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1. 发明授权

US09429541B2 Gas sensor element, gas sensor and control system of gas sensor 有权
标题翻译：气体传感器元件，气体传感器和气体传感器控制系统
公开(公告)号：US09429541B2
公开(公告)日：2016-08-30
申请号：US13037982
申请日：2011-03-01
申请人： Shin Yoshida , Shigeki Mori , Takeshi Kawai , Hiroshi Inagaki , Seiji Oya , Kentaro Mori
发明人： Shin Yoshida , Shigeki Mori , Takeshi Kawai , Hiroshi Inagaki , Seiji Oya , Kentaro Mori
IPC分类号： G01N27/417
CPC分类号： G01N27/417 , G01N27/4175
摘要： In order to compensate for variation in output of sensor elements 10, there is provided a compensating resistor 220 that has a resistance value reflected by correction information. The resistor 220 is connected in parallel with a VS cell 245 through paired electrode leads 236 and 237 and paired electrode pads 232 and 233. The paired electrode leads 236 and 237 are placed at a position electrically isolated from solid electrolyte substrates 120 and 140.
摘要翻译：为了补偿传感器元件10的输出变化，提供了具有由校正信息反映的电阻值的补偿电阻器220。电阻器220通过成对的电极引线236和237以及成对的电极焊盘232和233与VS电池245并联连接。成对的电极引线236和237被放置在与固体电解质基底120和140电隔离的位置。

2. 发明授权

US08959988B2 Oxygen sensor control apparatus 有权
标题翻译：氧传感器控制装置
公开(公告)号：US08959988B2
公开(公告)日：2015-02-24
申请号：US13531203
申请日：2012-06-22
申请人： Hiroshi Inagaki , Kentaro Mori
发明人： Hiroshi Inagaki , Kentaro Mori
IPC分类号： G01N27/419 , G01N27/409
CPC分类号： G01N27/409 , F01N2560/025
摘要： In an oxygen sensor control apparatus, a CPU obtains a correction coefficient for calibrating the relation between output value of an oxygen sensor and oxygen concentration when a fuel cut operation is performed. When the amount of scavenging air (total supply amount of air) becomes equal to or greater than a predetermined amount in each fuel cut period, the CPU calculates an average output value Ipav from a plurality of output values (concentration corresponding values) Ipr of the oxygen sensor, from which values deviating from a predetermined range R1 have been removed. Subsequently, the CPU averages the values obtained in a plurality of fuel cut periods to thereby obtain a plural-time average output value Ipavf. The CPU obtains a correction coefficient for correcting the actual output value Ip of the oxygen sensor 20 on the basis of the Ipavf value and a previously set reference output value.
摘要翻译：在氧传感器控制装置中，CPU执行校正氧传感器的输出值与进行燃料切断动作时的氧浓度之间的关系的校正系数。当每个燃料切断期间的清扫空气量（总空气供给量）变为规定量以上时，CPU从多个输出值（浓度对应值）Ipr计算平均输出值Ipav 氧传感器，从其偏离预定范围R1的值已被去除。随后，CPU对在多个燃料切断时段中获得的值进行平均，从而获得多次平均输出值Ipavf。 CPU根据Ipavf值和预先设定的基准输出值，求出校正氧传感器20的实际输出值Ip的校正系数。

3. 发明授权

US08975150B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08975150B2
公开(公告)日：2015-03-10
申请号：US13190052
申请日：2011-07-25
申请人： Kentaro Mori , Shintaro Yamamichi , Hideya Murai , Takuo Funaya , Masaya Kawano , Takehiko Maeda , Kouji Soejima
发明人： Kentaro Mori , Shintaro Yamamichi , Hideya Murai , Takuo Funaya , Masaya Kawano , Takehiko Maeda , Kouji Soejima
IPC分类号： H01L21/76 , H01L21/683 , H01L23/538 , H01L23/544 , H01L23/00
CPC分类号： H01L21/6835 , H01L23/5389 , H01L23/544 , H01L24/19 , H01L24/24 , H01L2221/68345 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/04105 , H01L2224/24226 , H01L2224/32225 , H01L2224/73267 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12044 , H01L2924/15174 , H01L2924/15788 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/3011 , Y10S438/977 , H01L2924/00
摘要： A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost.
摘要翻译：透明板位于设置有定位标记的支撑板上，并且设置有释放材料。然后将半导体元件定位成使得电极元件面向上，然后移除支撑板。然后在剥离材料上形成绝缘树脂以覆盖半导体元件; 然后形成通孔，布线层，绝缘层，外部端子和阻焊剂。然后透明板通过使用释放材料从半导体器件剥离。因此，可以高精度地安装芯片，在制造过程中不需要在将芯片安装在基板上时提供定位标记，并且可以容易地去除基板。结果，可以以低成本制造具有高密度和薄型的半导体器件。

4. 发明授权

US08827435B2 Conductor pattern printing ink 有权
标题翻译：导体图案印刷油墨
公开(公告)号：US08827435B2
公开(公告)日：2014-09-09
申请号：US13325658
申请日：2011-12-14
申请人： Daisuke Uematsu , Kentaro Mori , Nobuhiro Hayakawa
发明人： Daisuke Uematsu , Kentaro Mori , Nobuhiro Hayakawa
IPC分类号： C09D11/00 , C09D7/12
CPC分类号： C09D11/322 , C09D7/67 , C09D7/68 , C09D11/52
摘要： There is provided an ink for printing a conductor pattern on a substrate, including platinum particles, wherein 70% or more of the platinum particles have a particle size of 0.05 to 0.5 μm. Even when the viscosity of the printing ink is controlled to a relatively low level for use in ink-jet printing process, it is possible by such particle size distribution control to prevent sedimentation of the platinum particles and excessive shrinkage of the conductor pattern due to sintering of the platinum particles during firing so that the conductor pattern can attain improved conduction characteristics.
摘要翻译：提供了一种用于在包括铂颗粒的基板上印刷导体图案的油墨，其中70％或更多的铂颗粒具有0.05至0.5μm的粒径。即使将印刷油墨的粘度控制在用于喷墨印刷工艺的较低水平，也可以通过这种粒度分布控制来防止铂颗粒的沉淀和由于烧结导致的导体图案的过度收缩的铂粒子，使得导体图案可以获得改善的导电特性。

5. 发明授权

US08766440B2 Wiring board with built-in semiconductor element 失效
标题翻译：配有内置半导体元件的接线板
公开(公告)号：US08766440B2
公开(公告)日：2014-07-01
申请号：US13582128
申请日：2011-01-25
申请人： Katsumi Kikuchi , Shintaro Yamamichi , Hideya Murai , Kentaro Mori , Yoshiki Nakashima , Daisuke Ohshima
发明人： Katsumi Kikuchi , Shintaro Yamamichi , Hideya Murai , Kentaro Mori , Yoshiki Nakashima , Daisuke Ohshima
IPC分类号： H01L23/52
CPC分类号： H05K1/186 , H01L21/568 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/23 , H01L24/82 , H01L2224/04105 , H01L2224/06181 , H01L2224/2101 , H01L2224/221 , H01L2224/24105 , H01L2224/24226 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/1461 , H05K3/4644 , H01L2924/00
摘要： A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer.
摘要翻译：包括内置半导体元件的布线板包括半导体元件，覆盖半导体元件的外周侧表面的外围绝缘层，设置在布线基板的上表面侧的上表面侧布线，以及下部设置在布线基板的下表面侧的表面侧配线。半导体元件包括：第一布线结构层，包括交替设置在半导体基板上的第一布线和第一绝缘层;以及第二布线结构层，包括交替设置在第一布线结构层上的第二布线和第二绝缘层。上表面侧布线包括经由第二布线电连接到第一布线的布线。第二布线比第一布线厚，比上表面布线薄。第二绝缘层由树脂材料形成，并且比第一绝缘层厚。

6. 发明授权

US08710669B2 Semiconductor device manufacture in which minimum wiring pitch of connecting portion wiring layer is less than minimum wiring pitch of any other wiring layer 有权
标题翻译：连接部分布线层的最小布线间距小于任何其它布线层的最小布线间距的半导体器件制造
公开(公告)号：US08710669B2
公开(公告)日：2014-04-29
申请号：US13320798
申请日：2010-05-18
申请人： Kentaro Mori , Yoshiki Nakashima , Daisuke Ohshima , Katsumi Kikuchi , Shintaro Yamamichi
发明人： Kentaro Mori , Yoshiki Nakashima , Daisuke Ohshima , Katsumi Kikuchi , Shintaro Yamamichi
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L23/5389 , H01L23/49827 , H01L24/24 , H01L24/82 , H01L2224/0401 , H01L2224/04105 , H01L2224/16225 , H01L2224/24051 , H01L2224/24226 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01005 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/3511 , H05K1/185 , H05K3/4602 , H05K3/4644 , H05K2201/10674 , H01L2924/00
摘要： A semiconductor device includes a core substrate, and at least one insulating layer and at least one wiring layer that are disposed on a first surface and a second, opposite surface of the substrate. The semiconductor device includes a via disposed in the insulating layer and in the core substrate, and which connects the wiring layers to one another. The semiconductor device includes a semiconductor element mounted on the first surface, forming an electrode terminal that faces up. The semiconductor device includes a connecting portion that penetrates the insulating layer and directly connects the electrode terminal of the semiconductor element and the wiring layer on the first surface. A minimum wiring pitch of this wiring that of any wiring layer on the second surface.
摘要翻译：半导体器件包括芯基板，以及设置在基板的第一表面和第二相对表面上的至少一个绝缘层和至少一个布线层。半导体器件包括布置在绝缘层和芯基板中并且将布线层彼此连接的通孔。半导体器件包括安装在第一表面上的半导体元件，形成面向上的电极端子。半导体器件包括穿透绝缘层并直接连接半导体元件的电极端子和第一表面上的布线层的连接部分。该布线的最小布线间距为第二面上任何布线层的布线间距。

7. 发明申请

US20130272485A1 NUCLEAR REACTOR VESSEL SUPPORT STRUCTURE AND CONSTRUCTION METHOD OF NUCLEAR REACTOR VESSEL SUPPORT STRUCTURE 有权
标题翻译：核反应堆船舶支持结构和核反应堆船舶支持结构的构造方法
公开(公告)号：US20130272485A1
公开(公告)日：2013-10-17
申请号：US13992999
申请日：2011-12-06
申请人： Hiroshi Shimizu , Ryo Fujimoto , Kentaro Mori , Hiromu Okamoto , Hisashi Sekimoto , Hiroyuki Iseki
发明人： Hiroshi Shimizu , Ryo Fujimoto , Kentaro Mori , Hiromu Okamoto , Hisashi Sekimoto , Hiroyuki Iseki
IPC分类号： G21C13/024 , E04B1/16
CPC分类号： G21C13/024 , E04B1/16 , F22B37/248 , Y02E30/40
摘要： A nuclear reactor vessel structure includes an inner peripheral tube-shaped steel plate, an outer peripheral tube-shaped steel plate, and an intermediate tube-shaped steel plate disposed between the inner and outer peripheral tube-shaped steel plates, and is configured to support a nuclear reactor vessel on the inner peripheral side of a tube-shaped structure with concrete placed between the steel plates. The nuclear reactor vessel structure includes a support having a tube-shaped plate disposed on the inner peripheral side of the intermediate tube-shaped steel plate, and an annular plate which protrudes to the inner peripheral side of the tube-shaped plate and to which a connection section is affixed. The support is affixed to the concrete, which is placed between the inner peripheral and the intermediate tube-shaped steel plates, by first bar members, and the support is also affixed to the inner peripheral tube-shaped steel plate by second bar members.
摘要翻译：核反应堆容器结构包括内周管状钢板，外周管状钢板和设置在内外管状钢板之间的中间管状钢板，构成为支承在管状结构的内周侧具有放置在钢板之间的混凝土的核反应堆容器。核反应堆容器结构包括具有设置在中间管状钢板的内周侧的管状板的支撑体和向管状板的内周侧突出的环状板，连接部分被贴上。支撑体通过第一杆构件固定在内周和中间管状钢板之间的混凝土上，并且支撑体也通过第二杆构件固定到内周管状钢板。

8. 发明申请

US20130127037A1 SEMICONDUCTOR DEVICE BUILT-IN SUBSTRATE 审中-公开
标题翻译：半导体器件内置衬底
公开(公告)号：US20130127037A1
公开(公告)日：2013-05-23
申请号：US13638421
申请日：2011-03-03
申请人： Kentaro Mori , Shintaro Yamamichi , Katsumi Kikuchi , Daisuke Ohshima , Yoshiki Nakashima , Hideya Murai
发明人： Kentaro Mori , Shintaro Yamamichi , Katsumi Kikuchi , Daisuke Ohshima , Yoshiki Nakashima , Hideya Murai
IPC分类号： H01L23/34
CPC分类号： H01L23/34 , H01L23/3114 , H01L23/367 , H01L23/3677 , H01L23/5389 , H01L24/04 , H01L24/12 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/32 , H01L24/73 , H01L24/82 , H01L25/0657 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/24146 , H01L2224/32145 , H01L2224/73267 , H01L2225/06589 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10342 , H01L2924/12042 , H01L2924/1431 , H01L2924/1432 , H01L2924/1435 , H01L2924/145 , H05K1/0203 , H05K1/185 , H05K2201/10515 , H01L2924/3512 , H01L2924/00
摘要： An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device.
摘要翻译：本发明的一个目的是提供一种内置半导体器件的基板，它可以制成薄而可以抑制翘曲的发生。本发明提供一种半导体衬底，其特征在于包括：第一半导体器件，用作衬底;第二半导体器件，其位于第一半导体器件的电路表面侧，处于第一和第二半导体器件的电路表面的状态被放置成面向相同的方向，并且其中包含第二半导体器件的绝缘层，其特征在于至少在第一半导体器件和第二半导体器件之间形成散热层，并且其中的热量散热层形成在第一半导体器件上，以便延伸到第二半导体器件的外部。

9. 发明申请

US20130026653A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130026653A1
公开(公告)日：2013-01-31
申请号：US13636324
申请日：2011-03-22
申请人： Shintaro Yamamichi , Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori
发明人： Shintaro Yamamichi , Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori
IPC分类号： H01L21/56 , H01L23/48
CPC分类号： H05K1/185 , H01L23/49816 , H01L23/5384 , H01L23/5389 , H01L23/66 , H01L24/18 , H01L24/19 , H01L2224/04105 , H01L2224/16225 , H01L2224/16227 , H01L2224/18 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1461 , H01L2924/15311 , H01L2924/3511 , H05K3/4605 , H05K2201/09581 , H05K2201/10674 , H05K2203/1469 , H01L2924/00
摘要： In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.
摘要翻译：在包含多个布线层和绝缘层的多层布线结构中包含半导体元件的半导体器件的制造方法中，将半导体元件安装在硅支撑体上，该硅支撑体的厚度减小到期望的厚度并且配备有多个穿过厚度方向的通孔; 形成绝缘层以嵌入半导体元件; 那么在与硅半导体元件相连的硅支撑体的相对表面上形成多个布线层。因此，可以减少在制造中在半导体元件附近发生的翘曲，从而改善整个半导体器件的翘曲轮廓。此外，可以防止半导体元件变得无用，提高成品率，并且可以生产具有高密度封装性能的薄型半导体器件。

10. 发明授权

US08344498B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08344498B2
公开(公告)日：2013-01-01
申请号：US12739302
申请日：2008-10-22
申请人： Shintaro Yamamichi , Kentaro Mori , Hideya Murai
发明人： Shintaro Yamamichi , Kentaro Mori , Hideya Murai
IPC分类号： H01L23/02
CPC分类号： H01L23/528 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/5226 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L2224/04105 , H01L2224/20 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1461 , H01L2924/15311 , H01L2924/19041 , H01L2924/3511 , H01L2924/00
摘要： A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection.
摘要翻译：半导体器件包括：半导体元件; 支撑基板，布置在所述半导体元件的与其表面相对的表面上，所述支撑基板设置有焊盘，所述支撑基板的面积比所述半导体元件宽; 在所述支撑基板上的掩埋绝缘层，用于将所述半导体元件埋入其中; 一个扇形互连从焊盘引出到掩埋绝缘层上的比半导体元件更外周的区域; 以及加强部，布置在半导体元件的外周的顶部的预设区域中，用于增加掩埋绝缘层的机械强度和扇出互连。

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