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    • 4. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US07622736B2
    • 2009-11-24
    • US11579145
    • 2005-12-01
    • Yoshitaka MoriyaHiroko AbeMikio YukawaRyoji Nomura
    • Yoshitaka MoriyaHiroko AbeMikio YukawaRyoji Nomura
    • H01L23/58
    • G11C13/0014B82Y10/00G11C11/22
    • It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
    • 本发明的目的是提供一种易于制造数据的易失性半导体器件及其制造方法。 本发明的特征在于,半导体器件包括:元件形成层,其包括设置在基板上的第一晶体管和第二晶体管; 设置在所述元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分,其中所述存储元件具有包括第一导电层和有机化合物层的层状结构以及第二导电层,所述第一导电层与所述第一晶体管电连接, 传感器部分电连接到第二晶体管。
    • 5. 发明申请
    • Semiconductor Device and Method for Manufacturing the Same
    • 半导体装置及其制造方法
    • US20070215869A1
    • 2007-09-20
    • US11579145
    • 2005-12-01
    • Yoshitaka MoriyaHiroko AbeMikio YukawaRyoji Nomura
    • Yoshitaka MoriyaHiroko AbeMikio YukawaRyoji Nomura
    • H01L29/08
    • G11C13/0014B82Y10/00G11C11/22
    • It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
    • 本发明的目的是提供一种易于制造数据的易失性半导体器件及其制造方法。 本发明的特征在于,半导体器件包括:元件形成层,其包括设置在基板上的第一晶体管和第二晶体管; 设置在所述元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分,其中所述存储元件具有包括第一导电层和有机化合物层的层状结构以及第二导电层,所述第一导电层与所述第一晶体管电连接, 传感器部分电连接到第二晶体管。
    • 10. 发明授权
    • Full color display based on organic light-emitting device
    • 基于有机发光装置的全彩显示
    • US07812520B2
    • 2010-10-12
    • US12213135
    • 2008-06-16
    • Ryoji NomuraHiroko AbeMikio YukawaShunpei Yamazaki
    • Ryoji NomuraHiroko AbeMikio YukawaShunpei Yamazaki
    • H01J63/04H01S5/00
    • H01L27/322H01L27/3244H01L51/5265H01L2251/5315H01L2251/533H01L2251/558
    • The conventional light-emitting element formed by an electroluminescent material has a problem due to poor color purity of light emission. Accordingly, it is an object of the present invention to provide a high luminance and high efficiency light-emitting device formed by an organic compound material. The invention provides a light-emitting device in which an organic compound layer that emits light having an emission peak with a half-band width of at most 10 nm upon applying current is interposed between a pair of electrodes is provided. The variation of emission peak intensity depending on a current density can be sorted by two linear regions with different gradients. A region of a sharp gradient is at a higher current density side compared to a region of a slow gradient. TFTs are provided to each pixel in order to perform active matrix driving.
    • 由电致发光材料形成的常规发光元件由于发光的颜色纯度差而具有问题。 因此,本发明的目的是提供一种由有机化合物材料形成的高亮度和高效率的发光装置。 本发明提供了一种发光装置,其中,在一对电极之间插入有发光的有机化合物层,该有机化合物层在施加电流时具有半波带宽度至多为10nm的发光峰。 根据电流密度的发射峰强度的变化可以通过具有不同梯度的两个线性区域进行分类。 与缓慢梯度的区域相比,锐度梯度的区域处于较高的电流密度侧。 为了进行有源矩阵驱动,向每个像素提供TFT。