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1. 发明授权

US5399511A Method of manufacturing a hetero bipolar transistor 失效
标题翻译：异质双极晶体管的制造方法
公开(公告)号：US5399511A
公开(公告)日：1995-03-21
申请号：US280199
申请日：1994-07-25
申请人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
发明人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
IPC分类号： H01L29/165 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66242 , H01L29/7378
摘要： The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.
摘要翻译：该说明书公开了一种异质双极晶体管，其包括半导体衬底，用作集电极的第一硅层，用作基极的第一硅 - 锗层，用作集电极的第二硅层和第二硅 - 锗层。第二硅 - 锗层的侧壁与第一硅层，第一硅 - 锗层和第二硅层的侧壁接触。第二硅锗层被设置为围绕第一硅层，第一硅 - 锗层和第二硅层，并且具有与第一硅 - 锗层基本相同的能带隙。

2. 发明授权

US5356821A Method for manufacturing semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US5356821A
公开(公告)日：1994-10-18
申请号：US104907
申请日：1993-08-12
申请人： Hiroshi Naruse , Shin-ichi Taka
发明人： Hiroshi Naruse , Shin-ichi Taka
IPC分类号： H01L27/092 , H01L21/8238 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/49 , H01L29/737 , H01L21/265
CPC分类号： H01L29/7378 , H01L21/8248 , H01L21/8249 , H01L29/4966 , Y10S148/009
摘要： A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si.sub.1-x Ge.sub.x (1>x>0).
摘要翻译：根据本发明的半导体集成电路包括半导体衬底，多个MOS场效应晶体管，其各自形成在半导体衬底的表面区域上并具有源极和漏极区，栅极绝缘膜形成在源极和源极之间的区域上漏极区域和形成在栅极绝缘膜上的栅电极。栅电极包括由Si1-xGex（1> x> 0）表示的多晶SiGe混合晶体。

3. 发明授权

US5365090A Hetero bipolar transistor and method of manufacturing the same 失效
标题翻译：异质双极晶体管及其制造方法
公开(公告)号：US5365090A
公开(公告)日：1994-11-15
申请号：US45707
申请日：1993-04-14
申请人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
发明人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
IPC分类号： H01L29/165 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L29/72
CPC分类号： H01L29/66242 , H01L29/7378
摘要： The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.
摘要翻译：该说明书公开了一种异质双极晶体管，其包括半导体衬底，用作集电极的第一硅层，用作基极的第一硅 - 锗层，用作集电极的第二硅层和第二硅 - 锗层。第二硅 - 锗层的侧壁与第一硅层，第一硅 - 锗层和第二硅层的侧壁接触。第二硅锗层被设置为围绕第一硅层，第一硅 - 锗层和第二硅层，并且具有与第一硅 - 锗层基本相同的能带隙。

4. 发明授权

US5102826A Method of manufacturing a semiconductor device having a silicide layer 失效
标题翻译：制造具有硅化物层的半导体器件的方法
公开(公告)号：US5102826A
公开(公告)日：1992-04-07
申请号：US610216
申请日：1990-11-09
申请人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
发明人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
IPC分类号： H01L21/265 , H01L21/28 , H01L21/285
CPC分类号： H01L21/26506 , H01L21/28518 , Y10S148/106
摘要： According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.
摘要翻译：根据本发明的半导体器件的制造方法，在硅衬底上形成绝缘膜，在绝缘膜上形成具有预定图案的抗蚀剂膜，然后在绝缘膜上形成开口作为掩模的抗蚀膜。然后，将具有导电性的杂质注入到所述硅衬底中，并以抗蚀剂膜作为掩模将硅离子注入到硅衬底中，并将硅离子注入到硅衬底中。之后，除去抗蚀剂膜。此外，形成至少覆盖开口的难熔金属膜。通过退火形成引起具有导电性的杂质的电活化的扩散层，随后在硅衬底和金属膜的表面相遇处形成硅化物层。

5. 发明申请

US20100140719A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100140719A1
公开(公告)日：2010-06-10
申请号：US12563247
申请日：2009-09-21
申请人： Hiroyuki YAMASAKI , Kenji Kojima , Hiroshi Naruse , Hideaki Harakawa
发明人： Hiroyuki YAMASAKI , Kenji Kojima , Hiroshi Naruse , Hideaki Harakawa
IPC分类号： H01L27/06 , H01L21/28
CPC分类号： H01L29/7833 , H01L21/823807 , H01L27/0629 , H01L28/20 , H01L29/4966 , H01L29/518
摘要： A semiconductor device includes a substrate which includes an element region and an isolation region, a transistor portion which includes a gate insulating film formed on the element region, and a gate electrode having a metal film formed on the gate insulating film and a first semiconductor film formed on the metal film, and a resistance element portion which includes a second semiconductor film formed above the substrate and formed of the same material as that of the first semiconductor film, and a cavity formed between the substrate and the second semiconductor film.
摘要翻译：半导体器件包括：衬底，其包括元件区域和隔离区域;晶体管部分，其包括形成在元件区域上的栅极绝缘膜;以及栅电极，具有形成在栅极绝缘膜上的金属膜和第一半导体膜形成在所述金属膜上的电阻元件部分，以及电阻元件部分，其包括在所述基板上形成并由与所述第一半导体膜相同的材料形成的第二半导体膜，以及形成在所述基板和所述第二半导体膜之间的空腔。

6. 发明申请

US20070191615A1 Polymerizable compound and use thereof 有权
标题翻译：可聚合化合物及其用途
公开(公告)号：US20070191615A1
公开(公告)日：2007-08-16
申请号：US10594497
申请日：2005-03-31
申请人： Atsuo Otsuji , Hiroshi Naruse , Mitsuo Nakamura
发明人： Atsuo Otsuji , Hiroshi Naruse , Mitsuo Nakamura
IPC分类号： C07D327/00
CPC分类号： C08G75/06 , G02B1/04
摘要： The present invention is to provide a polymerizable compound which can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7, and an optical component composed of such a resin. Disclosed is a compound represented by the general formula (3), wherein, in the formula, M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of from 1 to n; q represents an integer of from 1 to (n-p); n represents a valence of a metal atom M; Yq each independently represent an inorganic or organic residue; and when q is 2 or more, Yq may be bonded to one another for forming a ring structure with the intermediary of a metal atom M.
摘要翻译：本发明提供一种聚合性化合物，其可以成为具有高透明度，高耐热性和塑料透镜等的光学部件所需的机械强度的树脂的原料，同时获得高折射率（nd） 1.7，以及由这种树脂构成的光学部件。公开了由通式（3）表示的化合物，其中在式中，M表示金属原子; X 1和X 2各自独立地表示硫原子或氧原子; R 1表示二价有机基团; m表示0或1以上的整数， p表示1〜n的整数， q表示1〜（n-p）的整数。 n表示金属原子M的化合价; Yq各自独立地表示无机或有机残基; 当q为2以上时，可以将Yq彼此结合形成具有金属原子M的中间环状结构。

7. 发明授权

US06758890B2 Aqueous ink and process for producing dye 失效
标题翻译：水性油墨和生产染料的方法
公开(公告)号：US06758890B2
公开(公告)日：2004-07-06
申请号：US10088352
申请日：2002-03-15
申请人： Yoriaki Matsuzaki , Kenichi Fujii , Osamu Kohgo , Hiroshi Naruse , Tsutami Misawa
发明人： Yoriaki Matsuzaki , Kenichi Fujii , Osamu Kohgo , Hiroshi Naruse , Tsutami Misawa
IPC分类号： C09D1102
CPC分类号： C09D11/328 , C09B43/16 , C09B62/043 , C09B62/08
摘要： Aqueous ink for ink jet recording comprising a coloring matter and an aqueous medium, in which at least one of dyes represented by the formula (A) or a salt thereof is contained as the coloring matter wherein R1 and R3, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, an amino group, a hydroxyl group or a halogen atom, R2 and R4, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group or an aralkyl group, A represents an optionally substituted phenyl group or naphthyl group, X represents a divalent bonding group free from a saturated carbon ring, and m and n, independently from each other, represent an integer of 1 to 4.
摘要翻译：用于喷墨记录的水性油墨包括着色剂和水性介质，其中含有至少一种由式（A）表示的染料或其盐作为着色剂，其中R1和R3彼此独立地表示氢原子，任选取代的烷基，任选取代的烷氧基，氨基，羟基或卤素原子，R 2和R 4彼此独立地表示氢原子，任选取代的烷基，任选取代的芳基或芳烷基，A表示任选取代的苯基或萘基，X表示不含饱和碳环的二价键合基团，m和n彼此独立地表示1〜4的整数。

8. 发明授权

US5665616A Process of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US5665616A
公开(公告)日：1997-09-09
申请号：US731012
申请日：1996-10-09
申请人： Koji Kimura , Hiroshi Naruse
发明人： Koji Kimura , Hiroshi Naruse
IPC分类号： H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/732 , H01L21/265
CPC分类号： H01L27/0623 , H01L21/8249
摘要： In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.
摘要翻译：在双极晶体管制造工艺和CMOS晶体管制造工艺的有效组合的Bi-CMOS工艺中，在Bi-CMOS器件上形成硅化物膜的情况下，其中双极晶体管具有通过外延生长的硅膜制成的内基区域和在其自对准方式上形成在栅电极，源区和漏区上的具有硅化物的MOS晶体管形成在同一半导体衬底上，而硅膜内部基极区域在步骤中外延生长，在同一步骤中同时在源极/漏极区域上外延生长硅膜。

9. 发明授权

US5545751A Process for the preparation of 4-methoxy-2,2',6'-Trimethyldiphenylamine 失效
标题翻译： 4-甲氧基-2,2'，6'-三甲基二苯胺的制备方法
公开(公告)号：US5545751A
公开(公告)日：1996-08-13
申请号：US358566
申请日：1994-12-14
申请人： Chiyuki Kusuda , Masayuki Furuya , Masaru Wada , Yoshihiro Irizato , Hiroshi Naruse , Teruyuki Nagata
发明人： Chiyuki Kusuda , Masayuki Furuya , Masaru Wada , Yoshihiro Irizato , Hiroshi Naruse , Teruyuki Nagata
IPC分类号： C07C213/00 , C07C217/92 , C07C209/22
CPC分类号： C07C213/00 , C07C217/92
摘要： A process for the preparation of 4-methoxy-2,2',6-trimethyldiphenylamine, which comprises heating and reacting 2,6-dimethylcyclohexanone and 2-methyl-4-methoxyaniline in the presence of a dehydrogenation catalyst while removing the resultant hydrogen and water from the reaction system.
摘要翻译：一种制备4-甲氧基-2,2'，6-三甲基二苯胺的方法，该方法包括在脱氢催化剂的存在下加热和反应2,6-二甲基环己酮和2-甲基-4-甲氧基苯胺，同时除去所得氢气，来自反应体系的水。

10. 发明授权

US4022686A Flotation process for copper ores and copper smelter slags 失效
标题翻译：铜矿和铜冶炼炉渣浮选工艺
公开(公告)号：US4022686A
公开(公告)日：1977-05-10
申请号：US659965
申请日：1976-02-20
申请人： Akira Arakatsu , Hajime Nakazawa , Hiroshi Naruse
发明人： Akira Arakatsu , Hajime Nakazawa , Hiroshi Naruse
IPC分类号： B03D1/004 , B03D1/02 , C11D1/02 , C11D1/58 , C11D1/65 , C11D1/66 , C11D1/835 , B03D1/06
CPC分类号： B03D1/014 , B03D1/006 , B03D1/012 , B03D2201/02 , B03D2203/02
摘要： A flotation process in which copper ores or copper converter slags are ground and firstly have added thereto benzotriazole or alkyl benzotriazole as an activator and secondly one or more collectors selected from the group consisting of xanthates, dithiophosphates, thiocarbamate esters, dithiocarbamates, mercaptans and dixanthogens and further, if desired, a promoter such as kerosene, light oil, bunker oil or petroleum lubricant is added to improve the recovery for the flotation of copper ores or copper smelter slags.
摘要翻译：一种浮选方法，其中将铜矿石或铜转炉炉渣研磨并首先加入苯并三唑或烷基苯并三唑作为活化剂，其次是一种或多种选自黄原酸盐，二硫代磷酸盐，硫代氨基甲酸酯，二硫代氨基甲酸盐，硫醇和二恶烷的收集剂，以及此外，如果需要，加入促进剂如煤油，轻油，燃油或石油润滑剂以改善铜矿石或铜冶炼炉渣的浮选回收。

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