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    • 2. 发明授权
    • X-ray computer tomography apparatus
    • X射线计算机断层摄影装置
    • US07421059B2
    • 2008-09-02
    • US10510887
    • 2003-04-10
    • Masakazu SuzukiTakahiro YoshimuraMasanobu YoshidaMasanori OtsukaHideki Yoshikawa
    • Masakazu SuzukiTakahiro YoshimuraMasanobu YoshidaMasanori OtsukaHideki Yoshikawa
    • A61B6/14
    • A61B6/04A61B6/0421A61B6/14A61B6/548
    • An X-ray CT apparatus which executes a first X-ray tomography on a sectional plane having a desirable thickness in an object to be examined (0) with the object interposed between an X-ray generator (1) and a two-dimensional X-ray image sensor (2) provided so as to hold their mutual facing positional relation, and also executes a second X-ray tomography for obtaining a CT image of the interested area of the object (0). The first X-ray tomography is executed on the object (0) while the object (0) is held and fixed by an object holder (4) with the center of the orbit of the X-ray circulating radiation fixed, and while the object holder (4) is moved by an object mover (5) along the X-ray sectional image forming path according to the rotary angle of the X-ray circulating radiation.
    • 一种X射线CT装置,其在物体插入在X射线发生器(1)和二维X之间的对象物(0)中,在具有期望厚度的截面上执行第一X射线断层摄影 被设置为保持其相互面对的位置关系的射线图像传感器(2),并且还执行用于获得对象(0)的感兴趣区域的CT图像的第二X射线断层摄影。 当物体(0)被固定在X射线循环辐射轨道的中心的物体保持器(4)保持和固定时,在物体(0)上执行第一X射线层析成像, 根据X射线循环辐射的旋转角度,保持器(4)沿着X射线截面图像形成路径被物体移动器(5)移动。
    • 5. 发明授权
    • Nonvolatile semiconductor memory with pre-read means
    • 具有预读功能的非易失性半导体存储器
    • US5572463A
    • 1996-11-05
    • US416281
    • 1995-04-04
    • Takao AkaogiMasanobu YoshidaYasushige OgawaYasushi KasaShouichi Kawamura
    • Takao AkaogiMasanobu YoshidaYasushige OgawaYasushi KasaShouichi Kawamura
    • G11C16/26G11C16/30G11C29/04G11C7/00
    • G11C16/30G11C16/26G11C29/04G06F2201/81
    • A semiconductor memory having address buffer means, memory cell means, word line selection means, bit line selection means, an output buffer, first address generation means connected to the address buffer means, for providing and address for specifying a group of data pieces, and second address generation means for providing addresses for specifying the data pieces, respectively, the semiconductor memory comprising first reading means for selecting and reading a group of data pieces through one of the word line selection means and bit line selection means according to an address provided by the first address generation means, second reading means for selecting the data pieces, which have been selected and read according to the address provided by the first address generation means, through one of the bit line selection means and word line selection means according addresses provided by the second address generation means and providing them to the output buffer; and pre-reading means for reading another group of data pieces according the another address to be provided by the first address generation means while the preceding data pieces are being read according to the preceding address provided by the first address generation means and being selectively provided to the output buffer according to the addresses provided by the second address generation means.
    • 具有地址缓冲器装置,存储单元装置,字线选择装置,位线选择装置,输出缓冲器,连接到地址缓冲器装置的第一地址产生装置的半导体存储器,用于提供和寻址用于指定一组数据片段,以及 第二地址产生装置,分别提供用于指定数据片段的地址,所述半导体存储器包括第一读取装置,用于根据由字线选择装置和位线选择装置中的一个选择和读取一组数据片段, 第一地址产生装置,用于根据由第一地址产生装置提供的地址选择和读取的数据片段的第二地址产生装置,通过位线选择装置和字线选择装置之一,根据由 第二地址产生装置并将其提供给输出缓冲器; 以及预读取装置,用于根据由第一地址产生装置提供的另一地址读取另一组数据片段,同时根据由第一地址产生装置提供的先前地址读取先前的数据,并且选择性地提供给 所述输出缓冲器根据由所述第二地址产生装置提供的地址。