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1. 发明申请

US20070099810A1 Cleaning liquid and cleaning method 审中-公开
标题翻译：清洗液和清洗方法
公开(公告)号：US20070099810A1
公开(公告)日：2007-05-03
申请号：US11259256
申请日：2005-10-27
申请人： Hiroshi Matsunaga , Masaru Ohto , Hiroshi Yoshida , Eiko Kuwabara , Ming Fang , Lourdes Dominguez
发明人： Hiroshi Matsunaga , Masaru Ohto , Hiroshi Yoshida , Eiko Kuwabara , Ming Fang , Lourdes Dominguez
IPC分类号： C11D3/395 , C11D17/00
CPC分类号： C11D3/0073 , C11D3/044 , C11D3/43 , C11D7/06 , C11D7/5004
摘要： A cleaning liquid which comprises at least one selected from potassium hydroxide or sodium hydroxide in an amount of 0.01 to 10% by weight, water-soluble organic solvent in an amount of 5 to 80% by weight, a corrosion inhibitor at least one selected from the group consisting of group IX metal of the Periodic Table, group IX metal alloy and group XI metal of the Periodic Table in an amount of 0.0001% by weight and water. The present provides a cleaning liquid and a cleaning method both capable of removing photoresists or its deposits and attached articles on the surface of treated substances such as organosiloxane-based anti-reflection film, configuration protective coat or so without corroding the treated substances, particularly low dielectric constant film, group IX metals of the Periodic Table and their alloy, and group XI metals of the Periodic Table.
摘要翻译：一种清洗液，其含有0.01〜10重量％的氢氧化钾或氢氧化钠中的至少1种，5〜80重量％的水溶性有机溶剂，至少1种选自由元素周期表第IX族金属，第IX族金属合金和元素周期表第XI族金属组成的组为0.0001％（重量）和水。本发明提供一种能够除去光致抗蚀剂或其沉积物和附着物品的清洗液和清洁方法，例如在有机硅氧烷类防反射膜，构型保护层等的表面处理，而不会腐蚀处理物质，特别是低介电常数薄膜，元素周期表第IX族金属及其合金，以及元素周期表第XI族金属。

2. 发明申请

US20100029085A1 CLEANING COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：清洁组合物和生产半导体器件的方法
公开(公告)号：US20100029085A1
公开(公告)日：2010-02-04
申请号：US12530766
申请日：2008-03-06
申请人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
发明人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
IPC分类号： H01L21/306 , H01L21/308 , G03F7/42
CPC分类号： H01L21/31133 , C11D3/3947 , C11D7/06 , C11D7/36 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/02063
摘要： A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.
摘要翻译：一种用于在具有低介电层间绝缘膜和铜布线或铜合金布线的基板上依次层叠有机硅氧烷类薄膜和光致抗蚀剂层的半导体装置的清洗组合物，然后对其进行选择性曝光和显影处理该主体光致抗蚀剂层形成光致抗蚀剂图案，随后在使用该抗蚀剂图案作为掩模的同时对有机硅氧烷类薄膜和低介电层间绝缘膜进行干蚀刻处理，然后除去有机硅氧烷类薄膜，残留物通过干蚀刻处理产生的改性光致抗蚀剂，通过干蚀刻处理改性的改性光致抗蚀剂和位于比改性光致抗蚀剂低的层中的未改性光致抗蚀剂层，清洗组合物含有15〜20质量％的过氧化氢，0.0001 至0.003质量％的氨基聚亚甲基膦酸，为0.02〜0.5质量％氢氧化钾和水，pH为7.5至8.5。另外，提供了使用该被检体组合物的半导体装置的制造方法。

3. 发明授权

US07977292B2 Cleaning composition and process for producing semiconductor device 有权
标题翻译：清洁组合物和半导体器件制造工艺
公开(公告)号：US07977292B2
公开(公告)日：2011-07-12
申请号：US12530766
申请日：2008-03-06
申请人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
发明人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
IPC分类号： C11D7/18
CPC分类号： H01L21/31133 , C11D3/3947 , C11D7/06 , C11D7/36 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/02063
摘要： A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.
摘要翻译：一种用于在具有低介电层间绝缘膜和铜布线或铜合金布线的基板上依次层叠有机硅氧烷类薄膜和光致抗蚀剂层的半导体装置的清洗组合物，然后对其进行选择性曝光和显影处理该主体光致抗蚀剂层形成光致抗蚀剂图案，随后在使用该抗蚀剂图案作为掩模的同时对有机硅氧烷类薄膜和低介电层间绝缘膜进行干蚀刻处理，然后除去有机硅氧烷类薄膜，残留物通过干蚀刻处理产生的改性光致抗蚀剂，通过干蚀刻处理改性的改性光致抗蚀剂和位于比改性光致抗蚀剂低的层中的未改性光致抗蚀剂层，清洗组合物含有15〜20质量％的过氧化氢，0.0001 至0.003质量％的氨基聚亚甲基膦酸，为0.02〜0.5质量％氢氧化钾和水，pH为7.5至8.5。另外，提供了使用该被检体组合物的半导体装置的制造方法。

4. 发明授权

US09596124B2 Assistance device of network system 有权
标题翻译：网络系统辅助装置
公开(公告)号：US09596124B2
公开(公告)日：2017-03-14
申请号：US14005324
申请日：2011-03-23
申请人： Hiromi Sasaki , Hiroshi Yoshida , Takeshi Jinkawa , Masaki Namie , Hirohito Mizumoto , Yutaka Tahara , Shigenori Sawada
发明人： Hiromi Sasaki , Hiroshi Yoshida , Takeshi Jinkawa , Masaki Namie , Hirohito Mizumoto , Yutaka Tahara , Shigenori Sawada
IPC分类号： G06F15/16 , H04L12/24 , H04L12/40 , H04L12/403 , H04L29/12
CPC分类号： H04L41/04 , H04L12/40006 , H04L12/403 , H04L41/0853 , H04L41/0866 , H04L41/12 , H04L41/145 , H04L61/2038
摘要： A design assistance device includes: a design information storage section configured to store design information containing at least information of slave devices and information of a topology in a network system in accordance with a design created by a user; an actual configuration information generation section configured to generate actual configuration information containing at least the information of the slave devices and the information of the topology in the actual network system; a comparison section configured to compare the design information and the actual configuration information; and an output section configured to generate a comparison screen indicating the respective configurations of the designed network system and the actual network system along with their commonalities and differences and outputting the comparison screen to a display device. Thus, a technology can be provided which assists the user to easily compare the designed network configuration and the actual machine's network configuration.
摘要翻译：设计辅助装置包括：设计信息存储部分，被配置为根据由用户创建的设计，在网络系统中存储至少包含从设备信息和拓扑信息的设计信息; 实际配置信息生成部，被配置为生成至少包含所述从设备的信息和所述实际网络系统中的拓扑的信息的实际配置信息; 配置为比较设计信息和实际配置信息的比较部分; 以及输出部，其被配置为生成指示所设计的网络系统和实际网络系统的各自配置及其共同点和差异的比较屏幕，并将比较屏幕输出到显示设备。因此，可以提供一种技术，其帮助用户容易地比较设计的网络配置和实际机器的网络配置。

5. 发明授权

US09273370B2 Hot-rolled steel sheet, cold-rolled steel sheet, galvanized steel sheet, and methods of manufacturing the same 有权
标题翻译：热轧钢板，冷轧钢板，镀锌钢板及其制造方法
公开(公告)号：US09273370B2
公开(公告)日：2016-03-01
申请号：US13811902
申请日：2011-07-27
申请人： Nobuhiro Fujita , Kunio Hayashi , Riki Okamoto , Manabu Takahashi , Tetsuo Kishimoto , Hiroshi Yoshida
发明人： Nobuhiro Fujita , Kunio Hayashi , Riki Okamoto , Manabu Takahashi , Tetsuo Kishimoto , Hiroshi Yoshida
IPC分类号： C22C38/58 , C22C38/54 , C22C38/52 , C21D8/02 , C23C2/06 , C23C2/28 , C22C38/00 , C22C38/04 , B21B35/00 , C22C38/02 , C22C38/06 , C22C38/08 , C22C38/10 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/18 , C22C38/20 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/28 , C22C38/30 , C22C38/32 , C22C38/34 , C22C38/38 , C22C38/40 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/50 , C23C2/02 , C25D5/36 , C23C2/40
CPC分类号： C25D3/22 , B21B35/00 , B32B15/013 , C21D6/004 , C21D6/005 , C21D6/007 , C21D6/008 , C21D8/0205 , C21D8/0226 , C21D8/0236 , C21D8/0247 , C21D8/0263 , C21D8/0273 , C21D9/46 , C21D2201/05 , C21D2211/00 , C21D2211/001 , C21D2211/002 , C21D2211/005 , C21D2211/009 , C22C38/001 , C22C38/002 , C22C38/004 , C22C38/005 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/08 , C22C38/10 , C22C38/105 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/18 , C22C38/20 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/28 , C22C38/30 , C22C38/32 , C22C38/34 , C22C38/38 , C22C38/40 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/50 , C22C38/52 , C22C38/54 , C22C38/58 , C23C2/02 , C23C2/06 , C23C2/28 , C23C2/40 , C25D5/36
摘要： A hot-rolled steel sheet has an average value of the X-ray random intensity ratio of a {100} to {223} orientation group at least in a sheet thickness central portion that is in a sheet thickness range of ⅝ to ⅜ from a steel sheet surface of 1.0 to 6.0, an X-ray random intensity ratio of a {332} crystal orientation of 1.0 to 5.0, rC which is an r value in a direction perpendicular to a rolling direction of 0.70 to 1.10, and r30 which is an r value in a direction that forms an angle of 30° with respect to the rolling direction of 0.70 to 1.10.
摘要翻译：热轧钢板至少在片材厚度范围的板厚中央部具有{100} <011>〜{223} <110>取向基团的X射线随机强度比的平均值从1.0〜6.0的钢板表面的⅝至⅝，{332} <113>晶体取向的X射线随机强度比为1.0〜5.0，rC为与轧制方向垂直的方向的r值为0.70〜1.10，r30为相对于轧制方向为30°的方向的r值，为0.70〜1.10。

6. 发明授权

US09234861B2 Electrode for electrochemical measurement, electrolysis cell for electrochemical measurement, analyzer for electrochemical measurement, and methods for producing same 有权
标题翻译：电化学测定用电极，电化学测定用电解槽，电化学测定用分析装置及其制造方法
公开(公告)号：US09234861B2
公开(公告)日：2016-01-12
申请号：US13992514
申请日：2011-12-06
申请人： Hiroshi Kanemoto , Haruo Akahoshi , So Oguchi , Kenta Imai , Taku Sakazume , Hiroshi Yoshida
发明人： Hiroshi Kanemoto , Haruo Akahoshi , So Oguchi , Kenta Imai , Taku Sakazume , Hiroshi Yoshida
IPC分类号： G01N27/30 , C25B11/04 , H01M4/92 , G01N27/327 , G01N33/49
CPC分类号： G01N27/307 , C25B11/0426 , C25B11/0431 , C25B11/0473 , C25B11/0484 , C25F3/16 , C25F7/00 , G01N27/30 , G01N27/3271 , G01N27/403 , G01N33/4915 , H01M4/92 , H01M4/921 , H01M4/923 , H01M4/925
摘要： Provided are an electrode, an electrolysis cell, and an electrochemical analyzer that improve the long-term stability of analysis data. A working electrode, a counter electrode, and reference electrode are disposed in an electrolysis cell. The working electrode is obtained by forming a lead wire in a composite material having platinum or a platinum alloy as a base material, in which a metal oxide is dispersed, or in a laminated material obtained by laminating a valve metal and platinum such that the cross sectional crystal texture in the thickness direction of the platinum is formed in layers and the thickness of each layer of the platinum is 5 micrometers or less. The metal oxide is selected from among zirconium oxide, tantalum oxide, and niobium oxide, and the metal oxide content of the platinum or the platinum alloy is 0.005 to 1 wt % in terms of the zirconium, tantalum, or niobium metal.
摘要翻译：提供了提高分析数据的长期稳定性的电极，电解槽和电化学分析装置。工作电极，对电极和参比电极设置在电解槽中。工作电极是通过在具有铂或铂合金作为其中分散有金属氧化物的基材的复合材料中形成引线而获得的，或者通过层压阀金属和铂得到的层压材料，使得交叉铂的厚度方向上的截面晶体结构形成层，铂层的厚度为5微米以下。金属氧化物选自氧化锆，氧化钽和氧化铌，铂或铂合金的金属氧化物含量以锆，钽或铌金属换算为0.005〜1重量％。

7. 发明授权

US09064616B2 Conductive paste 有权
标题翻译：导电胶
公开(公告)号：US09064616B2
公开(公告)日：2015-06-23
申请号：US14005994
申请日：2012-04-05
申请人： Hiroshi Yoshida , Naoto Shindo , Tadashi Kanasaku , Shoko Masuda
发明人： Hiroshi Yoshida , Naoto Shindo , Tadashi Kanasaku , Shoko Masuda
IPC分类号： H01B1/22 , H01L31/00 , C03C8/18 , C09D5/24 , C03C8/02 , H01L31/0224
CPC分类号： H01B1/22 , C03C3/122 , C03C8/02 , C03C8/18 , C09D5/24 , H01L31/022425 , Y02E10/50
摘要： A conductive paste includes a conductive powder containing at least one of copper and nickel as a main component, a glass frit, and an organic vehicle, wherein the glass frit is a tellurium-based glass frit that essentially does not contain any lead component and contains tellurium as a network former in an amount of 35 to 70 mol % in terms of oxide, the tellurium-based glass frit containing silver as an essential component. The above conductive paste can provide favorable characteristics and favorably be used in the formation of light-receiving surface electrodes of a solar cell element even when the conductive paste includes one or more of copper and nickel as its conductive component.
摘要翻译：导电浆料包括含有铜和镍中的至少一种作为主要成分的导电粉末，玻璃料和有机载体，其中玻璃料是基本上不含任何铅成分的碲基玻璃料，碲作为网络前体，以氧化物计为35〜70摩尔％，以含有银为主要成分的碲系玻璃料。即使当导电浆料包括一种或多种铜和镍作为其导电组分时，上述导电浆料可以提供有利的特性，并且有利地用于形成太阳能电池元件的光接收表面电极。

8. 发明授权

US08867681B2 Transmission system, transmission device, and clock synchronization method 有权
标题翻译：传输系统，传输设备和时钟同步方法
公开(公告)号：US08867681B2
公开(公告)日：2014-10-21
申请号：US13248215
申请日：2011-09-29
申请人： Hiroshi Yoshida
发明人： Hiroshi Yoshida
IPC分类号： H04L7/00 , G06F1/12 , H04J3/06
CPC分类号： G06F1/12 , H04J3/0685
摘要： A transmission system which couples a plurality of transmission devices to a control device includes a first transmission device which is one of the plurality of transmission devices; a first calculation circuit which calculates a first difference value indicating a frequency difference value between a common clock supplied from the control device and a first clock as a clock used in the first transmission device; and a transmitter which reports the first difference value to a second transmission device other than the first transmission device, wherein the second transmission device comprises: a second calculation circuit which calculates a second difference value indicating a frequency difference value between the common clock and a second clock used in the second transmission device, and a frequency controller which controls an oscillator generating the second clock so that the second difference value approaches the first difference value reported from the first transmission device.
摘要翻译：将多个传输设备耦合到控制设备的传输系统包括作为多个传输设备之一的第一传输设备; 第一计算电路，其计算指示从所述控制装置提供的公共时钟与所述第一时钟之间的频率差值作为所述第一发送装置中使用的时钟的第一差值; 以及向所述第一发送装置以外的第二发送装置报告所述第一差分值的发送机，其中，所述第二发送装置包括：第二计算电路，其计算表示所述公共时钟与第二发送装置之间的频率差值的第二差分值在第二发送装置中使用的时钟，以及频率控制器，其控制产生第二时钟的振荡器，使得第二差值接近从第一发送装置报告的第一差值。

9. 发明申请

US20140133316A1 Parameter Estimation Device, Parameter Estimation Method, and Parameter Estimation Program 有权
标题翻译：参数估计装置，参数估计方法和参数估计方案
公开(公告)号：US20140133316A1
公开(公告)日：2014-05-15
申请号：US14129034
申请日：2012-06-12
申请人： Hiroshi Yoshida
发明人： Hiroshi Yoshida
IPC分类号： H04L12/26
CPC分类号： H04L43/0888 , H04L43/04 , H04L47/25
摘要： A parameter estimation device 600 includes: a communication throughput acquiring part 601 for acquiring communication throughput that is an amount of data transmitted per unit time; and a function specification parameter estimating part 602 for estimating a function specification parameter for specifying a probability density function where communication throughput at a second time point later than a first time point is a random variable, based on the communication throughput acquired by the first time point.
摘要翻译：参数估计装置600包括：通信吞吐量获取部601，用于获取作为每单位时间发送的数据量的通信吞吐量; 以及功能指定参数估计部602，用于基于第一时间点获取的通信吞吐量，估计用于指定在第一时间点之后的第二时间点的通信吞吐量为随机变量的概率密度函数的功能指定参数。

10. 发明授权

US08628869B2 Magnetic media and magnetic recording devices using fluorine compounds 有权
标题翻译：使用氟化合物的磁介质和磁记录装置
公开(公告)号：US08628869B2
公开(公告)日：2014-01-14
申请号：US13361896
申请日：2012-01-30
申请人： Mina Amo , Katsumi Mabuchi , Hiroshi Yoshida , Bruno Marchon , Qing Dai
发明人： Mina Amo , Katsumi Mabuchi , Hiroshi Yoshida , Bruno Marchon , Qing Dai
IPC分类号： G11B5/66
CPC分类号： C07D249/18 , C07D403/12 , C07D403/14 , G11B5/725
摘要： According to one embodiment, a lubricant includes a perfluoropolyether having a chemical structure of: wherein Rf is at least one of: —CF2O(CF2CF2O)m(CF2O)nCF2— and —CF2CF2O(CF2CF2CF2O)kCF2CF2—, with m representing 0 or a positive integer, n representing 0 or a positive integer, and k representing 0 or a positive integer, and wherein R1 to R4 are selected from a group consisting of —H or with at least one of R1 to R4 being
摘要翻译：根据一个实施方案，润滑剂包括具有以下化学结构的全氟聚醚：其中Rf为至少一种：-CF 2 O（CF 2 CF 2 O）m（CF 2 O）n CF 2 - 和-CF 2 CF 2 O（CF 2 CF 2 CF 2 O）k CF 2 CF 2 - ，其中m表示0或正整数，n表示0或正整数，k表示0或正整数，并且其中R 1至R 4选自-H或与R 1至R 4中的至少一个为

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