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1. 再颁专利

USRE35821E Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer 失效
标题翻译：图案形成方法包括在辐射敏感层上形成酸性涂层
公开(公告)号：USRE35821E
公开(公告)日：1998-06-09
申请号：US639973
申请日：1996-04-29
申请人： Hirokazu Niki , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Akitoshi Kumagae , Kazuo Sato , Masataka Miyamura , Yoshihito Kobayashi
发明人： Hirokazu Niki , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Akitoshi Kumagae , Kazuo Sato , Masataka Miyamura , Yoshihito Kobayashi
IPC分类号： G03F7/26 , G03F7/004 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/38 , H01L21/027 , G03C5/00
CPC分类号： G03F7/09 , G03F7/11 , G03F7/0045
摘要： A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.
摘要翻译：一种辐射敏感层，其包含作为主要成分的含有当暴露于化学辐射时能够产生酸的化合物的辐射敏感性组合物和具有至少一个可被酸分解的键的化合物。在辐射敏感层上形成酸性涂层。辐射敏感层和酸性涂层图案暴露于化学辐射。通过使用碱性水溶液来烘烤和显影辐射敏感层和酸性涂层，以获得每个具有预定宽度的线和间隔的图案。可以形成矩形截面形状的精细图案，而不会在膜表面上产生由表面抑制层形成的檐。

2. 发明授权

US5326675A Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer 失效
标题翻译：图案形成方法包括在辐射敏感层上形成酸性涂层
公开(公告)号：US5326675A
公开(公告)日：1994-07-05
申请号：US987821
申请日：1992-12-09
申请人： Hirokazu Niki , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Akitoshi Kumagae , Kazuo Sato , Masataka Miyamura , Yoshihito Kobayashi
发明人： Hirokazu Niki , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Akitoshi Kumagae , Kazuo Sato , Masataka Miyamura , Yoshihito Kobayashi
IPC分类号： G03F7/26 , G03F7/004 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/38 , H01L21/027 , G03C5/00
CPC分类号： G03F7/09 , G03F7/11 , G03F7/0045
摘要： A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.
摘要翻译：一种辐射敏感层，其包含作为主要成分的含有当暴露于化学辐射时能够产生酸的化合物的辐射敏感性组合物和具有至少一个可被酸分解的键的化合物。在辐射敏感层上形成酸性涂层。辐射敏感层和酸性涂层图案暴露于化学辐射。通过使用碱性水溶液来烘烤和显影辐射敏感层和酸性涂层，以获得每个具有预定宽度的线和间隔的图案。可以形成矩形截面形状的精细图案，而不会产生由在膜表面上产生的表面抑制层而引起的檐。

3. 发明授权

US5403695A Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups 失效
标题翻译：防止包含酸产生化合物和具有酸可分解基团的聚合物的形成图案
公开(公告)号：US5403695A
公开(公告)日：1995-04-04
申请号：US876457
申请日：1992-04-30
申请人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Naohiko Oyasato , Yoshihito Kobayashi , Shuzi Hayase
发明人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Naohiko Oyasato , Yoshihito Kobayashi , Shuzi Hayase
IPC分类号： G03F7/023 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0233 , G03F7/0392 , Y10S430/111 , Y10S430/146
摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.
摘要翻译：本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

4. 发明授权

US5658706A Resist composition for forming a pattern comprising a pyridinium compound as an additive 失效
标题翻译：用于形成包含吡啶化合物作为添加剂的图案的抗蚀剂组合物
公开(公告)号：US5658706A
公开(公告)日：1997-08-19
申请号：US302319
申请日：1994-09-08
申请人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
发明人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
IPC分类号： C08K5/16 , C08L25/00 , C08L25/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/111
摘要： A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
摘要翻译：用于形成图案的抗蚀剂组合物，其包含（a）由下式（1）表示的化合物并满足以下不等式，其中R 1是氢原子或甲基，R 2是一价有机基团基团，m为0或正整数，n为正整数，m和n满足0.03≤n/（m + n）≤1的条件，（b）能够产生酸的化合物当用光照射时，和（c）含氮化合物，其中重均分子量Mw和数均分子量Mn满足以下不等式：4,000

5. 发明授权

US5744281A Resist composition for forming a pattern and method of forming a pattern wherein the composition 4-phenylpyridine as an additive 失效
标题翻译：用于形成图案的抗蚀剂组合物和形成图案的方法，其中所述组合物包含4-苯基吡啶作为添加剂
公开(公告)号：US5744281A
公开(公告)日：1998-04-28
申请号：US848747
申请日：1997-05-01
申请人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
发明人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
摘要翻译：用于形成图案的抗蚀剂组合物，其包含（a）由下式（1）表示的化合物并满足以下不等式，其中R 1是氢原子或甲基，R 2是一价有机基团基团，m为0或正整数，n为正整数，m和n满足0.03≤n/（m + n）≤1的条件，（b）能够产生酸的化合物当用光照射时，和（c）4-苯基吡啶，其中重均分子量Mw和数均分子量Mn满足以下不等式：4,000

6. 发明授权

US5091282A Alkali soluble phenol polymer photosensitive composition 失效
标题翻译： ALKALI可溶性酚醛聚合物感光性组合物
公开(公告)号：US5091282A
公开(公告)日：1992-02-25
申请号：US504300
申请日：1990-04-03
申请人： Yasunobu Onishi , Hirokazu Niki , Yoshihito Kobayashi , Rumiko Hayase , Toru Ushirogouchi
发明人： Yasunobu Onishi , Hirokazu Niki , Yoshihito Kobayashi , Rumiko Hayase , Toru Ushirogouchi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/075
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/038 , G03F7/0755 , G03F7/0758 , Y10S430/124 , Y10S430/125
摘要： This invention includes a photosensitive composition containing an alkali-soluble resin and a compound represented by formula (I), (II) or (III) described in the claims and the specification, a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (IV) described in the claims and the specification and a basic compound, and a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (VI) described in the claims and the specification and a compound which produces an acid upon radiation of light. A pattern formation method using these photosensitive compositions includes the steps of dissolving any one of the above photosensitive compositions in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, and developing the exposed resin layer with an aqueous alkaline solution. When the first or second photosensitive composition is used, a good pattern can also be formed by a method including the steps of dissolving either the first or second photosensitive composition in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, heating the pattern-exposed resin layer, exposing the entire surface of the heated resin layer, and developing the entirely exposed resin layer with an aqueous alkaline solution.

7. 发明授权

US5580702A Method for forming resist patterns 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US5580702A
公开(公告)日：1996-12-03
申请号：US357179
申请日：1994-12-13
申请人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Noahiko Oyasato , Yoshihito Kobayashi , Shuzi Nayase
发明人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Noahiko Oyasato , Yoshihito Kobayashi , Shuzi Nayase
IPC分类号： G03F7/023 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0233 , G03F7/0392 , Y10S430/111 , Y10S430/146
摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.
摘要翻译：本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

8. 发明授权

US5100768A Photosensitive composition 失效
公开(公告)号：US5100768A
公开(公告)日：1992-03-31
申请号：US519397
申请日：1990-05-04
申请人： Hirokazu Niki , Yasunobu Onishi , Yoshihito Kobayashi , Rumiko Hayase
发明人： Hirokazu Niki , Yasunobu Onishi , Yoshihito Kobayashi , Rumiko Hayase
IPC分类号： G03F7/004
CPC分类号： G03F7/0045
摘要： A photosensitive composition contains an alkali-soluble polymer having a phenol skeleton in its structure and a heterocyclic compound represented by formula (I-1) or (I-2), formula (II-1) or (II-2), any of formulas (III-1) to (III-8), any of formulas (IV-1) to (IV-12), or any of formulas (V-1) to (V-4) described in the claims and specification. A photosensitive composition containing a heterocyclic compound represented by formula (I-1) or (I-2), any of formulas (III-1) to (III-8), any of formulas (IV-1) to (IV-12), or any of formulas (V-1) to (V-4) can be suitably used as a negative resist. A photosensitive composition containing a heterocyclic compound represented by formula (II-1) or (II-2) can be suitably used as a positive resist. A photosensitive composition containing an alkali-soluble polymer having a phenol skeleton in its structure and a polymer having a nitrogen-containing heterocyclic compound as a polymeric unit is also included in this invention. The latter photosensitive composition can further contain a heterocyclic compound represented by any of formulas (VI-1) to (VI-15) described in the claims and specification.

9. 发明授权

US5279921A Pattern formation resist and pattern formation method 失效
标题翻译：图案形成抗蚀剂和图案形成方法
公开(公告)号：US5279921A
公开(公告)日：1994-01-18
申请号：US799320
申请日：1991-11-27
申请人： Yasunobu Onishi , Yoshihito Kobayashi , Hirokazu Niki
发明人： Yasunobu Onishi , Yoshihito Kobayashi , Hirokazu Niki
IPC分类号： C08K5/41 , C08K5/42 , C08L101/00 , G03F7/004 , G03F7/039 , G03F7/075 , H01L21/027 , G03C1/73
CPC分类号： G03F7/0045 , Y10S430/122 , Y10S430/124
摘要： Disclosed is a pattern formation resist which can be exposed with deep UV, has a high dry etching resistance, has a large allowance in a development manipulation using an aqueous alkali solution, and can form a fine pattern having a good sectional shape. The resist comprises an alkali-soluble polymer and a compound represented by the following formula (I) and simultaneously containing, in a single molecule, a substituent which decomposes with an acid and a group which produces an acid with deep UV: ##STR1## wherein the substituent which decomposes with an acid is present in at least one of R.sub.1 to R.sub.4, and when R.sub.1 to R.sub.4 have a group except for the substituent which decomposes with an acid, R.sub.1 represents a nonsubstituted or substituted aliphatic hydrocarbon group, each of R.sub.2 and R.sub.3 independently represents a hydrogen atom or a non-substituted or substituted aliphatic hydrocarbon group, and R.sub.4 represents a nonsubstituted or substituted aliphatic hydrocarbon group.
摘要翻译：公开了一种图案形成抗蚀剂，其可以用深紫外线曝光，具有高的耐干蚀刻性，在使用碱性水溶液的显影操作中具有大的余量，并且可以形成具有良好截面形状的精细图案。抗蚀剂包含碱溶性聚合物和由下式（I）表示的化合物，并且在单分子中同时含有与酸分解的取代基和产生具有深UV的酸的基团：（*化学结构 *）（I）其中与酸分解的取代基存在于R 1至R 4中的至少一个中，并且当R 1至R 4具有除了与酸分解的取代基之外的基团时，R 1表示非取代或取代的脂族烃基团，R2和R3各自独立地表示氢原子或未取代或取代的脂族烃基，R4表示非取代或取代的脂族烃基。

10. 发明授权

US06703181B1 Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same 失效
标题翻译：具有均匀的组分浓度分布的光敏组合物和使用其的图案形成方法
公开(公告)号：US06703181B1
公开(公告)日：2004-03-09
申请号：US08709879
申请日：1996-09-09
申请人： Takao Hayashi , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Masataka Miyamura
发明人： Takao Hayashi , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Masataka Miyamura
IPC分类号： G03C176
CPC分类号： C08K5/3472 , C08K5/13 , C08K5/175 , G03F7/0045 , G03F7/039
摘要： There is provided a photosensitive composition suitable for a resist material. This photosensitive composition has a high sensitivity and a high resolution with respect to a light source having a short wavelength, does not cause a phase separation in a film state, and makes it possible to stably form fine resist patterns. The photosensitive composition contains a polymer obtained by protecting an alkali-soluble group of an alkali-soluble polymer by a group which is unstable with respect to an acid, a compound which generates an acid upon being irradiated with light, at least one compound which is selected from the group consisting of an imidazole compound, an alanine compound, an adenine compound, an adenosine compound, and a quaternary ammonium salt compound, and which increases miscibility in a resist film, and a phenol compound.
摘要翻译：提供了适用于抗蚀剂材料的光敏组合物。这种光敏组合物相对于具有短波长的光源具有高灵敏度和高分辨率，不会在膜状态下引起相分离，并且使得可以稳定地形成精细的抗蚀剂图案。感光性组合物含有通过相对于酸不稳定的基团，被光照射时产生酸的化合物保护碱溶性聚合物而获得的聚合物，至少一种化合物是选自咪唑化合物，丙氨酸化合物，腺嘌呤化合物，腺苷化合物和季铵盐化合物，并且增加抗蚀剂膜和酚化合物的混溶性。

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