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1. 发明授权

US07572758B2 Cleaning liquid and cleaning method 有权
标题翻译：清洗液和清洗方法
公开(公告)号：US07572758B2
公开(公告)日：2009-08-11
申请号：US11202145
申请日：2005-08-12
申请人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
发明人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
IPC分类号： H01L21/02
CPC分类号： H01L21/02063 , C11D3/042 , C11D3/044 , C11D3/046 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32138
摘要： A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.
摘要翻译：提供了包含含有硝酸，硫酸，氟化合物和碱性化合物的水溶液的清洗液。清洗液中的水的浓度为80重量％以上，清洗液的pH值为1〜3以下。清洗液对从半导体装置的干式蚀刻工序中形成的蚀刻残留物去除是有效的和显示装置，而不会氧化和腐蚀其金属布线，特别是铜布线和绝缘膜的材料。

2. 发明授权

US09334161B2 Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same 有权
标题翻译：用于抑制细金属结构的图案塌陷的处理液和使用其制造精细金属结构的方法
公开(公告)号：US09334161B2
公开(公告)日：2016-05-10
申请号：US13499462
申请日：2010-09-29
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01B13/00 , B44C1/22 , B81C1/00 , C09K13/00 , C23G1/26 , H01L21/02
CPC分类号： B81C1/0092 , C09K13/00 , C23G1/26 , H01L21/02057
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物碳原子，以及使用其制造精细金属结构体的方法。

3. 发明申请

US20130165365A1 TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID 有权
标题翻译：用于抑制微结构中的图案皱纹的处理液和使用合适处理液的微结构制造方法
公开(公告)号：US20130165365A1
公开(公告)日：2013-06-27
申请号：US13820899
申请日：2011-07-14
申请人： Hiroshi Matsunaga , Masaru Ohto
发明人： Hiroshi Matsunaga , Masaru Ohto
IPC分类号： C11D7/32
CPC分类号： H01L21/0206 , B81C1/00825 , C11D7/3209 , C11D7/3281
摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.
摘要翻译：提供了一种用于抑制显微组织的图案塌陷的处理液体，其包括至少一种选自包含具有12,14或16个碳原子的烷基的咪唑鎓卤化物的化合物，含有14个或16个碳原子和含有16或18个碳原子的烷基的卤化铵和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。

4. 发明授权

US08980812B2 Treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid 有权
标题翻译：用于抑制微结构中的图案塌陷的处理液，以及使用所述处理液的微结构制造方法
公开(公告)号：US08980812B2
公开(公告)日：2015-03-17
申请号：US13820899
申请日：2011-07-14
申请人： Hiroshi Matsunaga , Masaru Ohto
发明人： Hiroshi Matsunaga , Masaru Ohto
IPC分类号： C11D7/32 , H01L21/02 , B81C1/00
CPC分类号： H01L21/0206 , B81C1/00825 , C11D7/3209 , C11D7/3281
摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.
摘要翻译：提供了一种用于抑制显微组织的图案塌陷的处理液体，其包括至少一种选自包含具有12,14或16个碳原子的烷基的咪唑鎓卤化物的化合物，含有14个或16个碳原子和含有16或18个碳原子的烷基的卤化铵和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。

5. 发明申请

US20120205345A1 TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME 审中-公开
标题翻译：用于防止金属结构体中图案褶皱的处理方法及其使用金属结构体的生产工艺
公开(公告)号：US20120205345A1
公开(公告)日：2012-08-16
申请号：US13503055
申请日：2010-10-19
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： C23F1/00 , C11D3/20
CPC分类号： H01L21/02057 , B81B2203/0109 , B81B2203/0361 , B81C1/00849 , H01L21/31111
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制细金属结构的图案塌陷的处理液，其含有具有含有烷基和烯基中的任何一个的烃基的图案塌陷抑制剂，它们都可部分或全部被氟原子，并且含有氧化乙烯结构体，以及使用其制造精细金属结构体的方法。

6. 发明申请

US20120181249A1 PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME 有权
标题翻译：用于抑制精细金属结构的图案的处理液和使用其制造精细金属结构的方法
公开(公告)号：US20120181249A1
公开(公告)日：2012-07-19
申请号：US13499462
申请日：2010-09-29
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01L21/306 , C23F1/14 , G03F7/42 , C23F1/12
CPC分类号： B81C1/0092 , C09K13/00 , C23G1/26 , H01L21/02057
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物碳原子，以及使用其制造精细金属结构体的方法。

7. 发明申请

US20120135604A1 PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME 有权
标题翻译：用于抑制精细金属结构的图案的处理液和使用其制造精细金属结构的方法
公开(公告)号：US20120135604A1
公开(公告)日：2012-05-31
申请号：US13388462
申请日：2010-07-21
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01L21/306 , C09K3/00 , C07F9/09
CPC分类号： H01L21/02057 , B81C1/00928
摘要： There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same.
摘要翻译：提供了能够抑制诸如半导体器件和微机械的精细金属结构的图案崩溃的处理液以及使用其的精细金属结构的制造方法。用于抑制细金属结构的图案塌陷的处理液含有磷酸酯和/或聚氧化烯醚磷酸酯，以及精细金属结构体的制造方法。

8. 发明授权

US07977292B2 Cleaning composition and process for producing semiconductor device 有权
标题翻译：清洁组合物和半导体器件制造工艺
公开(公告)号：US07977292B2
公开(公告)日：2011-07-12
申请号：US12530766
申请日：2008-03-06
申请人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
发明人： Hiroshi Matsunaga , Masaru Ohto , Hideo Kashiwagi , Hiroshi Yoshida
IPC分类号： C11D7/18
CPC分类号： H01L21/31133 , C11D3/3947 , C11D7/06 , C11D7/36 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/02063
摘要： A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.
摘要翻译：一种用于在具有低介电层间绝缘膜和铜布线或铜合金布线的基板上依次层叠有机硅氧烷类薄膜和光致抗蚀剂层的半导体装置的清洗组合物，然后对其进行选择性曝光和显影处理该主体光致抗蚀剂层形成光致抗蚀剂图案，随后在使用该抗蚀剂图案作为掩模的同时对有机硅氧烷类薄膜和低介电层间绝缘膜进行干蚀刻处理，然后除去有机硅氧烷类薄膜，残留物通过干蚀刻处理产生的改性光致抗蚀剂，通过干蚀刻处理改性的改性光致抗蚀剂和位于比改性光致抗蚀剂低的层中的未改性光致抗蚀剂层，清洗组合物含有15〜20质量％的过氧化氢，0.0001 至0.003质量％的氨基聚亚甲基膦酸，为0.02〜0.5质量％氢氧化钾和水，pH为7.5至8.5。另外，提供了使用该被检体组合物的半导体装置的制造方法。

9. 发明申请

US20100051066A1 COMPOSITION FOR REMOVING RESIDUE FROM WIRING BOARD AND CLEANING METHOD 审中-公开
标题翻译：用于从接线板上除去残留物的组合物和清洁方法
公开(公告)号：US20100051066A1
公开(公告)日：2010-03-04
申请号：US12158077
申请日：2006-12-14
申请人： Eiko Kuwabara , Hideo Kashiwagi , Hiroshi Matsunaga , Masaru Ohto
发明人： Eiko Kuwabara , Hideo Kashiwagi , Hiroshi Matsunaga , Masaru Ohto
IPC分类号： C23G1/02 , C11D7/32
CPC分类号： H05K3/26 , C11D3/3947 , C11D7/3281 , C11D11/0047 , G03F7/423 , G03F7/425 , H05K3/0041 , H05K3/388 , H05K2203/0796 , H05K2203/124
摘要： A composition for removing a residue from a wiring board containing an oxidizing agent and an azole compound and having a pH of from 1 to 7 and a cleaning method of a wiring board for removing a residue after dry etching by using this composition are provided. By using the composition for removing a residue of the present invention, in manufacturing a wiring board, residues remaining after dry etching which are derived from a resist or metals can be effectively removed without corroding titanium or titanium alloys with high corrosiveness. In particular, a semiconductor device using a wiring board containing titanium or titanium alloys can be efficiently manufactured.
摘要翻译：提供一种用于从含有氧化剂和唑类化合物并且pH为1至7的布线板除去残余物的组合物，以及通过使用该组合物在干法蚀刻之后除去残留物的布线板的清洁方法。通过使用除去本发明的残渣的组合物，在制造布线板时，可以有效地除去从抗蚀剂或金属衍生的干蚀刻后剩余的残留物，而不会腐蚀具有高腐蚀性的钛或钛合金。特别地，可以有效地制造使用含有钛或钛合金的布线板的半导体装置。

10. 发明申请

US20060040838A1 Cleaning liquid and cleaning method 有权
公开(公告)号：US20060040838A1
公开(公告)日：2006-02-23
申请号：US11202145
申请日：2005-08-12
申请人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
发明人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
IPC分类号： C11D7/32 , C23G1/00
CPC分类号： H01L21/02063 , C11D3/042 , C11D3/044 , C11D3/046 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32138
摘要： A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.

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