-11-04
申请号：US13639512
申请日：2011-06-06
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L21/76898
摘要： The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.
摘要翻译：本发明的铜研磨用抛光液包含：含有羟基的有机酸，有机酸盐和有机酸酐中的至少一种以上的第一有机酸成分，至少为无机酸成分一种选自二价以上的无机酸和无机酸盐，氨基酸，保护膜形成剂，磨粒，氧化剂和水，其中无机酸成分的无机酸含量为 0.15质量％以上，氨基酸含量为0.30质量％以上，保护膜形成剂含量为0.10质量％以上，基于用于铜研磨的全部研磨液，第一有机酸成分有机酸相对于保护膜形成剂含量的含量为至少1.5。

7. 发明申请

US20120160804A1 POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME 有权
公开(公告)号：US20120160804A1
公开(公告)日：2012-06-28
申请号：US13412893
申请日：2012-03-06
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： C23F1/18 , C09K13/06 , B82Y30/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.

8. 发明申请

US20120024818A1 POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME 有权
标题翻译：用于铜抛光和抛光方法的抛光剂
公开(公告)号：US20120024818A1
公开(公告)日：2012-02-02
申请号：US13201529
申请日：2010-02-12
申请人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
发明人： Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
IPC分类号： C23F3/00 , C09K13/06
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/7684 , H01L21/76898
摘要： A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.
摘要翻译：一种用于铜抛光的抛光剂，包括（A）二价或更高价的无机酸，（B）氨基酸，（C）保护性成膜剂，（D）研磨剂，（E）氧化剂和（F）水，其中组分（A）的含量为至少0.08mol / kg，组分（B）的含量至少为0.20mol / kg，组分（C）的含量至少为0.02 mol / kg，满足以下条件（i）和（ii）中的任一个或两者。（i）：成分（A）的含量相对于成分（C）的含量的比例为2.00以上。（ii）：其还包含（G）选自有机酸及其酸酐中的至少一种。

9. 发明授权

US10796921B2 CMP fluid and method for polishing palladium 有权
公开(公告)号：US10796921B2
公开(公告)日：2020-10-06
申请号：US13377457
申请日：2010-02-05
申请人： Hisataka Minami , Ryouta Saisyo , Jin Amanokura , Yuuhei Okada , Hiroshi Ono
发明人： Hisataka Minami , Ryouta Saisyo , Jin Amanokura , Yuuhei Okada , Hiroshi Ono
IPC分类号： H01L21/321 , C09G1/02
摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

10. 发明申请

US20120100718A1 CMP Fluid and Method for Polishing Palladium 审中-公开
标题翻译： CMP流体和抛光钯的方法
公开(公告)号：US20120100718A1
公开(公告)日：2012-04-26
申请号：US13377457
申请日：2010-02-05
申请人： Hisataka Minami , Ryouta Saisyo , Jin Amanokura , Yuuhei Okada , Hiroshi Ono
发明人： Hisataka Minami , Ryouta Saisyo , Jin Amanokura , Yuuhei Okada , Hiroshi Ono
IPC分类号： H01L21/304 , C09K13/06
CPC分类号： H01L21/3212 , C09G1/02
摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.
摘要翻译：用于抛光本发明钯的CMP抛光液包括有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂。基板研磨方法是在基板和研磨布之间供给CMP抛光液的同时用抛光布对基板进行研磨的方法，其中基板是在面向研磨布的一侧上具有钯层的基板，CMP 抛光液是包含有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂的CMP抛光液。

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