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1. 发明授权

US07939830B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07939830B2
公开(公告)日：2011-05-10
申请号：US12477981
申请日：2009-06-04
申请人： Hiroki Takahashi , Shigeru Ohno , Kunihiko Watanabe , Junichi Uehara , Tsuyoshi Uchida , Yasuko Gotoh
发明人： Hiroki Takahashi , Shigeru Ohno , Kunihiko Watanabe , Junichi Uehara , Tsuyoshi Uchida , Yasuko Gotoh
IPC分类号： H01L23/52 , H01L23/535
CPC分类号： H01L27/124 , H01L27/1288
摘要： An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.
摘要翻译：本发明的目的是提供一种显示装置，其中形成在一对电极之间的半导体层图案可以形成为预定尺寸，即使在半导体层图案顶部的电极之间的距离相对较小的情况下大量的元件根据光致抗蚀剂回流技术形成。本发明提供了一种在绝缘基板上形成元件的显示装置，其特征在于，上述元件包括：形成在上述绝缘基板的主表面上的半导体层图案或形成在主表面上的绝缘膜层 ; 以及在上述半导体层图案上彼此平行设置的多个电极，上述数量的电极是位于第一电极和第二电极之间的第一电极，第二电极和虚设电极，将上述数量的电极图案化，从而形成突起，其中上述电极在至少一个相对侧的至少一个端侧对齐。

2. 发明申请

US20090302320A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20090302320A1
公开(公告)日：2009-12-10
申请号：US12477981
申请日：2009-06-04
申请人： Hiroki TAKAHASHI , Shigeru Ohno , Kunihiko Watanabe , Junichi Uehara , Tsuyoshi Uchida , Yasuko Gotoh
发明人： Hiroki TAKAHASHI , Shigeru Ohno , Kunihiko Watanabe , Junichi Uehara , Tsuyoshi Uchida , Yasuko Gotoh
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1288
摘要： An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.
摘要翻译：本发明的目的是提供一种显示装置，其中形成在一对电极之间的半导体层图案可以形成为预定尺寸，即使在半导体层图案顶部的电极之间的距离相对较小的情况下大量的元件根据光致抗蚀剂回流技术形成。本发明提供了一种在绝缘基板上形成元件的显示装置，其特征在于，上述元件包括：形成在上述绝缘基板的主表面上的半导体层图案或形成在主表面上的绝缘膜层 ; 以及在上述半导体层图案上彼此平行设置的多个电极，上述数量的电极是位于第一电极和第二电极之间的第一电极，第二电极和虚设电极，将上述数量的电极图案化，从而形成突起，其中上述电极在至少一个相对侧的至少一个端侧对齐。

3. 发明申请

US20100327287A1 Display Device And Manufacturing Method Of The Same 有权
标题翻译：显示器件及其制造方法
公开(公告)号：US20100327287A1
公开(公告)日：2010-12-30
申请号：US12881560
申请日：2010-09-14
申请人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
发明人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
IPC分类号： H01L33/08
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/1288
摘要： A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.
摘要翻译：显示装置包括在基板上由栅极信号线，绝缘膜，半导体层和导体层形成的顺序层叠体。导电层形成漏极电极和薄膜晶体管的源电极，其间设置有半导体层的沟道区域，漏极和源极之一形成为具有开口端的大致U形端部侧和另一端侧的连接部分，使得一个电极围绕另一个电极的远端部分，如在平面图中所示，并且突出部分形成在与另一个电极相对的连接部分的一侧上。

4. 发明申请

US20080210941A1 Dispaly device 有权
标题翻译：显示设备
公开(公告)号：US20080210941A1
公开(公告)日：2008-09-04
申请号：US12000854
申请日：2007-12-18
申请人： Kunihiko Watanabe , Junichi Uehara , Miyo Ishii
发明人： Kunihiko Watanabe , Junichi Uehara , Miyo Ishii
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L29/41733 , H01L29/78609 , H01L29/78669 , H01L29/78696
摘要： The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.
摘要翻译：本发明提供一种能够避免在薄膜晶体管中产生漏电流的显示装置。在包括基板和栅极信号线的显示装置中，依次层叠在基板上的绝缘膜，半导体层和导体层，导体层至少形成连接到漏极信号线和源极的漏电极电极，其连接到像素电极，并且半导体层形成为其中半导体层具有突出部分的图案，其中，除了漏电极的远端之外，半导体层具有从导体层向外突出的部分，一个平面图。

5. 发明申请

US20080173873A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：US20080173873A1
公开(公告)日：2008-07-24
申请号：US12017384
申请日：2008-01-22
申请人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
发明人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/1288
摘要： The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
摘要翻译：本发明提供一种制造能够可靠地在薄膜晶体管中形成电极的显示装置的方法。一种制造显示装置的方法包括以下步骤：制备具有由栅极信号线，绝缘膜，半导体层和导体层形成的顺序层叠体的基板; 至少在形成有薄膜晶体管的区域中形成薄膜晶体管的漏电极和源电极，其中漏极电极和源极电极中的一个形成为具有开路的大致U形的图案，在另一端侧端部一端侧和连接部分，使得一个电极围绕另一电极的远端部分，如在平面图中所示，并且突出部分形成在与另一电极相对的连接部分的一侧，其中，通过使用光致抗蚀剂膜作为掩模选择性地蚀刻导体层来形成各个电极; 并使用通过直接回流光致抗蚀剂膜作为掩模形成的变形的光致抗蚀剂膜来蚀刻半导体层。

6. 发明授权

US08089575B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US08089575B2
公开(公告)日：2012-01-03
申请号：US12881560
申请日：2010-09-14
申请人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
发明人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
IPC分类号： H01L27/14
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/1288
摘要： A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.
摘要翻译：显示装置包括在基板上由栅极信号线，绝缘膜，半导体层和导体层形成的顺序层叠体。导电层形成漏极电极和薄膜晶体管的源电极，其间设置有半导体层的沟道区域，漏极和源极之一形成为具有开口端的大致U形端部侧和另一端侧的连接部分，使得一个电极围绕另一个电极的远端部分，如在平面图中所示，并且突出部分形成在与另一个电极相对的连接部分的一侧上。

7. 发明授权

US07829395B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US07829395B2
公开(公告)日：2010-11-09
申请号：US12017384
申请日：2008-01-22
申请人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
发明人： Miyo Ishii , Junichi Uehara , Kunihiko Watanabe
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/1288
摘要： The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
摘要翻译：本发明提供一种制造能够可靠地在薄膜晶体管中形成电极的显示装置的方法。一种制造显示装置的方法包括以下步骤：制备具有由栅极信号线，绝缘膜，半导体层和导体层形成的顺序层叠体的基板; 至少在形成有薄膜晶体管的区域中形成薄膜晶体管的漏电极和源电极，其中漏极电极和源极电极中的一个形成为具有开路的大致U形的图案，在另一端侧端部一端侧和连接部分，使得一个电极围绕另一电极的远端部分，如在平面图中所示，并且突出部分形成在与另一电极相对的连接部分的一侧，其中，通过使用光致抗蚀剂膜作为掩模选择性地蚀刻导体层来形成各个电极; 并使用通过直接回流光致抗蚀剂膜作为掩模形成的变形的光致抗蚀剂膜来蚀刻半导体层。

8. 发明授权

US07825412B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07825412B2
公开(公告)日：2010-11-02
申请号：US12000854
申请日：2007-12-18
申请人： Kunihiko Watanabe , Junichi Uehara , Miyo Ishii
发明人： Kunihiko Watanabe , Junichi Uehara , Miyo Ishii
IPC分类号： H01L31/14
CPC分类号： H01L27/124 , H01L29/41733 , H01L29/78609 , H01L29/78669 , H01L29/78696
摘要： The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.
摘要翻译：本发明提供一种能够避免在薄膜晶体管中产生漏电流的显示装置。在包括基板和栅极信号线的显示装置中，依次层叠在基板上的绝缘膜，半导体层和导体层，导体层至少形成连接到漏极信号线和源极的漏电极电极，其连接到像素电极，并且半导体层形成为其中半导体层具有突出部分的图案，其中，除了漏电极的远端之外，半导体层具有从导体层向外突出的部分，一个平面图。

9. 发明授权

US08394940B2 Oxidase gene and method for producing 3-indole-pyruvic acid by utilizing the gene 有权
标题翻译：氧化酶基因及利用该基因产生3-吲哚 - 丙酮酸的方法
公开(公告)号：US08394940B2
公开(公告)日：2013-03-12
申请号：US12711719
申请日：2010-02-24
申请人： Yasuaki Takakura , Seiichi Hara , Toshiki Taba , Shunichi Suzuki , Masakazu Sugiyama , Kunihiko Watanabe , Kenzo Yokozeki
发明人： Yasuaki Takakura , Seiichi Hara , Toshiki Taba , Shunichi Suzuki , Masakazu Sugiyama , Kunihiko Watanabe , Kenzo Yokozeki
IPC分类号： C07H21/04
CPC分类号： C12P17/10 , C12N9/0022
摘要： It is an object of the present invention to provide a procedure for realizing inexpensive and simple production of 3-indole-pyruvic acid. A transformant is made using a polynucleotide having a specific nucleotide sequence encoding a protein having an oxidase activity, and oxidase is generated by culturing the transformant in a medium to accumulate the oxidase in the medium and/or the transformant. Further, tryptophan is converted into 3-indole-pyruvic acid in the presence of the transformant and/or a culture thereof to produce 3-indole-pyruvic acid.
摘要翻译：本发明的目的是提供一种实现廉价且简单的3-吲哚 - 丙酮酸生产的方法。使用具有编码具有氧化酶活性的蛋白质的特异性核苷酸序列的多核苷酸制备转化体，通过在培养基中培养转化体以在培养基和/或转化体中积累氧化酶而产生氧化酶。此外，在转化体和/或其培养物存在下，将色氨酸转化为3-吲哚 - 丙酮酸，生成3-吲哚 - 丙酮酸。

10. 发明授权

US08273556B2 Aldolase and production process of substituted α-keto acids 失效
标题翻译：醛缩酶和取代的α-酮酸的生产过程
公开(公告)号：US08273556B2
公开(公告)日：2012-09-25
申请号：US13250359
申请日：2011-09-30
申请人： Masakazu Sugiyama , Kunihiko Watanabe , Shigeru Kawahara
发明人： Masakazu Sugiyama , Kunihiko Watanabe , Shigeru Kawahara
IPC分类号： C12P7/44 , C12P7/40 , C12P7/50 , C12P17/10 , C12P7/42 , C07K14/00 , C12N9/10 , C12N9/88
CPC分类号： C12N9/88 , C12P7/42 , C12P7/50 , C12P13/04 , C12P17/10
摘要： 4-(Indol-3-ylmethyl)-4-hydroxy-2-oxoglutarate, which is useful as an intermediate in the synthesis of monatin, may be synthesized from indole pyruvic acid and pyruvic acid (and/or oxaloacetic acid) by using a novel aldolase derived from the genus Pseudomonas, Erwinia, Flavobacterium, or Xanthomonas.
摘要翻译：可用作合成莫纳甜的中间体的4-（吲哚-3-基甲基）-4-羟基-2-氧戊二酸，可以由吲哚丙酮酸和丙酮酸（和/或草酰乙酸）通过使用衍生自假单胞菌属，欧文氏菌属，黄杆菌属或黄单胞菌属的新型醛缩酶。

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