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    • 3. 发明授权
    • Lighting circuit for vehicular discharge lamp
    • 用于车辆放电灯的照明电路
    • US5151631A
    • 1992-09-29
    • US760420
    • 1991-09-16
    • Goichi OdaAtsushi TodaSoichi YagiHiroki Shibata
    • Goichi OdaAtsushi TodaSoichi YagiHiroki Shibata
    • B60Q1/04H05B41/24H05B41/282H05B41/292
    • H05B41/2923
    • A lighting circuit for a vehicular discharge lamp for lighting a discharge lamp using a DC power supply, comprises an OFF state detector, a DC input voltage detector and a power cutoff means. The OFF state detector detects an OFF status of a discharge lamp. The DC input voltage detector detects if a DC input voltage is within a predetermined range. The power cutoff means inhibits power supply to the discharge lamp when the OFF status of the discharge lamp is detected by the OFF state detector and the DC input voltage lying off the predetermined range is detected by the DC input voltage detector, and permits power supply to the discharge lamp upon reception of a signal indicating that the DC input voltage has returned within that range.
    • 一种用于使用DC电源照明放电灯的车辆放电灯的点亮电路,包括OFF状态检测器,DC输入电压检测器和电源切断装置。 OFF状态检测器检测放电灯的OFF状态。 直流输入电压检测器检测直流输入电压是否在预定范围内。 当由OFF状态检测器检测到放电灯的OFF状态并且通过DC输入电压检测器检测到处于预定范围的DC输入电压时,电源切断装置禁止对放电灯的电力供给,并且允许向 在接收到指示DC输入电压已经在该范围内返回的信号时,放电灯。
    • 6. 发明授权
    • Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
    • 固态成像装置,固态成像装置的制造方法以及电子装置
    • US08648436B2
    • 2014-02-11
    • US13039702
    • 2011-03-03
    • Atsushi Toda
    • Atsushi Toda
    • H01L31/00
    • H01L27/1463H01L27/14625H01L27/1464H01L27/14687H01L31/0322Y02E10/541Y02P70/521
    • A solid-state imaging device is provided with a pixel region in which a plurality of pixels including photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels, wherein the photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned, and the pixel isolation portion is formed from a compound semiconductor subjected to doping concentration control or composition control in such a way as to become a potential barrier between the photoelectric conversion films disposed in accordance with the plurality of pixels.
    • 固体摄像装置具备像素区域,其中排列有包括光电转换膜的多个像素,并且在多个像素之间插入像素隔离部分,其中光电转换膜是由...组成的黄铜矿结构化合物半导体 铜 - 镓 - 镓 - 铟 - 硫 - 硒基混合晶体或铜 - 铝 - 镓 - 铟 - 锌 - 硫 - 硒基混合晶体,并且以这样的方式设置在硅衬底上,以使晶格匹配 硅衬底,并且像素隔离部分由经过掺杂浓度控制或成分控制的化合物半导体形成,以便成为根据多个像素设置的光电转换膜之间的势垒。