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    • 3. 发明授权
    • Imaging device
    • 成像设备
    • US08110860B2
    • 2012-02-07
    • US13104673
    • 2011-05-10
    • Tadao InoueKatsuyoshi YamamotoHiroshi Kobayashi
    • Tadao InoueKatsuyoshi YamamotoHiroshi Kobayashi
    • H01L31/062
    • H01L27/14603H01L27/14609H01L27/14621H01L27/14627H01L27/1463H01L27/14643H01L27/14645H01L31/03529H04N5/361Y02E10/50
    • First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
    • 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中,通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷,从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中,耗尽层的厚度增加,这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度,而不会增加暗电流噪声。
    • 4. 发明授权
    • Imaging device
    • 成像设备
    • US07964902B2
    • 2011-06-21
    • US11861691
    • 2007-09-26
    • Tadao InoueKatsuyoshi YamamotoHiroshi Kobayashi
    • Tadao InoueKatsuyoshi YamamotoHiroshi Kobayashi
    • H01L31/062
    • H01L27/14603H01L27/14609H01L27/14621H01L27/14627H01L27/1463H01L27/14643H01L27/14645H01L31/03529H04N5/361Y02E10/50
    • First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
    • 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中,通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷,从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中,耗尽层的厚度增加,这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度,而不会增加暗电流噪声。
    • 5. 发明授权
    • Image sensor providing improved image quality
    • 图像传感器提供更好的图像质量
    • US07170556B2
    • 2007-01-30
    • US10618851
    • 2003-07-15
    • Masatoshi KokubunToshitaka MizuguchiJun FunakoshiHiroshi KobayashiKatsuyosi Yamamoto
    • Masatoshi KokubunToshitaka MizuguchiJun FunakoshiHiroshi KobayashiKatsuyosi Yamamoto
    • H04N5/217
    • H04N5/3598
    • An image sensor for capturing image, has: a plurality of pixels arranged in a matrix each including a photoelectric conversion element for generating current according to received light intensity and a reset transistor for resetting a node of the photoelectric conversion element to a reset potential; and a sample hold circuit for sample holding a pixel potential according to the potential of the node of the pixel. And the sample hold circuit outputs the differential potential, between a first pixel potential at an end of the integration period after a first reset operation of the pixel and a second pixel potential at an end of a reset noise read period after a second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit, when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.
    • 一种用于拍摄图像的图像传感器,具有:以矩阵形式排列的多个像素,每个像素包括根据接收光强度产生电流的光电转换元件和用于将光电转换元件的节点复位到复位电位的复位晶体管; 以及用于根据像素的节点的电位保持像素电位的样本的采样保持电路。 并且采样保持电路在第一复位操作之后的积分周期结束时的第一像素电位和第二复位操作之后的复位噪声读取周期结束时的第二像素电位之间输出差分电位 积分期,作为像素信号。 此外,在采样保持电路中,当复位噪声读取周期期间的第二像素电位超过预定阈值电平时,将第二像素电位设置为预定参考电位。