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1. 发明授权

US08212288B2 Compound semiconductor substrate comprising a multilayer buffer layer 有权
标题翻译：化合物半导体衬底包括多层缓冲层
公开(公告)号：US08212288B2
公开(公告)日：2012-07-03
申请号：US12879035
申请日：2010-09-10
申请人： Jun Komiyama , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Jun Komiyama , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02507
摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
摘要翻译：一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5）交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。以这种方式制造化合物半导体衬底。

2. 发明授权

US08148753B2 Compound semiconductor substrate having multiple buffer layers 有权
标题翻译：具有多个缓冲层的复合半导体衬底
公开(公告)号：US08148753B2
公开(公告)日：2012-04-03
申请号：US12659927
申请日：2010-03-25
申请人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/06 , H01L29/22 , H01L33/00 , H01L29/24 , H01L29/732
CPC分类号： C30B29/403 , C23C16/0272 , C23C16/303 , C30B25/183 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
摘要翻译：本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

3. 发明申请

US20100244100A1 Compound semiconductor substrate 有权
标题翻译：化合物半导体衬底
公开(公告)号：US20100244100A1
公开(公告)日：2010-09-30
申请号：US12659927
申请日：2010-03-25
申请人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： C30B29/403 , C23C16/0272 , C23C16/303 , C30B25/183 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
摘要翻译：本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

4. 发明授权

US08785942B2 Nitride semiconductor substrate and method of manufacturing the same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US08785942B2
公开(公告)日：2014-07-22
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/15
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

5. 发明申请

US20110062556A1 COMPOUND SEMICONDUCTOR SUBSTRATE 有权
标题翻译：化合物半导体基板
公开(公告)号：US20110062556A1
公开(公告)日：2011-03-17
申请号：US12879035
申请日：2010-09-10
申请人： Jun KOMIYAMA , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Jun KOMIYAMA , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02507
摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
摘要翻译：一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5）交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和Al y Ga 1-y N单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。以这种方式制造化合物半导体衬底。

6. 发明申请

US20120211763A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20120211763A1
公开(公告)日：2012-08-23
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

7. 发明申请

US20090065812A1 COMPOUND SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：化合物半导体基板
公开(公告)号：US20090065812A1
公开(公告)日：2009-03-12
申请号：US12204328
申请日：2008-09-04
申请人： Yoshihisa ABE , Jun Komiyama , Shunichi Suzuki , Hiroshi Oishi , Akira Yoshida , Hideo Nakanishi
发明人： Yoshihisa ABE , Jun Komiyama , Shunichi Suzuki , Hiroshi Oishi , Akira Yoshida , Hideo Nakanishi
IPC分类号： H01L29/205
CPC分类号： H01L33/007 , C30B25/02 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/0254
摘要： Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.
摘要翻译：提供了一种化合物半导体衬底，可以使氮化物半导体单晶层的厚度大得多，同时在氮化物半导体单晶层中抑制裂纹，晶体缺陷等的产生。基板具有形成在晶体取向为{111}的Si单晶基板100上的第一中间层110。在层110中，由TiC，TiN，VC和VN中的任一种制成的第一金属化合物层110a和由与第一金属化合物层的化合物不同的任何一种化合物制成的第二金属化合物层110b 的TiC，TiN，VC和VN以这种顺序层叠在Si单晶上。

8. 发明授权

US08986243B2 Peritoneal dialysis patient connection system 有权
标题翻译：腹膜透析患者连接系统
公开(公告)号：US08986243B2
公开(公告)日：2015-03-24
申请号：US13421469
申请日：2012-03-15
申请人： Sobue Katsuyoshi , William R. Griswold , William W. Han , Andrew Steinhaus , Hiroshi Oishi
发明人： Sobue Katsuyoshi , William R. Griswold , William W. Han , Andrew Steinhaus , Hiroshi Oishi
IPC分类号： A61M39/18 , A61M39/16 , A61L2/10 , A61M1/28
CPC分类号： A61M39/18 , A61L2/10 , A61M1/28 , A61M1/285 , A61M39/165
摘要： Peritoneal dialysis connectors, connector sets, connector systems and methods are disclosed. In an embodiment, a connector includes, a body, a spike located at a first end of the body, a sealing ring sized to seal inside a female connector and located adjacent to the spike end, threads located adjacent to the sealing ring, and at least one barbed ring located adjacent to the threads at a second end of the body. The at least one barbed ring is configured to seal the second end of the body to a tube.
摘要翻译：公开了腹膜透析连接器，连接器组，连接器系统和方法。在一个实施例中，连接器包括主体，位于主体的第一端处的尖钉，密封环，其尺寸设置为密封阴连接器内并且位于邻近尖端的位置，位于邻近密封环的螺纹，并且位于在身体的第二端处与螺纹相邻的至少一个有倒刺的环。所述至少一个倒钩环被配置为将所述主体的第二端密封到管。

9. 发明申请

US20120209168A1 PERITONEAL DIALYSIS PATIENT CONNECTION SYSTEM 有权
标题翻译：腹膜透析患者连接系统
公开(公告)号：US20120209168A1
公开(公告)日：2012-08-16
申请号：US13421469
申请日：2012-03-15
申请人： Sobue Katsuyoshi , William R. Griswold , William W. Han , Andrew Steinhaus , Hiroshi Oishi
发明人： Sobue Katsuyoshi , William R. Griswold , William W. Han , Andrew Steinhaus , Hiroshi Oishi
IPC分类号： A61M1/28
CPC分类号： A61M39/18 , A61L2/10 , A61M1/28 , A61M1/285 , A61M39/165
摘要： Peritoneal dialysis connectors, connector sets, connector systems and methods are disclosed. In an embodiment, a connector includes, a body, a spike located at a first end of the body, a sealing ring sized to seal inside a female connector and located adjacent to the spike end, threads located adjacent to the sealing ring, and at least one barbed ring located adjacent to the threads at a second end of the body. The at least one barbed ring is configured to seal the second end of the body to a tube.
摘要翻译：公开了腹膜透析连接器，连接器组，连接器系统和方法。在一个实施例中，连接器包括主体，位于主体的第一端处的尖钉，密封环，其尺寸设置为密封阴连接器内并且位于邻近尖端的位置，位于邻近密封环的螺纹，并且位于在身体的第二端处与螺纹相邻的至少一个有倒刺的环。所述至少一个倒钩环被配置为将所述主体的第二端密封到管。

10. 发明授权

US08210906B2 Slicing method and method for manufacturing epitaxial wafer 有权
标题翻译：用于制造外延晶片的切片方法和方法
公开(公告)号：US08210906B2
公开(公告)日：2012-07-03
申请号：US12310663
申请日：2007-08-22
申请人： Hiroshi Oishi , Daisuke Nakamata
发明人： Hiroshi Oishi , Daisuke Nakamata
IPC分类号： B24B53/095
CPC分类号： B28D5/0064 , B24B27/0633 , B28D5/007 , B28D5/045 , Y10T83/0443 , Y10T83/9292 , Y10T117/10 , Y10T117/1004
摘要： A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply temperature profile of the slurry during the slicing process and the relationship to the axial displacement of the rollers. This relationship is used to implement slurry delivery during the slicing process. The resultant wafers are bowed in a uniform direction. This slicing method provides excellent reproducibility in addition to producing wafers that are bowed in a uniform direction.
摘要翻译：晶片切片方法包括将线缠绕在辊子上并将线材压在锭子上，同时向辊子供应浆料。先前进行的实验提供了在切片过程期间浆料的供应温度曲线以及与辊的轴向位移的关系。这种关系用于在切片过程中实现浆料输送。所得的晶片在均匀的方向上弯曲。除了制造在均匀方向上弯曲的晶片之外，该切片方法提供了优异的再现性。

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