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    • 3. 发明申请
    • SUBSTRATE AND SEMICONDUCTOR DEVICE
    • 基板和半导体器件
    • US20100258938A1
    • 2010-10-14
    • US12742926
    • 2007-12-05
    • Teppei ItoHitoshi KawaguchiHiroyuki Tanaka
    • Teppei ItoHitoshi KawaguchiHiroyuki Tanaka
    • H01L23/498H05K1/03
    • H05K1/0271H01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00011H01L2924/00014H01L2924/15311H05K1/0224H05K3/4602H05K3/4682H05K2201/068H05K2201/09136H05K2201/09236H05K2201/09681H05K2201/09709H01L2924/00H01L2224/0401
    • A substrate (3) has a build-up layer in which insulating layers containing a resin and conductor interconnect layers (312) are alternately laminated and the conductor interconnect layers (312) are mutually connected through the conductor layer formed in a via-hole of the insulating layer. A conductor interconnect layer (312D) arranged on the outermost surface side of a substrate among the conductor interconnect layers (312) has a plurality of signal lines (312D1) formed in a signal line arrangement area (A) and extended in a predetermined direction. When αsig-x represents a coefficient of thermal expansion in a direction substantially parallel to the signal lines (312D1) in the signal line arrangement area (A) having the signal lines (312D1) as determined by a laser speckle method and αsig-y represents a coefficient of thermal expansion in a direction substantially orthogonal to the signal lines as determined by a laser speckle method, a dependence rate in the signal line direction of a coefficient of thermal expansion represented by the following equation is 25 or less. Dependence rate in the signal line direction of the coefficient of thermal expansion=(|αsig-y−αsig-x|/αsig-x)×100.
    • 基板(3)具有积层层,其中包含树脂和导体互连层(312)的绝缘层交替层叠,并且导体互连层(312)通过形成在通孔中的导体层相互连接 绝缘层。 布置在导体互连层(312)中的基板的最外表面侧的导体互连层(312D)具有形成在信号线布置区域(A)中并沿预定方向延伸的多条信号线(312D1)。 当αsig-x表示与通过激光散斑法确定的具有信号线(312D1)的信号线配置区域(A)中的信号线(312D1)基本平行的方向的热膨胀系数,αsig-y表示 通过激光散斑法确定的与信号线基本正交的方向的热膨胀系数,由下式表示的热膨胀系数的信号线方向的相关率为25以下。 热膨胀系数的信号线方向的依赖率=(|αsig-y-αsig-x | /αsig-x)×100。