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1. 发明授权

US4229506A Piezoelectric crystalline film of zinc oxide and method for making same 失效
标题翻译：氧化锌的压电结晶膜及其制造方法
公开(公告)号：US4229506A
公开(公告)日：1980-10-21
申请号：US942351
申请日：1978-09-14
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： C04B35/453 , C01G9/02 , C23C14/08 , C30B28/12 , C30B29/16 , H01L41/18 , B32B9/00 , C23C15/00
CPC分类号： H01L41/316 , H01L41/18 , Y10S428/913
摘要： Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive element, uranium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency. Such films are made by sputtering zinc oxide and uranium onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing uranium.
摘要翻译：基板上的压电晶体膜，其是具有六方晶体结构且基本上垂直于基板表面的c轴的结晶氧化锌膜，所述结晶氧化锌膜含有作为添加元素的铀。压电晶体膜具有高电阻率和光滑的表面，并且可以制造具有良好转换效率的压电换能器。这样的膜通过将氧化锌和铀溅射到基材上，由基本上由含有铀的氧化锌的陶瓷组成的膜材料源进行溅射而制成。

2. 发明授权

US4219608A Piezoelectric crystalline film of zinc oxide and method for making same 失效
标题翻译：氧化锌的压电结晶膜及其制造方法
公开(公告)号：US4219608A
公开(公告)日：1980-08-26
申请号：US942278
申请日：1978-09-14
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： H01L41/18 , H01L41/316 , C23C15/00 , C04B35/00
CPC分类号： H01L41/316 , H01L41/18 , Y10T428/31826 , Y10T428/31931
摘要： Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive or additives, at least one element selected from the group of sulphur, selenium and tellurium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with goal conversion efficiency. The piezoelectric crystalline films are made by sputtering zinc oxide and an additive onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing at least one element of the group consisting of sulphur, selenium and tellurium.
摘要翻译：作为基本上垂直于基板表面的c轴的结晶氧化锌膜的基板上的压电晶体膜，所述结晶氧化锌膜含有选自硫，硒和碲。压电晶体膜具有高电阻率和光滑的表面，并且可以制造具有目标转换效率的压电换能器。压电晶体膜通过将氧化锌和添加剂溅射到基材上而制成，该膜材料源主要由含有硫，硒和碲组成的组中的至少一种元素的氧化锌陶瓷组成。

3. 发明授权

US4205117A Piezoelectric crystalline film of zinc oxide and method for making same 失效
标题翻译：氧化锌的压电结晶膜及其制造方法
公开(公告)号：US4205117A
公开(公告)日：1980-05-27
申请号：US940335
申请日：1978-09-07
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： C04B35/453 , C01G9/02 , C23C14/08 , C30B28/12 , C30B29/16 , H01L41/18 , C23C13/00 , C04B35/00
CPC分类号： H01L41/316 , H01L41/187 , Y10T428/31826 , Y10T428/31931
摘要： Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive element, phosphorus. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency. Such films are made by sputtering zinc oxide and phosphorus onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing phosphorus.
摘要翻译：基板上的压电晶体膜，其是具有基本上垂直于基板表面的c轴的结晶氧化锌膜，所述结晶氧化锌膜含有作为添加元素的磷。压电晶体膜具有高电阻率和光滑的表面，并且可以制造具有良好转换效率的压电换能器。这样的膜通过将氧化锌和磷溅射到基材上，由主要由含磷的氧化锌的陶瓷组成的膜材料源进行溅射。

4. 发明授权

US4174421A Piezoelectric crystalline film of zinc oxide and method for making same 失效
标题翻译：氧化锌的压电结晶膜及其制造方法
公开(公告)号：US4174421A
公开(公告)日：1979-11-13
申请号：US940336
申请日：1978-09-07
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： H01L41/18 , H01L41/316 , C23C15/00 , C04B35/00
CPC分类号： H01L41/316 , H01L41/18 , Y10T428/31826
摘要： Piezoelectric crystalline film of zinc oxide with a hexagonal crystal structure and a c-axis substantially perpendicular to the film surface, the crystalline film containing, as additive elements, vanadium and manganese together with or without copper. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency which can be used in a wide range of low to high frequencies. Such films can be made by a method comprising sputtering source materials, i.e., zinc oxide, vanadium and manganese together with or without copper onto a surface of a substrate to form a crystalline zinc oxide film, the sputtering being effected by using a film material source consisting essentially of a ceramic of zinc oxide containing vanadium, and manganese together with or without copper.
摘要翻译：具有六方晶系结构的氧化锌和基本上垂直于膜表面的c轴的氧化锌的压电结晶膜，该结晶膜含有或不与铜一起作为添加元素的钒和锰。压电晶体膜具有高电阻率和平滑的表面，并且使得可以生产具有良好转换效率的压电换能器，其可用于宽范围的低频到高频。这样的膜可以通过包括溅射源材料即氧化锌，钒和锰与铜或不含铜溅射到衬底的表面上以形成结晶氧化锌膜的方法来制造，溅射是通过使用膜材料源基本上由含有钒的氧化锌陶瓷，以及含有或不含有铜的锰组成。

5. 发明授权

US4164676A Piezoelectric crystalline film of zinc oxide containing additive elements 失效
标题翻译：包含添加元素的氧化锌的压电晶体膜
公开(公告)号：US4164676A
公开(公告)日：1979-08-14
申请号：US927401
申请日：1978-07-24
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： C04B35/453 , C01G9/02 , C23C14/08 , C30B28/12 , C30B29/16 , H01L41/18 , H03H3/08
CPC分类号： H01L41/187
摘要： Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis perpendicular to the substrate surface, the crystalline zinc oxide film containing as additive elements, vanadium, manganese and at least one element selected from the group consisting of chromium, iron, cobalt and nickel. The piezoelectric crystalline films are homogeneous and have high resistivity and a smooth surface so that they can be used as a transducer with good conversion efficiency in a wide range of low to high frequencies.
摘要翻译：作为与基板表面垂直的c轴的结晶性氧化锌膜的基板上的压电晶体膜，含有作为添加元素的结晶性氧化锌膜，钒，锰以及选自铬，铁，钴和镍。压电晶体膜是均匀的并且具有高电阻率和平滑的表面，使得它们可以用作在宽范围的低至高频率下具有良好转换效率的换能器。

6. 发明授权

US4156050A Piezoelectric crystalline films and method of preparing the same 失效
标题翻译：压电晶体薄膜及其制备方法
公开(公告)号：US4156050A
公开(公告)日：1979-05-22
申请号：US874392
申请日：1978-02-02
申请人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
发明人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
IPC分类号： C04B35/453 , C01G9/02 , C23C14/08 , C30B28/12 , C30B29/16 , H01L41/18 , C23C15/00 , C04B35/00
CPC分类号： H01L41/316 , H01L41/187
摘要： Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of vanadium. These films are prepared by radio-frequency sputtering.
摘要翻译：基本上由具有垂直于衬底表面的c轴的结晶氧化锌膜组成的含有0.01至20.0原子％的钒的压电晶体膜。这些膜通过射频溅射制备。

7. 发明授权

US4151324A Piezoelectric crystalline films and method of preparing the same 失效
标题翻译：压电晶体薄膜及其制备方法
公开(公告)号：US4151324A
公开(公告)日：1979-04-24
申请号：US886821
申请日：1978-03-15
申请人： Toshio Ogawa , Hiroshi Nishiyama , Tasuku Mashio
发明人： Toshio Ogawa , Hiroshi Nishiyama , Tasuku Mashio
IPC分类号： H01L41/18 , C23C13/00 , C04B35/00
CPC分类号： H01L41/187
摘要： Piezoelectric crystalline films on substrate, which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of at least one element selected from the group consisting of iron, chromium, cobalt and nickel.
摘要翻译：基底上的压电晶体膜，其基本上由具有垂直于衬底表面的c轴的结晶氧化锌膜组成，含有0.01至20.0原子％的选自铁，铬，钴和镍的至少一种元素。

8. 发明授权

US4182793A Piezoelectric crystalline film of zinc oxide 失效
标题翻译：氧化锌的压电晶体膜
公开(公告)号：US4182793A
公开(公告)日：1980-01-08
申请号：US913803
申请日：1978-06-08
申请人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
发明人： Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
IPC分类号： H01L41/18 , C23C15/00 , C04B35/00
CPC分类号： H01L41/187
摘要： Piezoelectric crystallime film on a substrate, which is a crystalline zinc oxide film with a c-axis perpendicular to the substrate surface, the crystalline zinc oxide film containing one copper compound selected from the group consisting of copper sulphide, copper telluride, copper selenide, copper selenate, copper phosphide and copper phosphate. The copper is present in the crystalline zinc oxide film in the form of its sulphide, telluride, selenide, selenate, phosphide or phosphate and in the concentration of 0.01 to 20.0 atomic percent. The piezoelectric crystalline film have high resistivity and a smooth surface so that they can be used in a wide range of low to high frequencies.
摘要翻译：作为与基板表面垂直的c轴的结晶氧化锌膜的基板上的压电结晶膜，含有选自硫化铜，碲化铜，硒化铜，铜的一种铜化合物的结晶氧化锌膜硒酸盐，磷酸铜和磷酸铜。铜以其硫化物，碲化物，硒化物，硒酸盐，磷化物或磷酸盐的形式存在于结晶氧化锌膜中，浓度为0.01至20.0原子％。压电晶体膜具有高电阻率和平滑的表面，使得它们可以在宽范围的低频到高频使用。

9. 发明授权

US4142124A Piezoelectric crystalline ZnO with 0.01 to 20.0 atomic % Mn 失效
标题翻译： 0.01〜20.0原子％Mn的压电晶体ZnO
公开(公告)号：US4142124A
公开(公告)日：1979-02-27
申请号：US872342
申请日：1978-01-25
申请人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
发明人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
IPC分类号： H01L41/18
CPC分类号： H01L41/187
摘要： Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface containing 0.01 to 20.0 atomic percent of manganese with or without 0.01 to 20.0 atomic percent of copper.
摘要翻译：基本上由结晶氧化锌膜组成的压电晶体膜，其中c轴垂直于衬底表面，其中含有0.01至20.0原子％的含有或不含有0.01至20.0原子百分比的铜的锰。

10. 发明授权

US4139678A Piezoelectric crystalline films and method of preparing the same 失效
标题翻译：压电晶体薄膜及其制备方法
公开(公告)号：US4139678A
公开(公告)日：1979-02-13
申请号：US874391
申请日：1978-02-02
申请人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
发明人： Toshio Ogawa , Tasuku Mashio , Hiroshi Nishiyama
IPC分类号： C04B35/453 , C01G9/02 , C23C14/08 , C30B28/12 , C30B29/16 , H01L41/18 , C23C15/00 , C04B35/00
CPC分类号： H01L41/316 , H01L41/187
摘要： Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of bismuth. These films are prepared by radio-frequency sputtering.
摘要翻译：基本上由具有垂直于衬底表面的c轴的结晶氧化锌膜组成的含有0.01至20.0原子％的铋的压电晶体膜。这些膜通过射频溅射制备。

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