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1. 发明申请

US20100269963A1 COPPER ALLOY MATERIAL EXCELLENT IN STRENGTH, BENDING WORKABILITY AND STRESS RELAXATION RESISTANCE, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：铜合金材料具有优异的强度，弯曲性和耐应力松弛性及其制造方法
公开(公告)号：US20100269963A1
公开(公告)日：2010-10-28
申请号：US12740979
申请日：2008-10-31
申请人： Kiyoshige Hirose , Kuniteru Mihara , Hiroshi Kaneko , Tatsuhiko Eguchi
发明人： Kiyoshige Hirose , Kuniteru Mihara , Hiroshi Kaneko , Tatsuhiko Eguchi
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： C22C9/06 , C22F1/08
摘要： A copper alloy material according to the present invention is characterized in that the same comprises: Ni between 2.8 mass % and 5.0 mass %; Si between 0.4 mass % and 1.7 mass %; S of which content is limited to less than 0.005 mass %; and the balance of the copper alloy material is composed of copper and unavoidable impurity, wherein a proof stress is stronger than or equal to 800 MPa, and the same is superior in bending workability and in stress relaxation resistance.
摘要翻译：根据本发明的铜合金材料的特征在于，其包含：2.8质量％至5.0质量％的Ni; Si在0.4质量％至1.7质量％之间; S含量限制在0.005质量％以下; 铜合金材料的平衡由铜和不可避免的杂质构成，其中耐应力为800MPa以上，弯曲加工性和耐应力松弛性优异。

2. 发明申请

US20070131321A1 Copper alloy for electric and electronic instruments 审中-公开
标题翻译：铜合金电器电子仪器
公开(公告)号：US20070131321A1
公开(公告)日：2007-06-14
申请号：US11607103
申请日：2006-12-01
申请人： Hiroshi Kaneko , Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Hiroshi Kaneko , Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22F1/08 , H01H1/025 , H01R13/03 , H01R13/24
摘要： A copper alloy for electric and electronic instruments, containing Ni of 1 to 3 mass %, Ti of 0.2 to 1.2 mass %, any one or both of Mg and Zr of 0.02 to 0.2 mass %, and Zn of 0.1 to 1 mass %, with the balance being Cu and unavoidable impurities, in which the copper alloy contains at least one of an intermetallic compound comprising Ni, Ti and Mg, an intermetallic compound comprising Ni, Ti and Zr, or an intermetallic compound comprising Ni, Ti, Mg and Zr, and the copper alloy has a stress relaxation rate of 20% or less after holding the alloy at 150° C. for 1,000 hours; and a method of producing the copper alloy for electric and electronic instruments.
摘要翻译：一种电气电子仪器用铜合金，含有1〜3质量％的Ni，0.2〜1.2质量％的Ti，0.02〜0.2质量％的Mg和Zr中的任一种或两者，0.1〜1质量％的Zn，余量为Cu和不可避免的杂质，其中铜合金含有包含Ni，Ti和Mg的金属间化合物中的至少一种，包含Ni，Ti和Zr的金属间化合物，或包含Ni，Ti，Mg的金属间化合物和 Zr，并且在150℃下保持合金1000小时后，铜合金的应力松弛率为20％以下。以及制造电气电子仪器用铜合金的方法。

3. 发明授权

US08287669B2 Copper alloy for electric and electronic equipments 有权
标题翻译：铜合金电气电子设备
公开(公告)号：US08287669B2
公开(公告)日：2012-10-16
申请号：US12130203
申请日：2008-05-30
申请人： Hiroshi Kaneko , Tatsuhiko Eguchi , Kuniteru Mihara , Kiyoshige Hirose
发明人： Hiroshi Kaneko , Tatsuhiko Eguchi , Kuniteru Mihara , Kiyoshige Hirose
IPC分类号： C22C9/06 , C22C9/10
CPC分类号： C22C9/06 , C22C9/10 , C22F1/08 , H01R13/03
摘要： A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.
摘要翻译：一种用于电气和电子设备的铜合金，其含有0.5至4.0质量％的Ni，0.5至2.0质量％的Co和0.3至1.5质量％的Si，余量为铜和不可避免的杂质，其中R { 200}为0.3以上，其中R {200}是来自以下衍射强度的{200}面的衍射强度的比例，并且由R {200} = I {200} /（I {111 } {I} {I} {I} {I} {I} {I} {I}} {I} {111}是来自{111}面的衍射强度，I {200}是来自{200}面的衍射强度， 220}是{220}面的衍射强度，I {311}是来自{311}面的衍射强度，各自在材料表面。

4. 发明申请

US20110038753A1 COPPER ALLOY SHEET MATERIAL 审中-公开
标题翻译：铜合金材料
公开(公告)号：US20110038753A1
公开(公告)日：2011-02-17
申请号：US12741309
申请日：2008-11-05
申请人： Hiroshi Kaneko , Kiyoshige Hirose , Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Hiroshi Kaneko , Kiyoshige Hirose , Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , B21B3/00 , B21B2003/005 , C22C9/04 , C22F1/08
摘要： A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %.
摘要翻译：一种铜合金板材，其拉伸强度为730-820MPa，至少含有镍（Ni）和硅（Si），其余为铜（Cu）和不可避免的杂质。当片材具有180°紧弯曲的形状，并且该片材的宽度和厚度分别由W（单位：mm）和T（单位：mm）表示时，W和T的乘积为0.16或减。优选地，片材由含有1.8-3.3质量％的镍，0.4质量％的硅和0.01-0.5质量％的铬（Cr）的合金构成，其余为铜和不可避免的杂质。片材还可以包含以下中的一种或多种：选自锡（Sn），镁（Mg），银（Ag），锰（Mn），钛（Ti），铁（Fe）和磷 P），总量为0.01-1质量％; 0.01-10质量％的锌（Zn），钴（Co）为0.01〜1.5质量％。

5. 发明申请

US20100193092A1 COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：电气/电子设备用铜合金及其制造方法
公开(公告)号：US20100193092A1
公开(公告)日：2010-08-05
申请号：US12593024
申请日：2008-03-26
申请人： Ryosuke Matsuo , Tatsuhiko Eguchi , Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
发明人： Ryosuke Matsuo , Tatsuhiko Eguchi , Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
IPC分类号： C22F1/08 , C22C9/06
CPC分类号： C22C9/06 , B03C5/005 , B03C5/022 , C22C9/00 , C22F1/00 , C22F1/08 , H01R13/03
摘要： A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 μm and not larger than 20 μm, and a standard deviation of the crystalline grain diameter is not larger than 10 μm.
摘要翻译：根据本发明的用于电气和电子设备的铜合金的特征在于，用于电气和电子设备的铜合金包括：1.5质量％至5.0质量％的镍（Ni）; 硅（Si）在0.4质量％至1.5质量％之间; 和由Cu形成的剩余部分和不可避免的杂质，Ni / Si之间的镍（Ni）和硅（Si）的质量比不小于2并且不大于7，平均晶粒直径不小于 2μm且不大于20μm，晶粒直径的标准偏差不大于10μm。

6. 发明申请

US20100170595A1 COPPER ALLOY MATERIAL, AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：铜合金材料及其生产方法
公开(公告)号：US20100170595A1
公开(公告)日：2010-07-08
申请号：US12593402
申请日：2008-03-28
申请人： Hiroshi Kaneko , Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Hiroshi Kaneko , Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22F1/08 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/06 , C22C9/10
CPC分类号： C22C9/00 , C22C9/06 , C22F1/08
摘要： A copper alloy material according to the present invention is characterized in that the copper alloy material includes: an element X between 0.1% and 4% by mass, in which the element X represents one transition element or not less than two elements selected from Ni, Fe, Co and Cr; an element Y between 0.01% and 3% by mass, in which the element Y represents one element or not less than two elements selected from Ti, Si, Zr and Hf; and a remaining portion to be comprised of copper and an unavoidable impurity, wherein the copper alloy material has an electrical conductivity of not less than 50% IACS, an yield strength of not less than 600 MPa, and a stress relaxation rate of not higher than 20% as to be measured after the same is maintained for 1000 hours at a state under applying a stress of 80% of the yield strength.
摘要翻译：根据本发明的铜合金材料的特征在于，铜合金材料包括：元素X为0.1〜4质量％，其中元素X表示一个过渡元素或不少于两个选自Ni， Fe，Co和Cr; 元素Y在0.01质量％至3质量％之间，其中元素Y表示一种元素或不少于两种选自Ti，Si，Zr和Hf的元素; 以及由铜和不可避免的杂质构成的剩余部分，其中所述铜合金材料具有不小于50％IACS的导电率，不低于600MPa的屈服强度和不高于在施加80％屈服强度的应力的状态下，将其保持1000小时后，测定20％。

7. 发明授权

US07947133B2 Copper alloy strip material for electrical/electronic equipment and process for producing the same 有权
标题翻译：用于电气/电子设备的铜合金带材及其制造方法
公开(公告)号：US07947133B2
公开(公告)日：2011-05-24
申请号：US12310910
申请日：2007-09-12
申请人： Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/08
摘要： A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 μm to 2 μm, the intermetallic compound B has a compound diameter of 0.05 μm to less than 0.3 μm, and the intermetallic compound C has a compound diameter of more than 0.001 μm to less than 0.05 μm.
摘要翻译：用于电气/电子设备的铜合金带材包括含有2.0至5.0质量％的Ni，0.43至1.5质量％的Si以及由Cu形成的剩余组分和不可避免的杂质的铜合金。包含总量为50质量％以上的包含Ni和Si的金属间化合物A，B和C的三种类型。金属间化合物A的化合物直径为0.3μm〜2μm，金属间化合物B的化合物直径为0.05〜小于0.3μm，金属间化合物C的化合物直径大于0.001μm〜小于0.05 μm。

8. 发明申请

US20090257909A1 Copper alloy strip material for electrical/electronic equipment and process for producing the same 有权
标题翻译：用于电气/电子设备的铜合金带材及其制造方法
公开(公告)号：US20090257909A1
公开(公告)日：2009-10-15
申请号：US12310910
申请日：2007-09-12
申请人： Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/08
摘要： A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 μm to 2 μm, the intermetallic compound B has a compound diameter of 0.05 μm to less than 0.3 μm, and the intermetallic compound C has a compound diameter of more than 0.001 μm to less than 0.05 μm.
摘要翻译：用于电气/电子设备的铜合金带材包括含有2.0至5.0质量％的Ni，0.43至1.5质量％的Si以及由Cu形成的剩余组分和不可避免的杂质的铜合金。包含总量为50质量％以上的包含Ni和Si的金属间化合物A，B和C的三种类型。金属间化合物A的化合物直径为0.3〜2μm，金属间化合物B的化合物直径为0.05〜小于0.3μm，金属间化合物C的化合物直径大于0.001μm至小于0.05 妈妈

9. 发明申请

US20100203354A1 FLATTED MATERIAL 审中-公开
标题翻译：平纹材料
公开(公告)号：US20100203354A1
公开(公告)日：2010-08-12
申请号：US12524203
申请日：2008-01-25
申请人： Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： B32B15/01 , C22C9/04 , C22C9/02
CPC分类号： C22C9/02 , B32B15/01 , C22C9/00 , C22C9/04 , C22F1/00 , C22F1/08 , Y10T428/12715
摘要： Disclosed is a flatted material produced by conducting cold flatting of copper alloy including 0.1-1.0 mass % of Cu, 0.05-1.5 mass % of Sn, and 0.05-1.5 mass % of Zn, and comprising residue Cu and unavoidable impurities. In the flatted material, both of the stress relaxation rates in a direction parallel to the flatting direction and a direction perpendicular to the flatting direction are 50% or less as measured by an insertion type stress relaxation test at 150° C. after 1,000 hours.
摘要翻译：公开了通过进行铜合金的冷平坦化而制造的扁平材料，其包含Cu：0.1〜1.0质量％，Sn：0.05〜1.5质量％，Zn：0.05〜1.5质量％，且包含残渣Cu和不可避免的杂质。在平坦化材料中，通过1000小时后的150℃下的插入型应力松弛试验测定，平行于平坦化方向的方向和垂直于平坦化方向的方向之间的应力松弛率均为50％以下。

10. 发明申请

US20050263218A1 Copper alloy 审中-公开
标题翻译：铜合金
公开(公告)号：US20050263218A1
公开(公告)日：2005-12-01
申请号：US11135289
申请日：2005-05-24
申请人： Nobuyuki Tanaka , Tatsuhiko Eguchi , Kuniteru Mihara
发明人： Nobuyuki Tanaka , Tatsuhiko Eguchi , Kuniteru Mihara
IPC分类号： C22C9/06
CPC分类号： C22C9/06
摘要： A copper alloy for electronic machinery and tools, containing Ni 2.0 to 4.5 mass %, and Si 0.3 to 1.0 mass %, with the balance being Cu and unavoidable impurities, which satisfies the following expression: I{311}×A/(I{311}+I{220}+I{200})
摘要翻译：含有Ni 2.0〜4.5质量％的Ni的电子机械用工具用铜合金，Si为0.3〜1.0质量％，余量为Cu和不可避免的杂质，满足以下表达式：＆lt;线内配方说明=“ 在线公式“end =”lead“？> I {311} xA /（I {311} + I {220} + I {200}）<1.5 <？in-line-formula description = “end =”tail“？>其中I {311}表示在片材表面的{311}平面的X射线衍射强度; I {220}表示在片材表面的{220}平面的X射线衍射强度; I {200}表示来自板表面的{200}平面的X射线衍射强度; A（mum）表示晶粒尺寸，具有良好的弯曲性。

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