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    • 2. 发明授权
    • Process for the preparation of polyether oligomer containing reactive silicon group
    • 制备含有反应性硅基团的聚醚低聚物的方法
    • US06541593B1
    • 2003-04-01
    • US09530921
    • 2000-06-14
    • Hideharu JyonoHidetoshi OdakaHiroshi AndoHiroshi IwakiriHiroshi ItoFumio Kawakubo
    • Hideharu JyonoHidetoshi OdakaHiroshi AndoHiroshi IwakiriHiroshi ItoFumio Kawakubo
    • C07F702
    • C08G65/336
    • A process for producing a reactive silicon group-containing polyether oligomer, which comprises reacting (a) a polyether oligomer the backbone chain of which comprises a polyether and which contains in a side chain or at a terminus of its molecule at least one unsaturated group of the following general formula (1): H2C═C(R1)—R2—O—  (1) (wherein R1 represents a hydrocarbon group of not more than 10 carbon atoms; R2 represents a divalent organic group of 1 to 20 carbon atoms which contains in a side chain or at a terminus of its molecule at least one atomic species selected from the group consisting of hydrogen, oxygen and nitrogen as its constituent atom or atoms) or the general formula (2): HC(R1)═CH—R2—O—  (2) (wherein R1 represents a hydrocarbon group of not more than 10 carbon atoms; R2 represents a divalent organic group of 1 to 20 carbon atoms which contains at least one atomic species selected from the group consisting of hydrogen, oxygen and nitrogen as its constituent atom or atoms), with (b) a reactive silicon group-containing compound, (c) in the presence of a Group VIII transition metal catalyst to thereby introduce the reactive silicon group into said oligomer (a).
    • 一种制备含反应性含硅基团的聚醚低聚物的方法,其包括使(a)聚醚低聚物的主链包含聚醚并在其分子的侧链或末端含有至少一个不饱和基团 下述通式(1):(其中,R1表示碳原子数为10以下的烃基),R2表示碳原子数为1〜20的二价有机基团,至少在分子的侧链或末端含有 一种选自氢,氧和氮作为其构成原子或原子的原子)或通式(2):(其中R1表示不大于10个碳原子的烃基; R2表示二价有机基团 含有选自氢,氧和氮作为其构成原子或原子的至少一种原子的1至20个碳原子)与(b)反应性硅基团 (c)在VIII族过渡金属催化剂的存在下,将反应性硅基引入所述低聚物(a)中。
    • 3. 发明授权
    • Method of producing reactive silicon group-containing polyether oligomers
    • 制备含反应性基团的聚醚低聚物的方法
    • US06248915B1
    • 2001-06-19
    • US09472962
    • 1999-12-28
    • Hiroshi ItoHidetoshi OdakaHideharu JyonoHiroshi IwakiriFumio Kawakubo
    • Hiroshi ItoHidetoshi OdakaHideharu JyonoHiroshi IwakiriFumio Kawakubo
    • C07F708
    • C08G65/336
    • The invention provides a method of producing a reactive silicon group-containing polyether oligomer which comprises reacting (a) a polyether oligomer having main chain of a polyether and, in each molecule, at least one unsaturated group represented by the general formula (1): H2C═C(R1)—R2—O—  (1) (in the formula, R1 is a hydrocarbon group containing not more than 10 carbon atoms and R2 is a divalent organic group containing 1 to 20 carbon atoms and one or more species selected from the group consisting of hydrogen, oxygen and nitrogen atoms as a constituent atom) or the general formula (2): HC(R1)═CH—R2—O—  (2) on a side chain or at a terminus with (b) a reactive silicon group-containing compound in the presence of (c) a group VIII transition metal catalyst to introduce the reactive silicon group into said polyether oligomer (a), wherein the reaction is carried out in the presence of (d) a sulfur compound.
    • 本发明提供一种制备含反应性含硅基团的聚醚低聚物的方法,该方法包括使(a)具有聚醚主链的聚醚低聚物和每个分子中至少一个由通式(1)表示的不饱和基团: (式中,R 1为含有10个以下碳原子的烃基,R 2为含有1〜20个碳原子的二价有机基团和选自氢,氧和氮原子作为成分的一种以上的物质 原子)或通式(2):在侧链或末端具有(b)含有反应性硅基团的化合物,在(c)第Ⅷ族过渡金属催化剂的存在下将反应性硅基团引入所述 聚醚低聚物(a),其中反应在(d)硫化合物的存在下进行。
    • 5. 发明授权
    • Description curable composition
    • 可固化组合物
    • US06437072B1
    • 2002-08-20
    • US09537802
    • 2000-03-29
    • Hideharu JyonoHidetoshi OdakaHiroshi ItoHiroshi Iwakiri
    • Hideharu JyonoHidetoshi OdakaHiroshi ItoHiroshi Iwakiri
    • C08G7760
    • C08L71/02C08G65/336
    • The present invention has its object to provide a curable composition having good storage stability even when it contains a hydrolyzable silicon compound and/or an amino group-containing alkoxysilane or amino-substituted alkoxysilane derivative compound. This invention provides a curable composition which comprises (A) a reactive silicon group-containing polyether oligomer and at least one species selected from the following (B) and (C): (B) a hydrolyzable silicon compound having a hydrolyzable group bound to a silicon atom, said hydrolyzable group being more reactive with H2O than the silicon group in the above reactive silicon group-containing polyether oligomer and (C) an amino group-containing alkoxysilane or amino-substituted alkoxysilane derivative compound,
    • 本发明的目的是提供即使含有可水解的硅化合物和/或含氨基的烷氧基硅烷或氨基取代的烷氧基硅烷衍生物化合物也具有良好的储存稳定性的固化性组合物。 本发明提供一种可固化组合物,其包含(A)含反应性硅基的聚醚低聚物和选自以下(B)和(C)中的至少一种:(B)具有可结合水解性基团的可水解硅化合物 硅原子,所述可水解基团与上述含有反应性硅基的聚醚低聚物中的硅基相比,与H 2 O更具反应性,(C)含氨基的烷氧基硅烷或氨基取代的烷氧基硅烷衍生物化合物,
    • 6. 发明授权
    • Curable composition
    • 可固化组合物
    • US06444775B1
    • 2002-09-03
    • US09534990
    • 2000-03-27
    • Hideharu JyonoHidetoshi OdakaHiroshi ItoHiroshi Iwakiri
    • Hideharu JyonoHidetoshi OdakaHiroshi ItoHiroshi Iwakiri
    • C08G7700
    • C08G65/336C08L71/02Y10S528/901
    • The present invention has its object to provide a curable composition showing a controlled initial curing rate and, hence, offering good workability by introducing a methyl group into the neighborhood of the reactive silicon group within an oligomer to indirectly lower the reactivity of the reactive silicon group within the oligomer. The present invention is concerned with a curable composition comprising (A) a reactive silicon group-containing polyether oligomer and (B) a silanol condensation catalyst, said (A) reactive silicon group-containing polyether oligomer having a partial structure of the following general formula (1) per molecule: —O—R1—CH(CH3)—CH2—(Si(R22−b)(Xb)O)mSi(R33−a)Xa  (1)
    • 本发明的目的是提供一种可控制的初始固化速率的固化组合物,从而通过在低聚物内部将反应性硅基团附近引入甲基以间接降低反应性硅基团的反应性而提供良好的加工性 在低聚物内。 本发明涉及含有(A)含有反应性硅基团的聚醚低聚物和(B)硅烷醇缩合催化剂的可固化组合物,所述(A)含有反应性含硅基团的聚醚低聚物具有以下通式 (1)每分子:
    • 8. 发明授权
    • Image display method and liquid crystal display device employing same
    • 图像显示方法和采用该方法的液晶显示装置
    • US09330613B2
    • 2016-05-03
    • US13885109
    • 2011-06-13
    • Hiroshi Ito
    • Hiroshi Ito
    • G09G5/10G09G3/36H04N13/00H04N13/04G09G3/00
    • G09G3/3607G09G3/003G09G3/3648G09G2310/0224G09G2310/061H04N13/144H04N13/315H04N13/341
    • Uniformize afterimages caused by black insertion to each image when two types of images are alternately displayed. There are provided a left and right image alternate output unit, a mask pattern storage unit, a mask pattern selection counter, and a mask synthesizing unit. The left and right image alternate output unit alternately outputs two types of video frames. The mask pattern storage unit stores m mask patterns, wherein basic regions are defined in a pixel region of a liquid crystal panel, the pixel region has m pixels arrayed in a matrix, m is an even number equal to or greater than 4, the in mask patterns have different arrangements of mask pixels in the basic region, and the number of the mask pixels is an even number smaller than m and equal to or greater than 2.
    • 当交替显示两种类型的图像时,均匀化由黑色插入引起的每个图像所造成的余像。 提供了左右图像交替输出单元,掩模图案存储单元,掩模图案选择计数器和掩码合成单元。 左右图像交替输出单元交替输出两种类型的视频帧。 掩模图案存储单元存储m个掩模图案,其中基本区域被限定在液晶面板的像素区域中,像素区域具有以矩阵排列的m个像素,m为等于或大于4的偶数, 掩模图案在基本区域中具有不同的掩模像素布置,并且掩模像素的数量是小于m且等于或大于2的偶数。
    • 9. 发明授权
    • Manufacturing method of a piezoelectric element and a liquid ejecting head
    • 压电元件和液体喷射头的制造方法
    • US08819903B2
    • 2014-09-02
    • US13197464
    • 2011-08-03
    • Toshihiro ShimizuJiro KatoEiju HiraiHiroshi Ito
    • Toshihiro ShimizuJiro KatoEiju HiraiHiroshi Ito
    • H04R17/00H01L41/29B41J2/16H01L41/314B41J2/14
    • H01L41/29B41J2/161B41J2/1628B41J2/1631B41J2002/14491H01L41/314Y10T29/42Y10T29/49002Y10T29/49401
    • A manufacturing method of a piezoelectric element includes: forming a first conductive layer upon a substrate; forming a piezoelectric layer upon the first conductive layer; forming a second conductive layer upon the piezoelectric layer; forming a third conductive layer upon the second conductive layer; forming a first portion, a second portion, and an opening portion provided between the first portion and the second portion by patterning the third conductive layer; forming a resist layer that covers the opening portion and covers the edges of the first portion and the second portion that face the opening portion side; and forming a first conductive portion and a second conductive portion configured from the first portion and the second portion, and forming a third conductive portion configured from the second conductive layer, by dry-etching the second conductive layer using the first portion, the second portion, and the resist layer as a mask.
    • 压电元件的制造方法包括:在基板上形成第一导电层; 在所述第一导电层上形成压电层; 在所述压电层上形成第二导电层; 在所述第二导电层上形成第三导电层; 通过对第三导电层进行构图而形成第一部分,第二部分和设置在第一部分和第二部分之间的开口部分; 形成覆盖所述开口部并且覆盖所述第一部分和面向所述开口部侧的所述第二部分的边缘的抗蚀剂层; 以及形成由所述第一部分和所述第二部分构成的第一导电部分和第二导电部分,以及通过使用所述第一部分干蚀刻所述第二导电层,形成由所述第二导电层构成的第三导电部分,所述第二部分 ,抗蚀剂层作为掩模。
    • 10. 发明授权
    • Method for using a topcoat composition
    • 使用面漆组合物的方法
    • US08802357B2
    • 2014-08-12
    • US13326404
    • 2011-12-15
    • Hiroshi ItoLinda Karin Sundberg
    • Hiroshi ItoLinda Karin Sundberg
    • G03F7/095
    • G03F7/2041G03F7/0046G03F7/11
    • A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
    • 在光致抗蚀剂上形成图像的方法。 该方法包括:在衬底上形成光致抗蚀剂; 将面漆组合物,包含至少一种含氟聚合物和浇铸溶剂的面漆组合物涂覆到光致抗蚀剂上; 除去顶涂层组合物的浇铸溶剂,导致在光致抗蚀剂上形成顶涂层材料; 将光致抗蚀剂暴露于辐射,辐射改变暴露于辐射的光刻胶的区域的化学组成,在光致抗蚀剂中形成暴露和未曝光的区域; 并去除i)面漆材料和ii)光致抗蚀剂的曝光区域或光致抗蚀剂的未曝光区域。