会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Semiconductor light emitting apparatus and optical print head
    • 半导体发光装置和光学打印头
    • US08304792B2
    • 2012-11-06
    • US12347144
    • 2008-12-31
    • Yusuke NakaiHironori FurutaMitsuhiko OgiharaHiroyuki Fujiwara
    • Yusuke NakaiHironori FurutaMitsuhiko OgiharaHiroyuki Fujiwara
    • H01L33/02
    • H01L33/0041H01L33/38H01S5/06203
    • A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer.
    • 提供能够提供同时优化电特性和发光特性的高性能的半导体发光装置。 半导体装置包括阳极层; 阴极层,其具有与阳极层不同的导电类型; 栅极层,其控制所述阳极层和所述阴极层之间的导电; 设置在阳极层和阴极层之间并通过电子和空穴的复合发光的有源层; 第一包层,其设置在所述有源层的一个表面上,并且具有比所述有源层的能带隙大的能带隙; 以及设置在有源层的其他表面上的第二包层具有比有源层的能带隙大的能带隙,并且具有与第一包层不同的导电类型,其中栅极层的厚度为 或低于植入栅极层的载流子的平均自由程。