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    • 2. 发明授权
    • Silver halide photographic light-sensitive material
    • 卤化银照相感光材料
    • US06416942B1
    • 2002-07-09
    • US09670271
    • 2000-09-27
    • Hiroki SasakiMasatoshi Nakanishi
    • Hiroki SasakiMasatoshi Nakanishi
    • G03C108
    • G03C1/835G03C1/005G03C1/832G03C7/3882
    • There is disclosed a silver halide photographic light-sensitive material which comprises a support and provided thereon at least one light-sensitive silver halide emulsion layer and at least one hydrophilic colloidal layer comprising a solid particle dispersion of a water-insoluble photographically useful compound, said solid particle dispersion being a dispersion comprising both a water-insoluble photographically useful compound of the formula 1 and a specific polymer having a carboxyl group and an alkoxycarbonyl group: wherein A is an acidic nucleus, L1, L2 and L3 each are a methine group which may be substituted, R1 and R3 each are a hydrogen atom or a substituent (including an atom), R2 is a substituent (including an atom), n is 0 or 1, m is an integer of 0 to 4, when m is an integer of 2 to 4, R2 may be the same or different, X is an electron-withdrawing group having Hammett's substitution constant &sgr;m of 0.3 to 1.5. The light-sensitive material is a photographic element that allows a water-insoluble photographically useful material to be stably introduced into photographic elements for various uses, that allows the material to quite stably exist in the photographic element, and that a surfactant having substantially no adverse effect is used therein.
    • 公开了一种卤化银照相感光材料,其包含支撑体并且设置有至少一个感光卤化银乳剂层和至少一个包含水不溶性照相有用化合物的固体颗粒分散体的亲水性胶体层, 固体颗粒分散体是包含水溶性摄影有用的式1化合物和具有羧基和烷氧基羰基的特定聚合物的分散体:其中A是酸性核,L1,L2和L3各自是次甲基, 可以被取代,R 1和R 3各自是氢原子或取代基(包括原子),R 2是取代基(包括原子),n是0或1,m是0-4的整数,当m是 2〜4的整数,R2可以相同也可以不同,X为具有0.3〜1.5的哈米特取代常数锡格匹曼的吸电子基团。 感光材料是照相材料,其允许将水不溶的照相有用材料稳定地引入用于各种用途的照相元件中,这使得材料相当稳定地存在于照相元件中,并且表面活性剂基本上不会有不利影响 其中使用效果。
    • 4. 发明授权
    • SRAM device having four tunneling transistors connected to a flip-flop
    • 具有连接到触发器的四个隧道晶体管的SRAM器件
    • US08872275B2
    • 2014-10-28
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L21/70G11C11/412H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。
    • 5. 发明申请
    • SRAM DEVICE
    • SRAM设备
    • US20120326239A1
    • 2012-12-27
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。