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    • 2. 发明授权
    • Failure detection system, failure detection method, and computer program product
    • 故障检测系统,故障检测方法和计算机程序产品
    • US07043384B2
    • 2006-05-09
    • US10784819
    • 2004-02-24
    • Hiroshi MatsushitaKenichi KadotaYoshiyuki Shioyama
    • Hiroshi MatsushitaKenichi KadotaYoshiyuki Shioyama
    • G01R31/28G01R31/00
    • G11C29/006G01R31/01G11C29/56G11C2029/0403G11C2029/5604
    • A failure detection system includes a wafer test information input unit which acquires pass/fail maps for wafers for a plurality of types of semiconductor devices, displaying failure chip areas based on results of electrical tests performed on chips; an analogous test information input unit which classifies the electrical tests into analogous electrical tests with regard to analogous failures among the semiconductor devices; a subarea setting unit which assigns subareas common to the types of semiconductor devices on a wafer surface; a characteristic quantity calculation unit which statistically calculates characteristic quantities based on a number of the failure chip areas included in the subareas for each analogous electrical test; and a categorization unit which obtains correlation coefficients between the characteristic quantities corresponding to the subareas, and classifies clustering failure patterns of the failure chip areas into categories by comparing the correlation coefficients with a threshold.
    • 故障检测系统包括晶片测试信息输入单元,其获取多种类型的半导体器件的晶片的通过/失败映射,基于对芯片执行的电测试的结果显示故障芯片区域; 类似的测试信息输入单元,其将电测试分类为关于半导体器件中的类似故障的类似电测试; 子区域设定单元,其在晶片表面上分配与所述半导体器件的类型相同的子区域; 特征量计算单元,其基于每个类似电测试在所述子区域中包括的故障码片区域的数量来统计计算特征量; 以及分类单元,其获得与所述子区域相对应的特征量之间的相关系数,并且通过将所述相关系数与阈值进行比较来将所述故障码片区域的聚类故障模式分类。
    • 3. 发明申请
    • Failure detection system, failure detection method, and computer program product
    • 故障检测系统,故障检测方法和计算机程序产品
    • US20050102591A1
    • 2005-05-12
    • US10784819
    • 2004-02-24
    • Hiroshi MatsushitaKenichi KadotaYoshiyuki Shioyama
    • Hiroshi MatsushitaKenichi KadotaYoshiyuki Shioyama
    • G01R31/26G01R31/01G11C29/00G11C29/56H01L21/66G01R31/28
    • G11C29/006G01R31/01G11C29/56G11C2029/0403G11C2029/5604
    • A failure detection system includes a wafer test information input unit which acquires pass/fail maps for wafers for a plurality of types of semiconductor devices, displaying failure chip areas based on results of electrical tests performed on chips; an analogous test information input unit which classifies the electrical tests into analogous electrical tests with regard to analogous failures among the semiconductor devices; a subarea setting unit which assigns subareas common to the types of semiconductor devices on a wafer surface; a characteristic quantity calculation unit which statistically calculates characteristic quantities based on a number of the failure chip areas included in the subareas for each analogous electrical test; and a categorization unit which obtains correlation coefficients between the characteristic quantities corresponding to the subareas, and classifies clustering failure patterns of the failure chip areas into categories by comparing the correlation coefficients with a threshold.
    • 故障检测系统包括晶片测试信息输入单元,其获取多种类型的半导体器件的晶片的通过/失败映射,基于对芯片执行的电测试的结果显示故障芯片区域; 类似的测试信息输入单元,其将电测试分类为关于半导体器件中的类似故障的类似电测试; 子区域设定单元,其在晶片表面上分配与所述半导体器件的类型相同的子区域; 特征量计算单元,其基于每个类似电测试在所述子区域中包括的故障码片区域的数量来统计计算特征量; 以及分类单元,其获得与所述子区域相对应的特征量之间的相关系数,并且通过将所述相关系数与阈值进行比较来将所述故障码片区域的聚类故障模式分类。
    • 4. 发明授权
    • Linear pattern detection method and apparatus
    • 线性图案检测方法和装置
    • US08081814B2
    • 2011-12-20
    • US12393797
    • 2009-02-26
    • Hiroshi MatsushitaKenichi KadotaToshiyuki Aritake
    • Hiroshi MatsushitaKenichi KadotaToshiyuki Aritake
    • G06K9/00G01N21/00
    • G06K9/4604G06T7/0004G06T2207/20021G06T2207/30148
    • The present invention provides a linear pattern detection method which can extract and detect linear patterns distinguished by a microscopic defect distribution profile even if skipped measurements are taken. The linear pattern detection method acquires a defect map created based on results of defect inspection of a wafer; divides the defect map into a plurality of first segments; calculates a correlation coefficient of a point sequence in each of the first segments, the point sequence corresponding to a defect group contained in the first segments; calculates a total number of those first segments in which the correlation coefficient is equal to or larger than a first threshold; and determines that the wafer contains a linear pattern if the total number is equal to or larger than a second threshold.
    • 本发明提供一种线性图案检测方法,其可以提取和检测由微观缺陷分布轮廓区分的线性图案,即使进行了跳过的测量。 线性图案检测方法获取基于晶片的缺陷检查结果创建的缺陷图; 将缺陷图划分成多个第一段; 计算每个第一段中的点序列的相关系数,对应于包含在第一段中的缺陷组的点序列; 计算相关系数等于或大于第一阈值的那些第一段的总数; 并且如果总数等于或大于第二阈值,则确定晶片包含线性模式。
    • 5. 发明授权
    • Failure detecting method, failure detecting apparatus, and semiconductor device manufacturing method
    • 故障检测方法,故障检测装置和半导体器件制造方法
    • US08170707B2
    • 2012-05-01
    • US12256265
    • 2008-10-22
    • Hiroshi MatsushitaKenichi KadotaToshiyuki Aritake
    • Hiroshi MatsushitaKenichi KadotaToshiyuki Aritake
    • G06F19/00
    • G05B19/41875G05B23/0229G05B2219/1112G05B2219/32222G05B2219/45031G05B2223/02Y02P90/22
    • A method for inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting region segments in the wafer, setting a region number for each segment, calculating foreign substance density of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process cause of failure occurrence.
    • 一种用于在晶片处理过程中的每个处理过程之后输入通过异物检查创建的异物检查图的方法,输入在晶片处理过程之后通过管芯分类测试创建的管芯分类图,在 晶片,根据异物检查图来计算各段的区域编号,计算区域段的异物密度,并使用区域编号绘制异物密度,计算异物检查图波形特征量, 计算区域段中的故障密度,并使用区域编号绘制故障密度,计算模具分类图波形特征量,计算异物检查图波形特征量与模具之间的相似度 排序图波形特征量,并识别处理过程原因 的失败发生。
    • 6. 发明申请
    • FAILURE DETECTING METHOD, FAILURE DETECTING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    • 故障检测方法,故障检测装置和半导体器件制造方法
    • US20090117673A1
    • 2009-05-07
    • US12256265
    • 2008-10-22
    • Hiroshi MATSUSHITAKenichi KadotaToshiyuki Aritake
    • Hiroshi MATSUSHITAKenichi KadotaToshiyuki Aritake
    • G01R31/26
    • G05B19/41875G05B23/0229G05B2219/1112G05B2219/32222G05B2219/45031G05B2223/02Y02P90/22
    • A failure detecting method has inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting a plurality of region segments in the wafer, setting a region number for each of the region segments, calculating foreign substance density in each of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in each of the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process that is a cause of failure occurrence, based on the similarity.
    • 失败检测方法在晶片处理过程中,在每个处理过程之后输入通过异物检查产生的异物检查图,在晶片处理过程之后输入通过管芯分类测试创建的管芯分类图,设置多个 的区域段,根据异物检查图,设定各区域段的区域编号,计算各区域段中的异物密度,使用区域编号绘制异物密度, 计算异物检查图波形特征量,根据模具分类图计算每个区域段中的故障密度,并使用区域编号绘制故障密度,计算模具分类图波形特征量,计算相似度 异物检查图波形特征量和管芯分类图波形ch之间 基于相似性,确定作为故障发生的原因的处理过程。
    • 10. 发明申请
    • LINEAR PATTERN DETECTION METHOD AND APPARATUS
    • 线性图案检测方法和装置
    • US20090220142A1
    • 2009-09-03
    • US12393797
    • 2009-02-26
    • Hiroshi MATSUSHITAKenichi KadotaToshiyuki Aritake
    • Hiroshi MATSUSHITAKenichi KadotaToshiyuki Aritake
    • G06K9/00
    • G06K9/4604G06T7/0004G06T2207/20021G06T2207/30148
    • The present invention provides a linear pattern detection method which can extract and detect linear patterns distinguished by a microscopic defect distribution profile even if skipped measurements are taken. The linear pattern detection method acquires a defect map created based on results of defect inspection of a wafer; divides the defect map into a plurality of first segments; calculates a correlation coefficient of a point sequence in each of the first segments, the point sequence corresponding to a defect group contained in the first segments; calculates a total number of those first segments in which the correlation coefficient is equal to or larger than a first threshold; and determines that the wafer contains a linear pattern if the total number is equal to or larger than a second threshold.
    • 本发明提供一种线性图案检测方法,其可以提取和检测由微观缺陷分布轮廓区分的线性图案,即使进行了跳过的测量。 线性图案检测方法获取基于晶片的缺陷检查结果创建的缺陷图; 将缺陷图划分成多个第一段; 计算每个第一段中的点序列的相关系数,对应于包含在第一段中的缺陷组的点序列; 计算相关系数等于或大于第一阈值的那些第一段的总数; 并且如果总数等于或大于第二阈值,则确定晶片包含线性模式。